TD62C853,854F
TOSHIBA Bi−CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC
TD62C853F,TD62C854F
8BIT SERIAL−IN PARALLEL−OUT SHIFT REGISTER / LATCH DRIVERS
The TD62C853F and TD62C854F are monolithic circuits
designed to be used together with Bi−CMOS integrated circuits.
The devices consist of a 8 bit shift register, 8 bit latches, and 8
output circuits.
FEATURES
l 8 bit serial−in parallel−out shift register / latch driver
(Bi−CMOS process)
l Maximum output sustaining voltage ; 50 V
l Maximum output current ;
TD62C853F 200 mA / ch (Low saturation type)
TD62C854F 500 mA / ch (darlington type)
Weight: 0.32 g (Typ.)
l CMOS compatible inputs
l Package ; SSOP24−P−300−1.00
Note: S−OUT pin is sensitive against Latch−up. (Latch−up performance is under 30 mA)
Please connect an external resistor to S−OUT pin in series due to protect this device
from Latch−up. (Recommended resistance: R = 100 [Ω])
PIN CONNECTION (TOP VIEW)
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BLOCK DIAGRAM
TIMING DIAGRAM
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EQUIVALENT CIRCUITS OF INPUTS AND OUTPUTS
S−IN, CLOCK terminal equivalent circuits LATCH , RESET terminal equivalent circuits
ENABLE terminal equivalent circuits S−OUT terminal equivalent circuits
Output terminal equivalent circuits Output terminal equivalent circuits
(TD62C853F) (TD62C854F)
Note: The output parasitic diode cannot be used as clamp diode.
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TRUTH TABLE
OUT
CK E R LATCH S−IN S−OUT
O1 On
L H H L OFF On - 1 Q7
L H H H ON On - 1 Q7
L H L (*) NC NC Q7
H H (*) (*) OFF NC Q7
(*) (*) (*) (*) NC NC Q7
(*) (*) L H (*) OFF OFF L
(*) H L (*) NC NC L
CK = CLOCK (*) = DON’T CARE
E = ENABLE NC = NO CHANGE
R = RESET L = LOW LEVEL
LATCH = LATCH H = HIGH LEVEL
S−IN = SERIAL IN
OUT = PARALLEL OUT
S−OUT = SERIAL OUT
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Supply Voltage VDD −0.3~7.0 V
Output Sustaining Voltage VCE (SUS) −0.5~50 V
TD62C853P 200
Output Current IOUT mA / ch
TD62C854P 500
Input Voltage VIN ~0.4~VDD + 0.3 V
Power Dissipation PD 830 (Note) mW
Operating Temperature Topr −40~85 °C
Storage Temperature Tstg −55~150 °C
Note: On PCB (50 × 50 × 1.6 mm Cu 30% Glass Epoxy PCB)
The derating factor above Ta = 25°C: 6.6 mW / °C
PRECAUTIONS for USING
This IC does not integrate protection circuits such as overcurrent and overvoltage protectors.
Thus, if excess current or voltage is applied to the IC, the IC may be damaged. Please design the IC so that
excess current or voltage will not be applied to the IC.
Utmost care is necessary in the design of the output line, VDD and GND line since IC may be destroyed due to
short−circuit between outputs, air contamination fault, or fault by improper grounding.
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RECOMMENDED OPERATING CONDITIONS (Ta = −40~85°C)
CHARACTERISTIC SYMBOL CONDITION MIN TYP. MAX UNIT
Supply Voltage VDD ― 4.5 5.0 5.5 V
Input Voltage VIN ― 0 ― VDD V
Output Current (“H” Level) S−OUT IOH Ta = 25°C ― ― −0.4 mA
Output Voltage (“L” Level) On VOH ― 0 ― 50 V
S−OUT ― ― ― 0.4
DC 1 circuit, Ta = 25°C 0 ― 160
8 circuits on Duty = 10% 0 ― 160
TD62C853F Tpw = 25 ms
Output Ta = 85°C
VDD = 5.5 V Duty = 40% 0 ― 55 mA /
Current IOL
On ch
(“L” Level)
D C 1 circuit, Ta = 25°C 0 ― 360
8 circuits on Duty = 10% 0 ― 400
TD62C854F Tpw = 25 ms
Ta = 85°C
VDD = 5.5 V Duty = 50% 0 ― 170
Clock Frequency fCLOCK ― 1.5 ― ― MHz
Clock Pulse Width fw CLOCK ― 0.33 ― ― µs
Data Set Up Time tsetup ― 100 ― ― ns
Data Hold Time thold ― 100 ― ― ns
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ELECTRICAL CHARACTERISTICS (Ta = −40~85°C)
TEST
CHARACTERISTIC SYMBOL CIR− TEST CONDITION MIN TYP. MAX UNIT
CUIT
0.7
“H” Level VIH ― ― ― ―
VDD
Input Voltage V
0.3
“L” Level VIL ― ― ― ―
VDD
ENABLE, VDD = 5.5 V
“H” Level IIH ― 28 55 110
VIH = VDD
Input Current LATCH, RESET
“L” Level IIL ― −55 −110 −275 µA
VDD = 5.5 V, VIL = GND
CLOCK, S−IN
IIN ― ― ― ±1.0
VIN = VCC or GND
VDD = 4.5 V
“H” Level S−OUT VOH ― 3.9 4.1 ― V
IOH = −10 µA
S−OUT IOL = 0.8 mA ― 0.2 0.4
Output IOL = 100 mA ― 0.29 0.50
TD62C
Voltage
“L” Level 853F VOL ― VDD = 4.5 V IOL = 160 mA ― 0.39 0.65 V
On
TD62C IOL = 250 mA ― 1.24 1.90
854F IOL = 400 mA ― 1.54 2.30
Output
“H” Level On IOH ― VDD = 5.5 V, VOH = 50.0 V ― ― 100 µA
Current
IDD1 ENABLE = “H” ― 130 200
fCLK = 1 MHz
Output open
IDD2 ― 2.0 5.0
Operating Supply Current VDD = 5.5 V DATA = 1 / 2
― mA
Ta = 25°C fCLK
TD62C853F 1 circuit on ― 35 40
IDD3 fCLK = 1 MHz
TD62C854F ENABLE = “L” ― 1.0 1.4
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SWITCHING CHARACTERISTICS (Ta = 25°C)
TEST
CHARACTERISTIC SYMBOL CIR− TEST CONDITION MIN TYP. MAX UNIT
CUIT
CK−S−OUT ― 0.40 0.65
CK− On ― 1.80 3.00
Low−to
L− On tpLH ― ― 2.10 3.50
−High
R− On ― 1.50 2.50
Propagation E− On ― 1.50 2.50
µs
Delay Time
CK−S−OUT ― 0.33 0.55
VDD = 5.0 V, VIH = 5.0 V
CK− On ― 0.41 0.70
High−to VIL = 0 V, Duty = 50%
L− On tpHL ― ― 0.30 0.50
−Low
300Ω (TD62C853F)
R−S−OUT RL = ― 0.25 0.42
120Ω (TD62C854F)
E− On ― 0.21 0.35
Maximum Clock Frequency fMAX ― 1.5 2.0 ― MHz
CLOCK twCK ― 250 330
Minimum Pulse Width LATCH twL ― ― 116 160 ns
RESET twR ― 107 140
Data Set Up Time tsetup ― 30 60
― ns
Data Hold Time thold ― 14 40
Maximum Clock Rise Time tr ― 70 ―
― ns
Maximum Clock Fall Time tf ― 70 ―
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Fig.1 IOUT − VCE(sat) Fig.2 IOUT − VCE(sat)
TD62C853F each characteristic data and reference graph
Output current IOUT vs lighting rate DUTY,
Condition : 1~8 circuit operation, VDD = 5.5 V
Fig.3 DUTY − IOUT Fig.4 DUTY − IOUT Fig.5 DUTY − IOUT
(Topr = 85°C) (Topr = 55°C) (Topr = 25°C)
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TD62C854F each characteristic data and reference graph
Output current IOUT vs lighting rate DUTY,
Condition: 1~8 circuit operation, VDD = 5.5 V
Fig.6 DUTY − IOUT Fig.7 DUTY − IOUT Fig.8 DUTY − IOUT
(Topr = 85°C) (Topr = 55°C) (Topr = 25°C)
SSOP24 Power dissipation
Fig.9 PD − Ta
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PACKAGE DIMENSIONS
SSOP24−P−300−1.00 Unit: mm
Weight: 0.32 g (Typ.)
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RESTRICTIONS ON PRODUCT USE 000707EBA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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