Avalanche
Transit Time
Devices
INTRODUCTION
Rely on the effect of voltage breakdown
across a reverse biased p-n junction.
The avalanche diode oscillator uses
carrier impact ionization and drift in the
high field region of a semiconductor
junction to produce a negative resistance
at microwave frequencies.
INTRODUCTION
Two distinct modes of avalanche
oscillator is observed i) IMPATT(impact
ionization avalanche transit time
operation)
Dc-to-RF c.e is 5 to 10%
ii) TRAPPAT (Trapped plasma avalanche
triggered transit operation). 20 to 60%
Another type of active microwave device
is BARITT (barrier injected transit time
diode)
IMPATT DIODE
Form of high power diode used in high
frequency electronics and microwave
devices
Typically made from silicon carbides due
to their high breakdown fields.
3 to 100 GHz
High power capability
From low power radar systems to alarms
Generate high level of phase noise
avalanche process.
IMPATT Diode as oscillator
The IMPATT diode family includes many
differentjunctionsand
metalsemiconductor devices.
The first IMPATT oscillation was obtained
from a simple siliconp-n junctiondiode
biased into a reverse avalanche break
down and mounted in a microwave
cavity.
Electronhole pairs are generated in
the high field region.
The generated electron immediately
moves into the N region, while the
generated holes drift across the P
region.
The time required for the hole to reach
the contact constitutes the transit time
delay.
The original proposal for a microwave
device of the IMPATT type was made by
Read.
The Read diode consists of two regions
(i) The Avalanche region (a region with
relatively highdopingand high field) in
which avalanche multiplication occurs
and (ii) the drift region (a region with
essentially intrinsic doping and constant
field) in which the generated holes drift
towards the contact.
Read diode is the basic type in the
IMPACT IONIZATION
If a free electron with sufficient energy
strikes a silicon atom, it can break
thecovalent bondof silicon and liberate an
electron from the covalent bond.
If the electron liberated gains energy by
being in an electric field and liberates other
electrons from other covalent bonds then
this process can cascade very quickly into a
chain reaction producing a large number of
electrons and a large current flow.
This phenomenon
avalanche.
is
called
impact
PHYSICAL DESCRIPTION
+ very high doping
i or v intrinsic material
Two regions
1)Thin p region (High field/Avalanche
region) avalanche multiplication occurs
2) Intrinsic region (Drift region)
generated holes must drift towards the
p+ contact
Physical Description
The space between n+ -p junction and
the i p+ junction is called the space
charge region
The diode is reverse biased and mounted
in a microwave cavity. The impedance of
the cavity is mainly inductive which is
matched with the capacitive impedance
of the diode to form a resonant circuit.
Such device can produce a negative ac
resistance that in turns delivers power
AVALANCHE MULTIPLICATION
When the reverse bias voltage is above
the breakdown voltage, the space charge
region always extends from n+ -p
junction to the i p+ junction through the
p and the i regions.
The fixed charges are shown in the figure.
A positive charge moves from left to right
and gives a rising field. The maximum
field which is at the
n+ -p junction is
about several hundred kilovolt/cm
Carriers (holes) in the high field region
near the
n+ -p junction acquire energy
to knock down the valence electrons in
the conduction band and hence electron
hole pairs are generated. This is
The electrons move into the n+ region
and the holes drift through the space
charge region to the p+ region with a
constant velocity vd.
The field throughout the space charge is
about 5 kV/cm.
The transit time of a hole across the drift
i-region L is given by
And the avalanche multiplication factor is
The breakdown voltage for a silicon p+ -n
junction can be expressed as
Breakdown voltage vs impurity
doping
Carrier Current Io(t) and
External Current Ie(t)
The diode can be mounted in a
microwave resonant circuit
An ac voltage can be maintained at a
given frequency in the circuit, and the
total field across the diode is the sum of
ac and dc fields which causes breakdown
at the n+ -p junction during the positive
half cycle of the ac voltage cycle if the
field is above the breakdown voltage.
The carrier current (hole current in this
case) Io(t) generated at the n+ -p
junction by the avalanche multiplication
During the negative half cycle, when the
field is below breakdown voltage, the
carrier current decays exponentially.
Io(t) is in the form a pulse of very short
duration and it reaches its maximum in
the middle of the ac voltage cycle or one
quarter of the cycle later than the
voltage.
Under the influence of electric field the
generated holes are injected into the
space region towards the negative
terminal.
As the injected holes traverse the drift
space,
1)they induce a current Ie(t) in the
external circuit.
2)Cause a reduction of the field
Since the velocity of the holes in the
space charge is constant
The external current Ie(t) because of the
moving holes is delayed by 90 relative to
the pulsed Io(t).
Since the carrier current Io(t) is delayed
by one quarter cycle or 90 relative to the
ac voltage, Ie(t) is then delayed by 180
relative to the voltage.
Hence negative conductance occurs and
the diode can be used for microwave
oscillation and amplification.
