SFP075N150C2,SFB072N150C2

N-MOSFET 150V, 6.2mΩ, 120A

Features Product Summary

 Enhancement Mode VDS 150V
 Very Low On-Resistance
RDS(on) 6.2mΩ
 Fast Switching
ID 120A

100% DVDS Tested

Applications
100% Avalanche Tested
• Motor control and drive 100% Avalanche Tested
 Battery management
• UPS (Uninterrupible Power Supplies)

SFP075N150C2 SFB072N150C2

Package Marking and Ordering Information

Part # Marking Package Packing Reel Size Tape Width Qty

SFP075N150C2 075N150C2 TO-220 Tube N/A N/A 50pcs

SFB072N150C2 072N150C2 TO-263 Tube N/A N/A 50pcs

Absolute Maximum Ratings (Ta = 25oC)

Characteristics Symbol Rating Unit

Drain-Source Voltage VDSS 150 V

Gate-Source Voltage VGSS ±20 V

o
TC=25 C (Silicon Limited) 144
(1) o
Continuous Drain Current TC=25 C (Package Limited) ID 120
A
o
TC=100 C 91

Pulsed Drain Current (3) IDM 480

o
TC=25 C 312
Power Dissipation PD W
TC=100oC 125

Single Pulse Avalanche Energy (2) EAS 450 mJ

o
Junction and Storage Temperature Range TJ, Tstg -55~150 C

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 SFP075N150C2,SFB072N150C2
N-MOSFET 150V, 6.2mΩ, 120A

Thermal Characteristics
Characteristics Symbol Rating Unit
(1)
Thermal Resistance, Junction-to-Ambient RθJA 62.5 o
C/W
Thermal Resistance, Junction-to-Case RθJC 0.4

Electrical Characteristics (TJ =25oC)

Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 150 - - V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 2.1 4.1 V
Drain Cut-Off Current IDSS VDS = 120V, VGS = 0V - - 1.0
μA
Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1
TO-220 6.2 7.5
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 50A - mΩ
TO-263 5.9 7.2
Forward Transconductance gfs VDS = 10V, ID = 100A - 70 - S

Dynamic Characteristics

Total Gate Charge Qg - 91 -

VDS = 50V, ID = 50A,
Gate-Source Charge Qgs - 33 - nC
VGS = 10V
Gate-Drain Charge Qgd - 25 -
Input Capacitance Ciss - 6,220 -
VDS = 40V, VGS = 0V,
Output Capacitance Coss - 2,220 - pF
f = 1.0MHz
Reverse Transfer Capacitance Crss - 94 -
Turn-On Delay Time td(on) - 40 -
Rise Time tr VGS = 10V, VDS = 50V, - 28 -
ns
Turn-Off Delay Time td(off) ID = 50A , RG = 3.0Ω - 69 -
Fall Time tf - 20 -
Gate Resistance Rg f=1 MHz - 3 - Ω
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 50A, VGS = 0V - 0.9 1.2 V
Body Diode Reverse Recovery Time trr - 153 - ns
IF = 50A, dl/dt = 100A/μs
Body Diode Reverse Recovery Charge Qrr - 655 - nC

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited
2. EAS is tested at starting Tj = 25℃, L = 1.0mH, IAS = 30.0A, VGS = 10V.
3. Pulse width limited by TJmax

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 SFP075N150C2,SFB072N150C2
N-MOSFET 150V, 6.2mΩ, 120A

180 8.0
VGS = 10V
10.0V

Drain-Source On-Resistance [mohm]

160 7.5
9.0V
8.0V
140
7.0V 7.0
ID, Drain Current [A]

120
6.5
6.0V
100 VGS = 10V
6.0
80
5.5
60
5.0
40
5.0V
4.5
20
4.0V
0 4.0
0 50 100 150
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

2.5 50
،‫ ط‬Notes :
،‫ ط‬Notes :
1. VGS = 10 V
ID = 100A
2. ID = 120 A
2.0 40
Drain-Source On-Resistance
Drain-Source On-Resistance
RDS(ON), (Normalized)

RDS(ON) [mohm]

1.5 30

TA = 25،‫ة‬

1.0 20

0.5 10

0.0 0
-50 -25 0 25 50 75 100 125 150 2 3 4 5 6 7 8 9 10

TJ, Junction Temperature [ C]

o VGS, Gate to Source Volatge [V]

Fig.3 On-Resistance Variation with Fig.4 On-Resistance Variation with

Temperature Gate to Source Voltage

100
،‫ ط‬Notes : ،‫ ط‬Notes :
90 100 VGS = 0V
VDS = 10V

80
IDR, Reverse Drain Current [A]
ID, Drain Current [A]

70

60
TA=25،‫ة‬ 10
50
TA=25،‫ة‬
40

30
1
20

10

0
0 1 2 3 4 5 6 7 8 0.0 0.3 0.6 0.9 1.2 1.5

VGS, Gate-Source Voltage [V] VSD, Source-Drain voltage [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature

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 SFP075N150C2,SFB072N150C2
N-MOSFET 150V, 6.2mΩ, 120A

10 10000
،‫ ط‬Note : ID = 50A Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
VDS = 50V
Crss = Cgd
8 8000
VGS, Gate-Source Voltage [V]

Ciss

Capacitance [pF]
6 6000

Coss
،‫ ط‬Notes ;
4 4000 1. VGS = 0 V
2. f = 1 MHz

2 2000
Crss

0 0
0 20 40 60 80 100 0 10 20 30 40
QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

160
3
10
140
1 us
120
2
10
ID, Drain Current [A]

ID, Drain Current [A]

10 us
100

Operation in This Area

100 us 80
1 is Limited by R DS(on)
10

1 ms 60
10 ms
0 DC 40
10

Single Pulse
20
TJ=Max rated
TC=25،‫ة‬
-1
10 0
10
-1 0
10 10
1
10
2
10
3
25 50 75 100 125 150

VDS, Drain-Source Voltage [V] TC, Case Temperature [،‫]ة‬

Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs.
Case Temperature
0
10

D=0.5

-1 0.2
10
ZthJC( C/W)

0.1
0.05
o

0.02
0.01
-2
10 single pulse

،‫ ط‬Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * ZthJC + TC
-3
10
-5 -4 -3 -2 -1 0
10 10 10 10 10 10
tP(s)

Fig.11 Transient Thermal Response

Curve

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 SFP075N150C2,SFB072N150C2
N-MOSFET 150V, 6.2mΩ, 120A

Test Circuit & Waveform

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 SFP075N150C2,SFB072N150C2
N-MOSFET 150V, 6.2mΩ, 120A

Package Outline: TO-220-3L

Dimensions In Millimeters Dimensions In Inches

Symbol
Min. Max. Min. Max.
A 4.30 4.80 0.169 0.189
A1 2.20 2.70 0.087 0.106
b 0.70 0.95 0.028 0.037
b1 1.10 1.50 0.043 0.059
c 0.40 0.65 0.016 0.026
c1 1.20 1.45 0.047 0.057
D 9.70 10.30 0.382 0.406
E 8.75 9.65 0.344 0.380
E1 12.50 13.10 0.492 0.516
e 2.540 Typ. 0.100 Typ.
e1 4.98 5.18 0.196 0.204
F 2.60 3.00 0.102 0.118
H 7.00 8.40 0.276 0.331
h 0 0.3 0 0.012
L 12.75 13.90 0.502 0.547
L1 2.85 3.40 0.112 0.134
V 6.700Ref. 0.264Ref.
Φ 3.50 3.80 0.138 0.150

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 SFP075N150C2,SFB072N150C2
N-MOSFET 150V, 6.2mΩ, 120A

Package Outline: TO-263

Dimensions In Millimeters Dimensions In Inches

Symbol
Min. Max. Min. Max.
A 4.30 4.80 0.169 0.189
A1 0.00 0.25 0.000 0.010
A2 2.35 2.70 0.093 0.106
b 0.70 0.94 0.028 0.037
b2 1.15 1.35 0.045 0.053
C 0.35 0.65 0.014 0.026
C1 1.20 1.40 0.047 0.055
D 8.40 9.40 0.331 0.370
D1 7.80 8.10 0.307 0.319
e 2.540 Typ. 0.100 Typ.
E 9.85 10.30 0.388 0.406
E1 7.00 8.50 0.276 0.335
H 15.00 15.70 0.591 0.618
L 2.30 2.80 0.091 0.110
L1 0.90 1.30 0.035 0.051
V 6.700Ref. 0.264Ref
L2 1.00 1.50 0.039 0.059

Rev1.0 Page 7
 SFP075N150C2,SFB072N150C2
N-MOSFET 150V, 6.2mΩ, 120A

Revision History
Revison Date Major changes
1.0 2021-04-07 Release of formal version.

Disclaimer
Unless otherwise specified in the datasheet, the product is designed and qulified as a standard commercial
product and is not intended for use in applications that require extraordinary levels of quality and reliability, such
as automotive, aviation/aerospace and life-support devices or systems.

Any and all semicondutor products have certain probability to fail or malfunction, which may result in personal
injury, death or property damage. Customer are solely responsible for providing adequate safe measures when
design their systems.

Scilicon Electric reserves the right to improve product design,function and reliability without notice.

Rev1.0 Page 8