UTAA Electronic Circuits Lab II
EEE 208
LAB 6
MOSFET CHARACTERIZATION
The purpose of this lab is to understand the current-voltage characteristics of a n-channel MOSFET (i.e. to
understand the dependence of drain current on gate voltage and drain-source voltage).
Concept
MOSFET is a four-terminal device with the terminals named as Source, Gate, Drain and Substrate (or Body). In a
n-channel MOSFET, the substrate (which is p-type) is connected to ground or a negative voltage. Source and drain
are two heavily doped regions with carrier type opposite to that of the substrate (p-type). Gate region is in between
source and drain and is stacked with an oxide layer and a metal layer over it. Schematic of an n-channel MOSFET
is shown in Figure 7.1.
In NMOS transistor, a positive voltage is applied to the gate terminal to create a n-channel underneath the gate and
thus, forming a conductive region from the source to the drain.
When a drain-source voltage is applied to the NMOS transistor, carriers (electrons) flow from the source region to
the drain region through the channel created underneath the gate. This flow of current, called the drain current, I d,
depends on the gate voltage (Vg), drain-source Voltage (Vds), threshold voltage (Vt) and various physical
parameters (kn).
In triode region (linear region), when we applied Vds < (Vgs – Vt), the drain current shows linear dependence on
Vds and is given by
Figure 7.1. (a) Cross-sectional view of a n-channel MOSFET (b) Circuit symbol of n-channel MOSFET
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UTAA Electronic Circuits Lab II
Experiment
Use N-Channel MOSFET – ZVN2110A
Figure 7.2. Circuit for MOSFET Characteristics
PART A: Id - Vds characteristics
1. Build the circuit as shown in Figure 7.2.
2. Vary Vgs (by varying VGG) from 0 V to 6 V in steps of 2 V and for each Vgs vary Vds (by changing Vdd) from
0 V to 4 V in appropriate steps until reaching close to saturation and so on. Measure Id at each Vgs and Vds step.
𝐕𝐆𝐆 𝐕𝐃𝐃 𝐈𝐃 𝐕𝐃𝐒 𝐕𝐃𝐃 𝐈𝐃 𝐕𝐃𝐒 𝐕𝐃𝐃 𝐈𝐃 𝐕𝐃𝐒 𝐕𝐃𝐃 𝐈𝐃 𝐕𝐃𝐒
0V 0V 0.5V 1V 1.5V
2V 0V 0.5V 1V 1.5V
4V 0V 0.5V 1V 1.5V
6V 0V 0.5V 1V 1.5V
𝐕𝐆𝐆 𝐕𝐃𝐃 𝐈𝐃 𝐕𝐃𝐒 𝐕𝐃𝐃 𝐈𝐃 𝐕𝐃𝐒 𝐕𝐃𝐃 𝐈𝐃 𝐕𝐃𝐒 𝐕𝐃𝐃 𝐈𝐃 𝐕𝐃𝐒
0V 1.8V 2V 3V 4V
2V 1.8V 2V 3V 4V
4V 1.8V 2V 3V 4V
6V 1.8V 2V 3V 4V
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UTAA Electronic Circuits Lab II
3. Plot Id - Vds for each Vgs on the same graph.
4. Label the triode region (linear region) and, the saturation region on the plot.
5. Calculate ID using the formula given in previous page, for the condition V DD=3V and VGG=4V for Kn=0.027.
Then compare your theoretical ID value with the ID that you measured.
PART B: Id – Vgs characteristic
1. Build the circuit as shown in Figure 7.2.
2. Vary VGG from 0 V to 6 V in steps of 2 V and measure I D for a fixed VDD = 10 V.
𝐕𝐆𝐆 0V 2V 4V 5V 6V
𝐕𝐆𝐒
𝐈𝐃
3. Plot ID – VGS graph.
4. Determine the experimental transconductance from the graphs plotted in step 3.
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UTAA Electronic Circuits Lab II
PRELAB
Discuss the behavior of MOSFETs in triode region and saturation region. What is the main difference between
these two regions, state clearly.
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