ELE 307 MODULE 1

BIPOLAR JUNCTION TRANSISTOR CONFIGURATIONS

Common-Base (CB) Configuration

𝑉𝐸
𝐵
 This configuration derives its name from the fact that the base is common
to both the input (emitter) and output side of the configuration.

There are two sets of characteristics necessary to represent its behavior.

These are the input (or emitter) characteristics and the output (or collector)
characteristics.

The input characteristics arise from a plot of emitter current, 𝐼𝐸 versus

emitter-to base voltage, 𝑉𝐸𝐵 with the collector-to-base voltage, 𝑉𝐶𝐵 as a

current, 𝐼𝐶 versus 𝑉𝐶𝐵 with 𝐼𝐸 as a parameter.

parameter. The output characteristics arise from a plot of the collector

An increase in 𝑉𝐶𝐵 will by Early Effect cause 𝐼𝐸 to increase with 𝑉𝐸𝐵 held
The input characteristics are similar to the forward characteristics of a diode.

constant. This gives rise to a set of curves as shown in Figure below

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𝑉 𝐸𝐵

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There are three regions of operation in the output characteristics as
illustrated.
In the first region called the active region, the collector junction is
reverse-biased while the emitter is forward-biased.
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minimum distortion. In this region, 𝐼𝐸 ≥ 0 and 𝑉𝐸𝐵 ≥ 𝑉𝛾 .

This is the only region employed for amplification of signals with

Consider first that 𝐼𝐸 = 0, then 𝐼𝐶 is small and equals the reverse

saturation current of the collector junction, 𝐼𝐶𝑂. Suppose now that 𝐼𝐸 is
caused to flow, 𝐼𝐶 then becomes
𝐼𝐶 =𝛼𝐼𝐸 + 𝐼𝐶𝑂.
In this region 𝐼𝐶 is essentially independent of 𝑉𝐶𝐵 and dependent only
(1)

on 𝐼𝐸 . However, there is actually a small increase in |𝐼𝐶 | with |𝑉𝐶𝐵 |.

Since 𝛼 is close to but less than 1, the value of is slightly less than , i.e the
current gain is less than unity
reverse-biased(𝐼𝐸 < 0). The region below 𝐼𝐸 = 0 characteristic is
In the cut-off region, the collector and the emitter junctions are both

referred to as the cut-off region.

forward-biased resulting in the exponential change in 𝐼𝐶 with small

In the saturation region, both the collector and emitter junctions are

change in 𝑉𝐶𝐵 . 𝐼𝐶 may even become positive if the forward bias is

sufficiently large.

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 Common-Emitter (CE) Configuration
In this configuration illustrated, the emitter is common to both the
base and the collector. It is also called Grounded –Emitter
configuration. This is the most frequently encountered transistor
configuration.

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𝐼𝐵 is plotted against 𝑉𝐵𝐸 with 𝑉𝐶𝐸 as a parameter.
The input characteristics shown below resembles that of a CB though

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 The output characteristics shown in Figure below consist of three
regions.

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 In the active region of operation, the collector is reversed-biased
while the base junction is forward-biased. The active region of the
common-emitter configuration can be employed for voltage, current
and power amplifications.

Applying Kirchhoff’s current law (KCL) to the circuit in Figure above,

we have:
𝐼𝐵 = 𝐼𝐸 − 𝐼𝐶
(2)
It has been stated earlier on for a common-base configuration that:

Combining Eqns. 1 and 2, we have

(3)
where .
Equation 3 can also be written as
(4)
where

𝑰 𝑪𝑬𝑶 = ( 𝜷 +𝟏 ) 𝑰 𝑪𝑶

Since in the active region, is commonly called the common-emitter forward

current amplification factor. Typical values vary from 20 to 600.
The cut off region for the CE configuration is not as well-defined as for the CB.
At cut-off, then . .
is the actual collector current with the collector junction reverse-biased and
base open-circuited. It is not just enough to reduce to zero in order to cut-off the
transistor. Instead, it is necessary to reverse-bias the emitter junction slightly. So,
cut-off is properly defined as a condition when and.

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In the saturation region, the collector and the emitter junctions are
forward-biased. The collector-emitter voltage at saturation is denoted
by . and no longer respond appreciably to changes in .
Since is usually very small (almost zero), is nominally. The minimum
base current to achieve saturation is given by .

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Example 1
Determine the region of operation of the transistor in the circuit

β=100 and ICO=2×10-5 mA is under consideration. Hence,

shown in the Figure below given that a silicon transistor with

determine the currents in the circuit,

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Solution:
Since the transistor is an npn transistor, the emitter-base junction is
forward-biased. This shows that the transistor is not in the cut-off region.
Let us assume it is in the active region. Applying Kirchhoff’s voltage law
(KVL) to the input circuit gives:

For silicon transistor,

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 To verify our assumption, we apply KVL to the collector circuit:

Since is positive and the transistor is an npn type, the collector

junction is reverse-biased and so the transistor is in the active
region as assumed.

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 Example 2
(a)The circuit in Example 1.1 is modified by changing the base resistor
from 200kΩ to 50kΩ. If β=100, determine whether or not the
transistor is in saturation. (Take).
(b)Repeat part (a) with 2kΩ-emitter resistor added.
Solution:
(a)Assuming the transistor is saturation, applying KVL to the input circuit
yields:

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Applying KVL to the collector circuit,

The minimum base current required for saturation is

Since , the transistor is in saturation.

(b)Assuming the transistor is in saturation, applying KVL to the input
circuit yields:
(1)
Applying KVL to the collector circuit gives:
(2)

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Solving the two equations simultaneously yields:

Since , the transistor is not in the saturation region but in the active
region.
To analyse the circuit in the active region, we apply KVL to the input
circuit giving:

But,

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 To confirm that it is actually in the active region, we apply KVL to the
collector circuit:

A silicon transistor with VBEsat=0.8V, β=100 and VCEsat=0.2V is used

Example 3

in the circuit shown in the Figure below. Find the minimum value of RC for
which the transistor remains in saturation.

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Solution:
Applying KVL to the base circuit yields:

For saturation, the minimum collector current is given by:

Applying KVL to the collector circuit gives:

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Common Collector (CC) Configuration
The common collector configuration is used primarily for impedance
matching purposes since it has high input impedance and low output
impedance.

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The common collector circuit (also called emitter follower) using npn
transistor is shown in the Figure above with the load resistor from
emitter to ground. Note that the collector is tied to ground even though
the transistor is connected in a manner similar to the common emitter
configuration.

For all practical purposes, the output characteristics of the CC are the
same as for the CE configuration.
For the CC configuration, the output characteristics are plots of versus
with as a parameter.
The horizontal voltage axis for the CC is obtained by changing the sign of
i.e.. Since, is replaced with.
The input characteristics can also be obtained from CE characteristics by
performing proper mathematical manipulations.

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 BJT Maximum Ratings
For each transistor, there is a region of operation on the characteristics
that will ensure that the maximum ratings are not being exceeded and
the output signal exhibits minimum distortion. The standard transistor
data sheet will include at least three maximum ratings: These are:
Maximum collector power dissipation, expressed in mW
Maximum collector voltage, expressed in V
Maximum collector current, expressed in mA.
The power or dissipation rating is the product of collector voltage and
current. For CE configuration,

The non-linear curve (maximum power curve) determined by this

equation is illustrated on the characteristics.
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As seen from the characteristics, the limit of operation of the transistor
is defined by:

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