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SCR Dynamic Characteristics

The document discusses the dynamic characteristics of SCRs and MOSFETs during turn on and turn off. It describes the construction and working of N-channel enhancement MOSFETs, IGBTs, and their VI and switching characteristics. The document also discusses turn on methods, voltage and current ratings, protection circuits including snubber circuits, di/dt protection using inductors, and parallel operation of MOSFETs.

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NANDINI SINHA
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875 views25 pages

SCR Dynamic Characteristics

The document discusses the dynamic characteristics of SCRs and MOSFETs during turn on and turn off. It describes the construction and working of N-channel enhancement MOSFETs, IGBTs, and their VI and switching characteristics. The document also discusses turn on methods, voltage and current ratings, protection circuits including snubber circuits, di/dt protection using inductors, and parallel operation of MOSFETs.

Uploaded by

NANDINI SINHA
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd

RV College of

Engineering Go, Change the World

Dynamic Characteristics of SCR during turn ON

td-Delay time
tr-Rise time
ts-Spread time
Ton-Turn on time=
td+tr+ts
RV College of
Engineering Go, Change the World

Dynamic Characteristics of SCR during turn OFF

trr-Recovery time
tgr-Gate recovery
time
Toff-Turn off time=
trr+tgr
Tq-circuit turn-off
time
RV College of
Engineering Go, Change the World

N channel Enhancement type MOSFET


RV College of
Engineering Go, Change the World

VI Characteristics of MOSFET
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Switching Characteristics of MOSFET


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IGBT construction and working


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Engineering Go, Change the World

Equivalent and simplified circuit of IGBT


RV College of
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VI Characteristics of IGBT
RV College of
Engineering Go, Change the World

Switching Characteristics of IGBT


RV College of
Engineering Go, Change the World
RV College of
Engineering Go, Change the World
RV College of
Engineering Go, Change the World

Turn On Methods of MOSFET/IGBT


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Engineering Go, Change the World
RV College of
Engineering Go, Change the World

Voltage Ratings(Cont’d)
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Current Ratings
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Current Ratings(Cont’d)
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Engineering Go, Change the World

Protection Circuits
• Protection Against dv /dt and Over voltages [Snubber Circuits]
• di /dt Protection with the help of Inductor
• Overcurrent Protection
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Engineering Go, Change the World

Design of snubber
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Engineering Go, Change the World

di /dt Protection with the help of Inductor


RV College of
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Design the snubber circuit elements Rs and Cs connected across the SCR given that
dv/dt (max) = 180 V / µ s and di/dt (max) = 45 A / µ s. An inductance L = 0.1 H and a
resistance R<< Rs are in series with the SCR with a 300 V DC applied to the circuit.
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Engineering Go, Change the World

Solution cont’d
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Engineering Go, Change the World

Parallel Operation of MOSFET


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Engineering Go, Change the World

Two MOSFETS which are connected in parallel similar to Fig. carry a total current of IT = 20 A. The
drain-to-source voltage of MOSFET M1 is Vds1 = 2.5V and that of MOSFET M2 is Vds2 = 3 V.
Determine the drain current of each transistor and difference in current sharing if the current
sharing series resistances are (a) Rs1 = 0.3 ohm and Rs2 = 0.2 ohm, and (b) Rs1 = Rs2= 0.5 ohm.
RV College of
Engineering Go, Change the World

Solution Cont’d
RV College of
Engineering Go, Change the World

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