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Tutorial 3

The document is a tutorial focused on analyzing and designing transistor circuits using hybrid-π parameters. It includes multiple problems that require calculating transistor parameters such as gm, rπ, and ro for different biasing conditions, as well as determining small-signal voltage gains and designing circuits to meet specific requirements. Each problem is accompanied by specific transistor parameters and circuit configurations, often referencing figures for clarity.

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Ranveer Hudda
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8 views2 pages

Tutorial 3

The document is a tutorial focused on analyzing and designing transistor circuits using hybrid-π parameters. It includes multiple problems that require calculating transistor parameters such as gm, rπ, and ro for different biasing conditions, as well as determining small-signal voltage gains and designing circuits to meet specific requirements. Each problem is accompanied by specific transistor parameters and circuit configurations, often referencing figures for clarity.

Uploaded by

Ranveer Hudda
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Tutorial 3

1. (a) If the transistor parameters are β = 180 and VA = 150 V, and it is biased at IC Q = 2 mA, deter
mine the values of gm, rπ, and ro. (b) Repeat part (a) if ICQ = 0.5 mA.
2. The transistor parameters are β = 125 and VA = 200 V. A value of gm = 200 mA/V is desired.
Determine the collector current required, and then find rπ and ro.
3. For the circuit in Figure 1, the transistor parameters are β = 120 and VA = ∞, and the circuit parameters
are VCC = 5 V, RC = 4 kΩ, RB = 250 kΩ, and VBB = 2.0 V. (a) Determine the hybrid-π parameter values of
gm, rπ, and ro. (b) Find the small-signal voltage gain Av = vo/vs. (c) If the
time-varying output signal is given by vo = 0.8 sin(100t) V, what is vs?

Figure 1
4. For the circuit in Figure 1, β = 120, VCC = 5 V, VA = 100 V, and RB = 25 kΩ. (a) Determine VBB and RC such
that rπ = 5.4 kΩ and the Q-point is in the center of the load line. (b) Find the resulting small-signal
voltage gain Av = vo/vs.
5. For the circuit in Figure 2, β = 100, VA = ∞, VCC = 10 V, and RB = 50 kΩ. (a) Determine VBB
and RC such that ICQ = 0.5 mA and the Q-point is in the center of the load line. (b) Find the small
signal parameters gm, rπ, and ro. (c) Determine the small-signal voltage gain Av = vo/vs.

Figure 2
6. Assume that β = 100, VA = ∞, R1 = 10 kΩ, and R2 = 50 kΩ for the circuit in Figure 3. (a)
Plot the Q-point on the dc load line. (b) Determine the small-signal voltage gain. (c) Determine the
range of voltage gain if each resistor value varies by ±5 percent.

Figure 3
7. The parameters of the transistor in the circuit in Figure 4 are β = 150 and VA = ∞. (a) Determine R1 and
R2 to obtain a bias-stable circuit with the Q-point in the center of the load line.
(b) Determine the small-signal voltage gain Av = vo/vs.

Figure 4
Tutorial 3

8. For the circuit in Figure 5, the transistor parameters are β = 100 and VA = ∞. Design the circuit such
that ICQ = 0.25 mA and VCEQ = 3 V. Find the small-signal voltage gain Av = vo/vs. Find
the input resistance seen by the signal source vs.

Figure 5
9. Assume the transistor in the circuit in Figure 6 has parameters β = 120 and VA = 100 V. (a)
Design the circuit such that VCEQ = 3.75 V. (b) Determine the small-signal transresistance
Rm = vo/is.

Figure 6

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