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RRAM: Resistive Random Access Memory (Memristor)

RRAM (Resistive Random Access Memory), also known as memristor, is a type of non-volatile memory that could replace DRAM and flash memory. The document discusses the history of memristor theory and HP's working prototype in 2008. It also summarizes potential applications in mass storage devices and as a successor to DRAM. While the physics of resistance switching in RRAM is still unclear, it involves perovskite oxides, transition metal oxides or molecular materials. The document concludes that the reason for resistance switching is unknown but that RRAM can be built from different materials and has advantages over today's memory technologies.

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Shafkat Sakeebur Rahman
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1K views14 pages

RRAM: Resistive Random Access Memory (Memristor)

RRAM (Resistive Random Access Memory), also known as memristor, is a type of non-volatile memory that could replace DRAM and flash memory. The document discusses the history of memristor theory and HP's working prototype in 2008. It also summarizes potential applications in mass storage devices and as a successor to DRAM. While the physics of resistance switching in RRAM is still unclear, it involves perovskite oxides, transition metal oxides or molecular materials. The document concludes that the reason for resistance switching is unknown but that RRAM can be built from different materials and has advantages over today's memory technologies.

Uploaded by

Shafkat Sakeebur Rahman
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPT, PDF, TXT or read online on Scribd

RRAM: Resistive Random Access

Memory (Memristor)

Md. Rezaul Kabir


mrkabir@[Link]

Markus Soldemo
soldemo@[Link]

IM2654 Smart Electronic Materials


2008 – 11 – 07
Agenda
Memristor / RRAM

History

Applications

Physics

Conclusions
Memristor, HP labs
Memristor / RRAM

Memristor symbol Memristor, HP labs


History

1971: The theory of the Memristor 2008: HP has a working memristor prototype

1960s: Resistance switching End of 1990s: Research on resistance switching


Applications
RRAM, successor to:
Memristor

DRAM

Mass storage devices


Memristor, HP labs
Physics
Schematic view of RRAM cell

Materials/structures used
 Perovskite oxides
 Transition metal oxides

 Molecular materials

Reasons for resistance switching


Schematic view of RRAM cell

Al / TiOx / Al ”Sandwich”
Materials/structures used
Perovskite oxides
SrTiO3 (STO), SrZrO3 (SZO)

SZO

Perovskite oxide structure


SrZrO3 (SZO) – Voltage – Current diagram
Materials/structures used
Transition metal oxides
TiO2, Co-O

Al / TiOx / Al ”Sandwich”

TMO – Voltage – Current diagram

Memristor, HP labs
Materials/structures used
Molecular materials
 Conductive filaments Conductive filaments

 Interfacial effects

 Trapped charges
Interfacial effects

Trapped charges
Reasons for resistance switching
”...so far the reasons for the ”The microscopic nature of
resistive switching induced by resistance switching and charge
voltage pulse or bias voltage are transport in such devices is till
not clear.” under debate, but one proposal
is that the hysteresis requires
- Chih-Yi Liu, Pei-Hsun Wu, Arthur Wang, Wen-Yueh Jang,
Jien-Chen Young, Kuang-Yi Chiu, and Tseung-Yuen Tseng, some sort of atomic
”Bistable Resistive Switching of a Sputter-Deposited Cr-
doped SrZrO3 Memory Film”, IEEE ELECTRON DEVICE rearrangement that modulates
LETTERS, VOL. 26, NO. 6, JUNE 2005
the electronic current.”
- Dmitri B. Strukov, Gregory S. Snider, Duncan R. Stewart &
R. Stanley Williams, ”The missing memristor found”, Nature,
Vol 453, 1 May 2008, doi:10.1038/nature06932
Conclusions
 The reason for resistance switching is unknown

 RRAMs can be build by different kinds of materials

 The RRAM has advantages on today's memories

 The memristor is found and may have other applications


than RRAM
Sources

H. Shima, Y. Tamai, Oxide nanolayer improving RRAM operational performance, Microelectron. J (2008),
doi:10.1016/[Link].2008.06.096

Chih-Yang Lin, Chih-Yi Liu, Chun-Chieh Lin, T.Y, Tseng, ”Current status of resistive nonvolatile memories”, J Electroceram, DOI
10.1007/s10832-007-9081-y, 2007

Dmitri B. Strukov, Gregory S. Snider, Duncan R. Stewart & R. Stanley Williams, ”The missing memristor found”, Nature, Vol 453, 1
May 2008, doi:10.1038/nature06932

Chih-Yang Lin, Meng-Han Lin, Ming-Chi Wu, Chen-Hsi Lin, [Link] Tseng, ”Improvement of Resistive Switching
Characteristics in SrZrO3 Thin Films With Embedded Cr Layer”, IEEE ELECTRON DEVICE LETTERS, VOL. 29, NO. 10, OCTOBER
2008

Chih-Yi Liu, Pei-Hsun Wu, Arthur Wang, Wen-Yueh Jang, Jien-Chen Young, Kuang-Yi Chiu, and Tseung-Yuen Tseng, ”Bistable
Resistive Switching of a Sputter-Deposited Cr-doped SrZrO3 Memory Film”, IEEE ELECTRON DEVICE LETTERS, VOL. 26, NO. 6,
JUNE 2005

Picture references
Slide 2, 3, 5, 9 [Link] (accessed: 2008-11-04)
Slide 3 [Link] (accessed 2008-11-04)
Slide 5 [Link] (accessed 2008-11-05)
Slide 5 [Link] (accessed 2008-11-05)
Slide 7, 9 Lee-Eun Yu, Sungho Kim, Min-Ki Ryu, Sung-Yool Choi and Yang-Kyu Choi, ”Structure Effects on Resistive Switching
of Al/TiOx/Al Devices for RRAM Applications”, IEEE ELECTRON DEVICE LETTER, VOL. 29, NO. 4, APRIL 2008
Slide 8 [Link] (accessed 2008-11-04)
Slide 8 Chih-Yang Lin, Chih-Yi Liu, Chun-Chieh Lin, T.Y, Tseng, ”Current status of resistive nonvolatile memories”, J
Electroceram, DOI 10.1007/s10832-007-9081-y, 2007.
Slide 9 Chih-Yang Lin, Chih-Yi Liu, Chun-Chieh Lin, T.Y, Tseng, ”Current status of resistive nonvolatile memories”, J
Electroceram, DOI 10.1007/s10832-007-9081-y, 2007.
Questions

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