TRANSISTOR - Introduction
BIPOLAR JUNCTION TRANSISTOR (BJT)
Introduction
Beside diodes, the most popular semiconductor devices is
transistors. Eg: Bipolar Junction Transistor (BJT) Transistors are more complex and can be used in many ways Most important feature: can amplify signals and as switch Amplification can make weak signal strong (make sounds louder and signal levels greater), in general, provide function called Gain
Transistor Structure
BJT is bipolar because both holes (+) and electrons (-) will take part in the
current flow through the device N-type regions contains free electrons (negative carriers) P-type regions contains free holes (positive carriers) 2 types of BJT NPN transistor PNP transistor The transistor regions are: Emitter (E) send the carriers into the base region and then on to the collector Base (B) acts as control region. It can allow none,some or many carriers to flow Collector (C) collects the carriers
PNP and NPN transistor structure
P
N
N
P
Ic(mA) IB(A) IE(mA) IB(A)
IC(mA)
IE(mA)
Arrow shows the current flows
NPN Transistor Structure
The collector is lightly doped.
N
C B
The base is thin and is lightly doped.
The emitter is heavily doped.
Transistor configuration
Transistor configuration is a connection of transistor to get variety
operation. 3 types of configuration: Common Collector. Common Base. Common Emitter
Common-Collector Configuration
The input signal is applied to the base terminal and the output is
taken from the emitter terminal. Collector terminal is common to the input and output of the circuit Input BC Output EC Input = Output
Common-Base Configuration
Base terminal is a common point for input and output. Input EB Output CB Not applicable as an amplifier because the relation between input current gain (IE) and output current gain (IC) is approximately 1
Common-Emitter Configuration
Emitter terminal is common for input and output circuit Input BE Output CE Mostly applied in practical amplifier circuits, since it provides good voltage, current and power gain
NPN Transistor Bias
No current flows.
N
C B
The C-B junction is reverse biased.
NPN Transistor Bias
N
C B
The B-E junction is forward biased.
Current flows.
NPN Transistor Bias
IC Current flows everywhere.
N
C B
When both junctions are biased.... Note that IB is smaller than IE or IC.
IB
N
IE
Note: when the switch opens, all currents go to zero.
Although IB is smaller it controls IE and IC.
IC
N
C B
IB Gain is something small controlling something large (IB is small).
N
IE
IC = 99 mA
The current gain from base to collector is called b.
C
P
IB = 1 mA
99 mA IC I 1BmA
b =
= 99
IE = 100 mA
IC = 99 mA
Kirchhoffs current law:
C
P
IB = 1 mA
IE = I B + I C
= 1 mA + 99 mA
= 100 mA IE = 100 mA
IC = 99 mA
In a PNP transistor, holes flow from emitter to collector.
C B
IB = 1 mA Notice the PNP bias voltages.
IE = 100 mA
NPN Schematic Symbol
Collector
Base
C B E
Emitter
Memory aid: NPN means Not Pointing iN.
PNP Schematic Symbol
Collector
Base
C B E
Emitter
Recall: NPN and PNP Bias
Fundamental operation of pnp transistor and npn transistor is similar except for:
role of electron and hole, voltage bias polarity, and Current direction
I-V Characteristic for CE configuration : Input characteristic
Input characteristic: input
current (IB) against input voltage (VBE) for several output voltage (VCE) From the graph
The transistor turned on when
VBE = 0.7V
IB = 0 A VBE < 0.7V (Si) IB = value VBE > 0.7V (Si)
I-V Characteristic for CE configuration : Output characteristic
Output characteristic: output
current (IC) against output voltage (VCE) for several input current (IB) 3 operating regions:
Saturation region Cut-off region Active region
I-V Characteristic for CE configuration : Output characteristic
Saturation region in which both junctions are forward-biased and IC
increase linearly with VCE
Cut-off region where both junctions are reverse-biased, the IB is very
small, and essentially no IC flows, IC is essentially zero with increasing VCE the BE junction is forward-biased and BC junction is reverse-biased. IC increases drastically although only small changes of IB. switch
Active region in which the transistor can act as a linear amplifier, where
Saturation and cut-off regions areas where the transistor can operate as a Active region area where transistor operates as an amplifier
Current Relationships
Relations between IC and IE :
= IC IE Value of usually 0.9998 to 0.9999, 1 Relations between IC and IB : = IC @ IC = IB IB Value of usually in range of 50 400 The equation, IE =IC + IB can also written in IC = IB IE = IB + IB => IE = ( + 1)IB The current gain factor , and is: = @ = . +1 -1
