DEC50143 –CMOS INTEGRATED CIRCUIT

DESIGN & FABRICATION

CHAPTER 1: INTRODUCTION TO
INTEGRATED CIRCUIT
1.1.1 Definition of electronics, microelectronics & integrated circuit:
a. Electronics

 Electronics refers to the branch of physics that studies the

dynamic behavior of electron and other electrical carriers in
vacuum, gas and semiconductor.

b. Microelectronics

 Microelectronics is a branch of electronics that focuses on

the production of electronic components, either individually
or a complete circuit on a small scale (miniaturization).
This field study on the design of integrated circuits (ICs), IC
production and manufacturing to reduce cost, size and
circuits capacity.
c. Integrated circuit

 a complex set of tiny components and their

interconnections that are imprinted onto a tiny slice of
semiconductor material (e.g silicon). Integrated circuits are
usually called ICs or chips.
Most electronic equipment today use integrated circuit, for
example:
 Computer / Server / workstation
 TV / Radio / Video
 Cell Phones
 Digital Clock
 Robotic Systems
 Telecommunication System
 Automotive
 Medical Equipment
 Aerospace
 Children's Toys
 Military Field
 Missile System
 etc.
 Integrated Circuit Discrete Components
SIZE Small Larger
COST Lower High
POWER CONSUMPTION Lower High
RELIABILITY High Low
REPLACEMENT Easy Difficult
SPEED Faster Slower
 Gold wire Chip Capsule

Mounting pad Chip seal Metal frame

Cross section of IC in dual- in line packages

(DIP)
Functions of integrated circuit packages:

i. Provides signal and power distribution.

ii. Provides mechanical support.

iii. Provides protection from the environment.

 Two types of Integrated Circuit packaging
materials :

◦ Ceramic

◦ Plastics
IC packaging technology:

i. Through-hole Technology (THT)

ii. Surface Mount Technology (SMT)
Through-hole Technology (THT)

 through-hole technology, also spelled "thru-hole", refers to the

mounting scheme used for electronic components

 its involves the use of leads on the components that are inserted
into holes drilled in printed circuit board (PCB)

 soldered to pads on the opposite side either by manual assembly

by hand placement or by the use of automated insertion mount
machines.
Types of Through-hole IC:

a. Single in-line package (SIP)

b. Dual in-line package (DIP)

PDIP
CERDIP
c. Pin Grid Array (PGA)

Bottom view Top view

Surface Mount Technology (SMT)

 Surface mount technology (SMT) is a method for constructing

electronic circuits in which the components are mounted directly onto
the surface of printed circuit boards (PCBs).

 SMT component is usually smaller than its through-hole

counterpart because it has either smaller leads or no leads at all. It
may have short pins or leads of various styles, flat contacts, a matrix
of solder balls or terminations on the body of the component.
 Types of Surface mount IC:

a. Dual in-line package (DIP)

SOIC SSOP TSOP

Small Outline Integrated Circuit Shrink Small Outline Package Thin Small Outline Package
b. Quad in-line package

PLCC PQFP
Plastic Leaded Chip Carrier Plastic Quad Flat Pack

QFN LCC
Quad Flat No Leads Package Leadless Chip Carrier
c. Ball Grid Array (BGA)

BGA Bottom View

BGA Cross Section
 The RoHS 1 directive took effect on 1 July 2006, and is
required to be enforced and became a law in each member
state.

 This directive restricts (with exceptions) the use of six

hazardous materials in the manufacture of various types of
electronic and electrical equipment.

 It is closely linked with the Waste Electrical and Electronic

Equipment Directive (WEEE) 2002/96/EC which sets
collection, recycling and recovery targets for electrical goods
and is part of a legislative initiative to solve the problem of
huge amounts of toxic electronic waste.
 RoHS is often referred to as the "lead-free directive," but it
restricts the use of the following ten substances:

◦ Lead (Pb)
◦ Mercury (Hg)
◦ Cadmium (Cd)
◦ Hexavalent chromium (Cr6+)
◦ Polybrominated biphenyls (PBB)
◦ Polybrominated diphenyl ether (PBDE)
◦ Bis(2-ethylhexyl) phthalate (DEHP)
◦ Butyl benzyl phthalate (BBP)
◦ Dibutyl phthalate (DBP)
◦ Diisobutyl phthalate (DIBP)
18

In 1975, he
updated his
prediction to
once every 18-
24 months.
 Miniaturization size of
transistor from 10µm
(micron) to submicron.
Nowadays, the smallest
transistor is 45nm
(0.045µm).

 The law is still disputed

because the linear growth
starts to decline; the
number of transistors
should increase linearly,
but it starts to decrease
after 1970.
 Year Technology No. of transistors Example

1947-1950 Transistor 1 -
1951 -1960 Discrete Component 1 FET, Diode

1961 -1966 SSI 10 Logic Gates, Flip-flop

- Small scale integration
1967-1971 MSI 100 – 1000 Counter, Multiplexer
- Medium scale integration
1972-1980 LSI 1000 – 20,000 RAM, Microprocessor
- Large scale integration
1981 -1990 VLSI 20,000 – 1,000,000 16 bits and 32 bits Microprocessor
- Very large scale integration
1990-2000 ULSI 1,000,000 – Graphic microprocessor
- Ultra large scale integration 10,000,000

2000 - GSI > 10,000,000 -

nowadays
- Giga scale integration
1.3 CLASSIFICATION OF INTEGRATED
CIRCUIT
a. Substance – Silicon , Germanium

b. Compound – Gallium Arsenide (GaAs)

and Indium Phosphid (InP)
a. Substance – Silicon , germanium

Silicon Germanium

the most widely used type of used in many early devices from
semiconductor material. radar detection diodes to the first
transistors.

Its major advantage is that it is Diodes show a higher reverse

easy to fabricate and provides conductivity and temperature
good general electrical and coefficient meant that early
mechanical properties. transistors could suffer from
thermal runaway.

forms high quality silicon oxide Offers a better charge carrier

that is used for insulation layers mobility than silicon and is
between different active elements therefore used for some RF
of the IC. devices.

not as widely used these days as

better semiconductor materials
are available.
b. Compound – Gallium Arsenide( GaAs) and Indium Phosphid (InP)

Gallium Arsenide (GaAs) Indium Phosphid (InP)

second most widely used type of Combination of indium and

semiconductor after silicon. phosphorus.

widely used in high performance Used in high power and high

RF devices where its high electron frequency electronics because of
mobility is utilised. its superior electron velocity.
It is also used as substrate for Has direct bandgap.
other III-V semiconductors, e.g.
InGaAs and GaInNAs.
brittle material and has a lower Application in optoelectronic
hole mobility than Silicon which components, high speed
makes applications such as P-type electronics and photovoltaics.
CMOS transistors not feasible.

difficult to fabricate and this More expensive than GaAs and

increases the costs of GaAs silicon.
devices.
 In general, IC can be classified into FOUR (4)
categories :

 Classification based on the fabrication method

 Classification based on transistor type

 Classification based on circuits function

 Classification based on design methodology

IC Classification based on fabrication method:
a. Monolithic
b. Film
c. Hybrid
a. Monolithic

The word ‘monolithic’ is derived from the Greek

word monos, meaning ’single’ and lithos, meaning
‘stone’.

A monolithic IC is a miniaturized electronic circuit

including both active and passive components
and their interconnections are being manufactured
in the surface of a thin substrate of semiconductor
material.
-Advantages of monolithic IC:
-- most popular because of low cost.
- high reliability.

Disadvantages of monolithic IC:

- isolation weakness
- limited range of passive components.
- circuit design is not flexible.
b. Film
Film components are made of either
conductive or nonconductive material that is
deposited in desired patterns on a ceramic or
glass substrate.

Film can only be used as passive circuit

components, such as resistors and capacitors.
Transistors and/or diodes are added to the
substrate to complete the circuit.
c. Hybrid IC
Hybrid integrated circuit technology is the
combination of monolithic circuits and film
technology.

The active components are monolithic transistors or diodes. The

passive components may be group of monolithic resistors or
capacitors on a single chip, or they may be thin-film components.
Wiring or a metallized pattern provides connections between
chips.
Hybrids ICs are widely used for high power audio amplifier
applications from 5 W to more than 50 W.
 Hybrid ICs usually have better performance than monolithic
ICs.

 However, the process is too expensive for mass production.

 Thus, multi-chip techniques are quite economical for small

quantity production and are more often used as prototypes for
monolithic ICs.
Characteristics Monolithic Technology Film Technology Hybrid Technology

Type of components Active and passive Passive (Resistor & Active and passive
Capacitor)

Substrate material Silicon (Si) Conduction layer on Silicon and insulator

Germanium(Ge) insulator (glass,
Gallium Arsenide (GaAs) ceramic)

Interconnection On substrate surface Metal (Al or gold) Interconnection of

method two or more chips

Technology method BJT, MOS,GaAs Thin film = 0.5m Combination of

Thick film = 25m monolithic and film

Size Medium Small Large

Types of transistor

MOS BiCMOS

PMOS
NMOS
CMOS
VMOS
 NPN PNP
Cross section and Symbol Cross section and Symbol
 Advantages Of BJT:
i. High switching speed
ii. High durability
iii. High power handling capability

 Disadvantages Of BJT:
i. High power dissipation
ii. Large chip size
iii. Temperature sensitive
 MOS transistor is known as MOSFET (metal oxide
semiconductor field-effect transistor).
 MOSFET is widely used nowadays in electronic
equipment, e.g. mobile phone, computer, medical
electronic equipment, etc.
 Examples of MOS technology are:
i. PMOS
ii. NMOS
iii. CMOS
iv. VMOS
PMOS Cross Section PMOS Symbol

NMOS Cross Section NMOS Symbol

 CMOS Cross
Section :

2-input NAND gate symbol

Schematic diagram of 2-
input NAND gate using
CMOS
 One of the disadvantages of CMOS
technology is the disability of handling high
power.
 VMOS is invented to overcome the problem.

VMOS has the capability to operate in high

current and voltage.
 VMOS is the acronym of Vertical Metal Oxide
Semiconductor.
 VMOS has the V shape gate to conduct more
carriers vertically from SOURCE to DRAIN.
G
S S

+ +

P P

D
 BiCMOS is the acronym of bipolar complementary
metal oxide semiconductor , the technology that
combines BJT and CMOS on the same chip to
generate high speed and high concentration circuit.
 MOS Advantage Disadvantage
Transistor
Types
i. Low fabrication cost. i. Low circuit performance (slow).
PMOS ii. Simple fabrication method. This is because the hole current mobility
is two times slower than electron.

i. Smaller size compared to PMOS. i. Fabrication process is more difficult

NMOS ii. High circuit performance. compare to PMOS.

i. Low power dissipation. i. Larger size compared to PMOS and

CMOS NMOS.
i. High circuit performance (high speed). i. Larger chip size.
BiCMOS ii. Low power dissipation. ii. Complex fabrication process.
iii. High fabrication cost.

i. Capable of operating in high current i. Complex fabrication process.

VMOS and voltage. ii. High fabrication cost.
ii. High circuit performance (high speed).
 Integrated Circuit

Mixed signal IC
-IC that contains both
digital and analogue
circuits on the same
Digital chip.
Linear / Analog -Mixed Signal – often
Integrated circuits that operate with
Integrated circuits that operate with used to convert
digital signal at the input and output –
analogue signal at the input and analogue signal to
Discrete square wave signal
output - continuous sine wave signal . digital signal so that
Examples:
Examples: digital devices can
i. Logic gates
i. Op-Amp
ii. Flip-flop process the signal.
ii. Power Amplifier -Example : cell phone
iii. Counter
iii. Multiplier IC, portable
iv. Calculator chips
iv. Comparator technologies ADC.
v. Memory
v. Voltage Regulator
vi. Microprocessor