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Course Code: EE 611 Department: Electrical Engineering Instructor Name: Jayanta Mukherjee Email: Jayanta@ee - Iitb.ac - in

This document is a lecture from IIT Bombay's EE 611 course, focusing on resonators and their properties. It covers circuit resonators, including series and parallel models, quality factors, and bandwidth definitions. The lecture also discusses transmission line resonators and their behavior in electrical engineering contexts.

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0% found this document useful (0 votes)
27 views22 pages

Course Code: EE 611 Department: Electrical Engineering Instructor Name: Jayanta Mukherjee Email: Jayanta@ee - Iitb.ac - in

This document is a lecture from IIT Bombay's EE 611 course, focusing on resonators and their properties. It covers circuit resonators, including series and parallel models, quality factors, and bandwidth definitions. The lecture also discusses transmission line resonators and their behavior in electrical engineering contexts.

Uploaded by

anu91
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
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Page 1

IIT Bombay

Course Code : EE 611

Department: Electrical Engineering

Instructor Name: Jayanta Mukherjee

Email: [email protected]

Lecture 12

EE 611 Lecture 12 Jayanta Mukherjee


Page 2
IIT Bombay
Topics Covered

• Resonators

• Capacitively coupled resonators

EE 611 Lecture 12
10 Jayanta
Jayanta Mukherjee
Mukherjee
IIT Bombay Page 3

Review of Circuit Resonators


• In EM field theory sense resonance implies that a device
has the ability to store large and equal amounts of Electrical
and magnetic energy with only a small loss

• Because the behavior is in a narrow bandwidth it is appropriate


to have a circuit analog of such devices. Circuit models are
applicable only for narrow bandwidth

• Two models of resonance are present – series and parallel

• Series = Low impedance, Parallel = High Impedance

• At resonance energy stored in capacitor balances that stored in


inductor. Energy loss is due to resistor

EE 611 Lecture 12
10 Jayanta
Jayanta Mukherjee
Mukherjee
IIT Bombay Page 4

Series RLC Resonator


 A series RLC circuit including a generator is given by
 Defining R T  R  R G the impedance to the source is then
ZT
 1  RG R L
Z T  RT  j  L  
 C 
VG C

 The resonant frequency occurs when the inductive and capacitive reactances
1
cancel.Solving we find r  . At r , the impedance is purely real and
LC
Z T  R T R T is small in high quality series resonators.
 We can simplify the impedance as :
j r L  1    r 
Z T R T   L    RT  jr L  
r L  C   r  
EE 611 Lecture 12
10 Jayanta
Jayanta Mukherjee
Mukherjee
IIT Bombay Page 5

Loaded and Unloaded Q definition


 The following quality factors are defined ZT

r L RG R L

QU  the " unloaded quality factor"


R
VG C
r L
QE  the " external quality factor"
RG
ωr L
QL  the " unloaded quality factor"
R  RG
where r 1/ LC is the resonant frequency of the series resonator
 From these definitions it follows that
1 1 1
 
QL QU QE
EE 611 Lecture 12
10 Jayanta
Jayanta Mukherjee
Mukherjee
IIT Bombay Page 6

Series RLC Resonator


 Using the loaded quality factor Q L r L/R T we can write ZT as :
  r     r  
ZT R T  jr L   Z T RT  1  jQL    
 
 r      r   
 r ZT

 Introducing  f   , we have RG R L

r 
ZT R T 1  jQL f   f  1 for   r VG C

 So for slight deviation f r  f we have :


1
f f r  f   f   f   f 
 f  -  1     1    1     1  
fr f  f   f   f   f 
2f 2
f  
fr r
EE 611 Lecture 12
10 Jayanta
Jayanta Mukherjee
Mukherjee
IIT Bombay Page 7

3 dB Bandwidth
ZT
 The power dissipated in the entire circuit is RG R L

2
1 2  1  R G VG
Pdiss  VG Re  
 
VG C
2 2
2 Z
 T 2 1  Q Lε f
using Z T  R T 1  jQ L  f 
 The power dissipated will be maximum at resonance
 r for which  f 0 
 As the frequency deviates from resonance, we will obtain one
half the power dissipated when Z T  R T 1  j which occurs when
1 ωr fr
Q L ε f  1  Q L    Δ  1
ε f 2ω BW3 dB
 Thus the loaded quality factor Q L is seen to be equal to the inverse
of the fractional 3 dB bandwidth 
EE 611 Lecture 12
10 Jayanta
Jayanta Mukherjee
Mukherjee
IIT Bombay Page 8

3 dB Bandwidth(2)
 If we define f1 and f 2 as the two frequencies at which the power
dissipated drops by 3 dB then the fractional bandwidth is :
BW3 dB f 2  f1
Δ 
fr fr
 Setting - Q L ε f1 Q L ε f2 we can easily verify that f r  f1f 2
 It results further that Z T  R T 1  jQ L  f   RT 1  j  for
1   1 for f f1
Q L   f   f 
   1 for f f 2

EE 611 Lecture 12
10 Jayanta
Jayanta Mukherjee
Mukherjee
IIT Bombay Page 9

More General definition of Q factor


 A more general definition of the quality factor for any resonator is :
Energy stored in Resonant circuit
Q U r
Power Loss in the Resonant circuit r

Energy stored in Resonant circuit


Q E r
Power Loss in the External circuit r

Energy stored in Resonant circuit


Q L r
Total Power Loss r

These quantities are determined from the complex power :


1
PC  VI*  PL  2jωWm  We  where Wm and We are
2
respectively the magnetic and electric energy stored in the resonator
1 2 1 2
Wm  
4 e
 H dv and We  
4 e
 E dv

 Internal and external losses PL are selected as appropriate for loaded, internal
or external Q' s
EE 611 Lecture 12
10 Jayanta
Jayanta Mukherjee
Mukherjee
IIT Bombay Page 10

Application of the general formula


RG R L
+ V -
 For the series resonator we have, R IL
+
VC C
1 2 1 2 1 2
VG
We  C VC , Wm  L I L and PL  R VR -
4 4 2
with VC the voltage across the capacitor, I L the current across the inductor,
and VR the voltage across the resistor.
 Since at resonance Wm We and VR /VC RjC
Energy stored in Resonant Circuit We  Wm
Q U ω r ω r
Power Loss in the Resonant Circuit ωr PL ωr

1 2
2  C VC 2
4 VC 1 ωr L
 ω r RC  
1 2 VR ω r CR R
R VR
2
EE 611 Lecture 12
10 Jayanta
Jayanta Mukherjee
Mukherjee
IIT Bombay Page 11

Another definition of Q
 For more complex circuits the following definition comes handy
 r
Starting with Z T R T 1  jQ L ε f  R T  jX with  f  
r 
d f 2 dX d RT QL f  2QL RT
 Using  we can find  
d r r d r d r
r
where we assumed that R T is weakly frequency dependent around r
 It results that :
1 ω r dX 1 ω r dX 1 ω r dX
QU  QE  and Q L 
2 R dω ωωr 2 R G dω ωωr 2 R T dω ωωr

EE 611 Lecture 12
10 Jayanta
Jayanta Mukherjee
Mukherjee
IIT Bombay Page 12

Shunt RLC Resonator


YT

IG GG G C
L

 Defining G T G  G G the admittance to the source is then


 1 
YT G T  j C - 
 L 
 The resonant frequency occurs when the inductive and capacitive susceptances
1
cancel. Solving we find r  . At r , the admittance is purely real and
LC
YT G T
 We can simplify the admittance as :
YT G T 1  jQ L  f 
EE 611 Lecture 12
10 Jayanta
Jayanta Mukherjee
Mukherjee
IIT Bombay Page 13

Loaded and Unloaded Q definition


 We define the following quality factors :
C
QU  r the " unloaded quality factor"
G
r C
QE  the " external quality factor"
GG
r C
QE  the " loaded quality factor"
G  GG
where r 1/ LC is the resonant frequency of the shunt resonator
 Expressing YT G T  jB we can define the Q in terms of the susceptance B :
1 ω r dB 1 ω r dB 1 ω r dB
QU  QE  QL 
2 G dω ω ω r 2 G G dω ω ω r 2 G T dω ω ω r
 Large Q values indicate a device which can store large amounts of energy
with only slight dissipation : higher " quality"resonators
EE 611 Lecture 12
10 Jayanta
Jayanta Mukherjee
Mukherjee
IIT Bombay Page 14

Transmission Line Resonators


 A shorted (or open) transmission line shows a resonant behavior at n0 :
   r vp 
Zin  jZ 0 tan  l  jZ 0 tan   using l   and  
 2 0  4 4 0 vp
 For a lossless shorted line we have Zin  jZ 0 tan  l and we have a series
resonancefor   n (l  n/2 or  2n  10 ) and shunt resonance
for  n  1/2 l n  1/2 / 2 or   2n0 
Im[Zin(ω)]

open

Inductive
Open

λ/4 λ/2 3λ/4 λ


Z0 Short l
l 2ω0
ω0 3ω0
ω
4ω0
Z0 short
Capacitive

π/2 3π/2 θ
π 2π

EE 611 Lecture 12
10 Jayanta
Jayanta Mukherjee
Mukherjee
IIT Bombay Page 15

Physical Transmission Line Resonator


 A completely lossless line would have infinite unloaded Q. Since design has
to be realistic, small line losses are included
 Input impedance of a lossy line of length l is given by :
Z L  Z 0 tanh γt
Z in  Z 0
Z 0  Z L tanh γa
where Z 0 can be complex and    j is the complex propagation
constant on the line
 A line which is short circuited (Z L 0) will have
tanh αl  jtan βl 
Z in  Z 0 tanh α  jβ l  Z 0
1  jtanh αl  tan βl 

EE 611 Lecture 12
10 Jayanta
Jayanta Mukherjee
Mukherjee
IIT Bombay Page 16

Shorted Line Resonator


 Since we expect the loss will be small, we can use tanh(l) l to get
tanh αl  jtan βl  αl  jtan βl 
Zin  Z 0 Z0
1  jtanh αl tan βl  1  jl tan βl 
Zin Z 0 αl  j Z0 tan βl   R  jX
when αl tan βl   1
 We have series resonance when  r l  n. (i.e. the line is a multiple of a
half wavelength long). The equivalent resonator resistance is : R  Z 0 l
RG RG

Z0 β α R
Short X

l
EE 611 Lecture 12
10 Jayanta
Jayanta Mukherjee
Mukherjee
IIT Bombay Page 17

Q of Shorted Line
 Consider the case of series resonance ( r l  n) for a shorted line. We can
find Q U using
1 r dX 1  r dX
QU   using  /v p
2 R d r 2 R d r

 Since Z in  R  jX  Z 0  l  j Z 0 tan(l) and tan βl  β  β r l around


the resonance, we can evaluate the unloaded Q to be :
1  r d Z 0 tan l  r 
QU   
2 Z 0 l d  
2  r 
r

 Large values of Q U are possible for transmission lines because near


lossless lines are practical. For  0.005 Np/m and f r  2 GHz,  r 0.15 m
we have Q U  4000
 Q U can be increases by decreasing the loss factor .
EE 611 Lecture 12
10 Jayanta
Jayanta Mukherjee
Mukherjee
IIT Bombay Page 18

Open Line Resonator


 An open transmission line shows a resonant behavior at n0 :
 ω  λr vp 
Yin  jY0 tan l  jY0 tan   using l   and  
 2 ω0  4ω 0 4ω 0 vp
 For a lossless open line we have Yin  jY0 tan l and we have a shunt
resonance for   n (l  n/2 or  2n  1 0 ).
Im[Yin(ω)]
Open
Open Line short

Inductive
Z0 λ/4 λ/2 3λ/4 λ
l
2ω0
l ω0 3ω0
ω
4ω0
open
Capacitive

π/2 3π/2 θ
π 2π
1
EE 611 Lecture 12
10 Jayanta
Jayanta Mukherjee
Mukherjee
IIT Bombay Page 19

Open Line Resonator


Open
Open Line
Z0 Z0 β α
Open
l GG GG G B

1
l
 The open line resonator admits its shunt resonance at   n(or l /2)
 The admittance of an open resonator including loss is :
Y  Y0 tanhαl  jl  Y0 αl  jY0 tan βl G  jB
 The unloaded Q is the same as for the shorted line resonator
1 r dB  
QU   
2 G d r 2  r 
n Y0
 The loaded Q will also be small : Q L Q E 
2 GG
EE 611 Lecture 12
10 Jayanta
Jayanta Mukherjee
Mukherjee
IIT Bombay Page 20

Capacitively coupled open line


Resonators Open Circuit
Feed Line Gap Resonator
Z0 Z1

l
C

Z0 Z1 Open

 An effective way to couple a source to a microstrip is by simply leaving a


" gap" between the feed and resonator
 For the combined resonator plus capacitance circuit, we obtain resonance
when
1
X in -  Z1cot β r l 0 Note Zin  jX in
ωr C
 A lossless formula is used
EE 611 Lecture 12
10 Jayanta
Jayanta Mukherjee
Mukherjee
IIT Bombay Page 21

Capacitively coupled open line


Resonators
 The resonance of this device will be series because a low input impedance will
be obtained. We are " inverting" the resonance from series to parallel by adding
the capacitor.
 If we plot 1/C and - Z1cot βl  Z1 cot ωl/v p , the point of intersection is
the new resonant frequency. The resonant frequency is lowered by the
Im[Zin(ω)]
capacitor. Open 1/ωC

Z1
3λ/4
λ/4 λ/2 λ
l
l
ω
4ω0

Z0 θ
π/2 3π/2 2π

1
EE 611 Lecture 12
10 Jayanta
Jayanta Mukherjee
Mukherjee
IIT Bombay Page 22

External Q of Capacitively coupled open


line Resonators
 This resonator will have a fairly high external Q because its reactance X in
is varying rapidly with frequency.
ω r dX in ωr d  1 
QE     Z1cot ωd/v p 
2Z0 dω ω ω r 2Z0 dω  ωC  ω ω r
d
 Since cotx   cosec2 x, we can work out that
dx
Z1  X cr 
 X 2 
cr  1
QE    β r l 1  2  where X cr 
2Z0  Z1  Z  r C
 1 
 For a high Q U resonator, Q L Q E so this equation defines the loaded
Q performance. Theoretically we can have Q L approaching Q U (high value)
by reducing C
EE 611 Lecture 12
10 Jayanta
Jayanta Mukherjee
Mukherjee

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