ECE 1001 : BASIC ELECTRONICS

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 Part – I : Analog Electronics

CHAPTER-1: DIODES AND APPLICATONS

Reference:

Robert L. Boylestad, Louis Nashelsky, Electronic Devices &

Circuit Theory, 11th Edition, PHI, 2012

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 Module – 1 : Diodes
Learning outcomes
At the end of this module, students will be able to:
Explain the operation of PN junction diode under different biasing condition.
Draw the I-V characteristic of diode and differentiate between ideal and
practical diodes
Explain the concept of static and dynamic resistance of the diode.

Explain various breakdown phenomenon observed in diodes.

Describe the working of Zener diode and its I-V characteristic.

Explain the operation of diode as capacitor.

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 Review

 Basic of Semiconductors

 Doping in Semiconductors

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 Semiconductors

Common semiconducting materials

Crystal structure of silicon

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ctures/ch4/node1.html w/basic-semi/sld007.htm

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 Doping in Semiconductors

Schematic of a silicon crystal lattice doped with impurities to

produce n-type and p-type semiconductor material.
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 Self test

1.Why silicon is preferred over germanium for

semiconductor devices?

2.List different elemental and compound semiconductors.

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 P-N Junction Diode

Anode Cathode
P N

Common practical diodes available in market

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 P-N Junction Diode- conti…

Used in numerous applications

•Switch,
•Rectifier,
•Regulator,
•Voltage multiplier,
•Clipping,
•Clamping, etc.

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 P-N Junction Diode under biasing

P-N junction (a) in contact (b) formation of depletion

region
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 P-N Junction Diode under biasing condition

Unbias condition

Diode under zero bias conditions

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 Forward bias

 Positive of battery connected to p-type (anode)

 Negative of battery connected to n-type (cathode)

Diode under forward biasing conditions

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 Reverse bias

 Positive of battery connected to n-type material (cathode)

 Negative of battery connected to p-type material (anode)

Diode under reverse biasing conditions

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 Self test

1. The arrow direction in the diode symbol indicates

a. Direction of electron flow.
b. Direction of hole flow (Direction of conventional current)
c. Opposite to the direction of hole flow
d. None of the above

2. When the diode is forward biased, it is equivalent to

a. An off switch b. An On switch
c. A high resistance d. None of the above

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I-V characteristic of practical diode

(mA) Diode symbol

P N

Vγ is 0.6 ~ 0.7 Vfor Si

0.2 ~ 0.3 V for Ge

(μA)

I-V characteristic of Practical diode

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 Silicon vs. Germanium

I-V characteristic of silicon and germanium practical diode

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ml
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 Breakdown phenomenon in diodes

Two breakdown mechanisms:

• Avalanche breakdown :
• Occurs in Lightly doped diodes,
• Occurs at high reverse Voltage.

• Zener Breakdown:
• Occurs in heavily doped diodes.
• at lower reverse bias voltages.

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 Diode current equation

I D  I o (eVD VT  1)
VD VT
 I oe  Io
 ID is diode current
 Io is reverse saturation current
 VD is voltage across diode
 VT is thermal voltage = T / 11600
 η is a constant = 1 for Ge and 2 for Si
 For positive values of VD (forward bias), I D  I o eVD VT

 For large negative values of VD (reverse bias), ID ≈ –Io

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 Effect of Temperature on the Reverse current
Reverse current doubles for every 10 degree rise in temperature.
(T2 T1 ) / 10
I o 2  I o1 2
Q1. A Silicon diode has a saturation current of 1pA at 200C. Determine (a)
Diode bias voltage when diode current is 3mA (b) Diode bias current when
the temperature changes to 1000C, for the same bias voltage.

A.  VD  T 293

I D  I0 e VT
 1 VT    25.25 mV
  11600 11600
 
 I 
VD  VT ln1  D   1.103V
 I0 

Q2. A Si diode has reverse sat current 12nA at 20oC. (a) Find the diode
current when it is forward biased by 0.65 V. (b) Find the diode current
when the temperature rises to 100oC.

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Effect of Temperature on the Reverse current

I (mA)
–75oC

125oC 25oC

V (volts)

I (μA)

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 Diode resistances
 Static or DC resistance: AC resistance:
• ratio of diode voltage and
VD VD VT
diode current rd  rd  
I D I D ID
VD
RD 
ID

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 Diode resistances
Two types of resistances are defined for a diode :

 Static or DC resistance:
• It is simply the ratio of diode voltage and diode current

RD=VD/ID
• Lower the current through the diode, higher the DC
resistance level
• The dc resistance at the knee and below will be greater than
the resistance at the linear section of characteristics
• The dc resistance in the reverse bias region will naturally be
quite high
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Engineering,
Manipal Institute of Technology, Manipal, INDIA
Department of Electronics and Communication Engineering, MIT, Manipal
 Diode resistances

 Determine the dc
resistances at the
three different
operating points A, B
and C.

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Engineering,
Manipal Institute of Technology, Manipal, INDIA
Department of Electronics and Communication Engineering, MIT, Manipal
 Diode resistances

 Dynamic or AC resistance
• Often sinusoidal voltages are applied to diode
• So the instantaneous operating point moves up and down in
the characteristic curve
• So DC resistance is not a suitable parameter
• Instead, AC resistance is used
• It is the change in the diode voltage divided by the
corresponding change in the diode current, where the
change is as small as possible
VD
rd 
I D
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Engineering,
Manipal Institute of Technology, Manipal, INDIA
Department of Electronics and Communication Engineering, MIT, Manipal
 Diode resistances

 Determine the
AC resistances
at operating
points A and B

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Engineering,
Manipal Institute of Technology, Manipal, INDIA
Department of Electronics and Communication Engineering, MIT, Manipal
 Diode resistances
 AC resistance is nothing but reciprocal of the slope of the tangent
line drawn at that point
 AC resistance in reverse region is very high, since slope of
characteristic curve is almost zero
 Derivative of a function at a point is equal to the slope of the
tangent line at that point

d
dVD
(I D ) 
d
dVD
I o eVD /VT  I o  
dI D ID  Io

dVD VT
VD dVD VT V
rd     T
I D dI D I D  I o ID
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Engineering,
Manipal Institute of Technology, Manipal, INDIA
Department of Electronics and Communication Engineering, MIT, Manipal
 Ideal Diode
 Cut-in voltage is zero
 No barrier potential. Small forward bias voltage
causes conduction through the device
 Forward resistance is zero
 Reverse resistance is infinity
 Conducts when forward biased and blocks conduction
when reverse biased. Hence reverse saturation current
is zero

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Manipal Institute of Technology, Manipal, INDIA

Department of Electronics and Communication Engineering, MIT, Manipal

 Practical Diode
 For conduction, the barrier potential has to be
overcome
 Forward resistance is in the range of tens of ohms
 Reverse resistance is in range of mega ohms
 Does not conduct when reverse biased. However
there is reverse saturation current flowing through the
device

Department of Electronics and Communication

Engineering,
Manipal Institute of Technology, Manipal, INDIA
Department of Electronics and Communication Engineering, MIT, Manipal
 Ideal diode : I-V characteristics

I-V characteristic of Ideal diode and ideal models

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 Diode Equivalent Circuit

 Used during circuit analysis

 Characteristic curve replaced by straight-line segments

A K

1/RF A K Forward bias

RF
RR =  Vγ
A K Reverse bias
Vγ

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 Diode Equivalent Circuit

 As further approximation, we can neglect the slope of the

characteristic i.e., RF = 0

A K

RF = 0

A K Forward bias
RR = 
Vγ
A K Reverse bias
Vγ

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 Diode Equivalent Circuit

 As third approximation, even the cut-in voltage can be

neglected (Ideal diode)

A K

RF = 0

A K Forward bias
RR = 

Vγ = 0 A K Reverse bias

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 Tutorials

1. Calculate the dynamic forward and reverse resistance of a P - N junction diode, when
the applied voltage is 0.2V for Germanium Diode. I 0 = 30μA at a temperature 125oC.

2. A silicon diode is reverse biased with 5V at room temperature. if reverse sat current is
60pA, what is the diode current?

3. A germanium diode carries a current of 10mA when it is forward biased with

0.2V at 27oC. (a) Find reverse sat current. (b) Find the bias voltage
required to get a current of 100mA.

4. Calculate the factor by which reverse saturation current of silicon diode is

multiplied when the temperature increases from 25 to 100 OC.

Department of Electronics and Communication

Engineering,
Manipal Institute of Technology, Manipal, INDIA
Department of Electronics and Communication Engineering, MIT, Manipal
Diode as capacitor- Varactor diode

A
C
d
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 Self test

1. The break-point voltage of Si diode is

a. 0.2V b. 0.7V c. 0.8V d. 1.0V

2. Why would you use silicon diodes instead of

germanium diodes?

Department of Electronics and Communication Engineering, MIT, Manipal 35

 Breakdown phenomenon in diodes

Two breakdown mechanisms:

• Avalanche breakdown :
• Occurs in Lightly doped diodes,
• Occurs at high reverse Voltage.

• Zener Breakdown:
• Occurs in heavily doped diodes.
• at lower reverse bias voltages.

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 Avalanche Breakdown

Schematic of Avalanche phenomenon

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 Zener Breakdown

Schematic of Zener phenomenon

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 Zener Diode and its characteristics

P N

Anode Cathode

IZK or IZmin
IZM or IZMax

PZM or PZMax

PZM = VZ.IZM

I-V characteristics of Zener diode

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 Equivalent circuit

 Equivalent circuits of Zener diode

N N N N
– +
Vγ VZ
+ –
RR ≈  RZ
RF
P P P P

Forward Reverse Breakdown

 Note: RZ is usually very small, can be neglected

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 Self test

1. Explain the principle of PIN diode.

2.What is the difference between PN diode and Schottky diode.
3.Which type of diode exhibits negative resistance and why?
4. Which of the following is not an essential element of a dc
power supply
a. Rectifier
b. Filter
c. Voltage regulator
d. Voltage amplifier

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 Self test

5. What is true about the breakdown voltage in a Zener diode?

a. It decreases when current increases.
b. It destroys the diode.
c. It equals the current times the resistance.
d. It is approximately constant

6. Which of these is the best description of a Zener diode?

a. It is a rectifier diode.
b. It is a constant voltage device.
c. It is a constant current device.
d. It works in the forward region.

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 Exercises
1. Calculate the dynamic forward and reverse resistance of a P - N
junction diode, when the applied voltage is 0.25V for Germanium
Diode. I0 = lμA and T = 300 K.
(Ans:rf=1.734 Ω; rr=390 MΩ)

2. A germanium diode has reverse saturation current of 0.19μA.

Assuming η =1, find the current in the diode when it is forward biased
with 0.3 V at 27oC. (Ans: 19.5mA)

3. The forward current in a Si diode is 15 mA at 27oC. If reverse

saturation current is 0.24nA, what is the forward bias voltage?
(Ans: 0.93V)

4. A germanium diode carries a current of 10mA when it is forward

biased with 0.2V at 27oC. (a) Find reverse sat current. (b) Find the
bias voltage required to get a current of 100mA.
(Ans: 4.42μA, 0.259V)

Department of Electronics and Communication Engineering, MIT, Manipal 43