STGW45HF60WD

45 A, 600 V ultra fast IGBT

Features
■ Improved Eoff at elevated temperature
■ Low CRES / CIES ratio (no cross-conduction
susceptibility)
■ Ultra fast soft recovery antiparallel diode

Applications 3
2
■ Welding 1
■ High frequency converters TO-247
■ Power factor correction

Description
The “HF” family is based on a new advanced
Figure 1. Internal schematic diagram
planar technology concept to yield an IGBT with
more stable switching performance (Eoff) versus
temperature, as well as lower conduction losses.
The “W” series is a subset of products tailored to
high switching frequency operation
(over 100 kHz).

Table 1. Device summary (1)

Order code Marking Package Packaging

GW45HF60WDA
STGW45HF60WD GW45HF60WDB TO-247 Tube
GW45HF60WDC
1. Collector-emitter saturation voltage is classified in group A, B and C, see Table 5: VCE(sat) classification.
STMicroelectronics reserves the right to ship from any group according to production availability.

April 2010 Doc ID 15593 Rev 3 1/12

www.st.com 12
Electrical ratings STGW45HF60WD

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0) 600 V

(1)
IC Continuous collector current at TC = 25 °C 70 A
(1)
IC Continuous collector current at TC = 100 °C 45 A
ICP(2) Pulsed collector current 150 A
(3)
ICL Turn-off latching current 80 A
VGE Gate-emitter voltage ± 20 V
IF Diode RMS forward current at TC = 25 °C 30 A
IFSM Surge not repetitive forward current tp= 10 ms sinusoidal 120 A
PTOT Total dissipation at TC = 25 °C 250 W
Tstg Storage temperature
– 55 to 150 °C
Tj Operating junction temperature
1. Calculated according to the iterative formula:

T j ( max ) – T C
I C ( T C ) = -------------------------------------------------------------------------------------------------------
R thj – c × V CE ( sat ) ( max ) ( T j ( max ), I C ( T C ) )

2. Pulse width limited by maximum junction temperature and turn-off within RBSOA
3. VCLAMP = 80% (VCES), VGE = 15 V, RG = 10 Ω, TJ = 150 °C

Table 3. Thermal data

Symbol Parameter Value Unit

Thermal resistance junction-case IGBT 0.5 °C/W

Rthj-case
Thermal resistance junction-case diode 1.5 °C/W
Rthj-amb Thermal resistance junction-ambient 50 °C/W

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STGW45HF60WD Electrical characteristics

2 Electrical characteristics

(TJ = 25 °C unless otherwise specified)

Table 4. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit

Collector-emitter
V(BR)CES breakdown voltage IC = 1 mA 600 V
(VGE = 0)
Collector-emitter saturation VGE = 15 V, IC= 30 A 2.5 V
VCE(sat)
voltage VGE = 15V, IC = 30 A,TJ= 125 °C 1.65 V
VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 3.75 5.75 V

Collector cut-off current VCE = 600 V 500 µA

ICES
(VGE = 0) VCE = 600 V, TJ = 125 °C 5 mA
Gate-emitter leakage
IGES VGE = ±20 V ± 100 nA
current (VCE = 0)

Table 5. VCE(sat) classification

Value
Symbol Parameter Group Unit
Min. Max.

A 1.68 1.92
Collector-emitter saturation voltage
VCE(sat) B 1.88 2.17 V
VGE = 15 V, IC= 30 A
C 2.13 2.50

Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

Input capacitance
Cies 2900 pF
Output capacitance VCE = 25 V, f = 1 MHz,
Coes - 260 - pF
Reverse transfer VGE = 0
Cres 55 pF
capacitance
Qg Total gate charge VCE = 400 V, IC = 30 A, 160 nC
Qge Gate-emitter charge VGE = 15 V, - 17 - nC
Qgc Gate-collector charge Figure 17 65 nC

Doc ID 15593 Rev 3 3/12

Electrical characteristics STGW45HF60WD

Table 7. Switching on/off (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VCC = 400 V, IC = 30 A 30 ns

tr Current rise time RG = 6.8 Ω, VGE = 15 V, - 12 - ns
(di/dt)on Turn-on current slope (Figure 16) 2600 A/µs
td(on) Turn-on delay time VCC = 400 V, IC = 30 A 30 ns
tr Current rise time RG = 6.8 Ω, VGE = 15 V, - 14 - ns
(di/dt)on Turn-on current slope TJ = 125 °C (Figure 16) 2200 A/µs
tr(Voff) Off voltage rise time VCC = 400 V, IC = 30 A, 30 ns
td(off) Turn-off delay time RG = 6.8 Ω, VGE = 15 V - 145 - ns
tf Current fall time (Figure 16) 50 ns
VCC = 400 V, IC = 30 A,
tr(Voff) Off voltage rise time 47 ns
RG = 6.8 Ω, VGE =15 V,
td(off) Turn-off delay time - 185 - ns
TJ = 125 °C
tf Current fall time 65 ns
(Figure 16)

Table 8. Switching energy (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

Eon(1) Turn-on switching losses VCC = 400 V, IC = 30 A 300 µJ

Eoff Turn-off switching losses RG = 6.8 Ω, VGE = 15 V, - 330 µJ
Ets Total switching losses (Figure 18) 630 µJ
Eon(1) Turn-on switching losses VCC = 400 V, IC = 30 A 550 µJ
Eoff Turn-off switching losses RG = 6.8 Ω, VGE = 15 V, - 550 800 µJ
Ets Total switching losses TJ = 125 °C (Figure 18) 1100 µJ
1. Eon is the tun-on losses when a typical diode is used in the test circuit in Figure 18. If the IGBT is offered
in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25 °C and 125 °C). Eon include diode recovery energy.

Table 9. Collector-emitter diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

IF = 30 A 2 2.5 V
VF Forward on-voltage -
IF = 30 A, TJ = 125 °C 1.65 V
trr Reverse recovery time IF = 30 A,VR = 50 V, 55 ns
Qrr Reverse recovery charge di/dt = 100 A/µs - 110 - nC
Irrm Reverse recovery current (see Figure 19) 3 A
trr Reverse recovery time IF = 30 A,VR = 50 V, 140 ns
Qrr Reverse recovery charge di/dt = 100 A/µs - 400 - nC
Irrm Reverse recovery current TJ =125 °C, (see Figure 19) 5.5 A

4/12 Doc ID 15593 Rev 3

STGW45HF60WD Electrical characteristics

2.1 Electrical characteristics (curves)

Figure 2. Output characteristics Figure 3. Transfer characteristics
IC200
(A) IC200
(A)
VGE = 15 V 10 V

9V
150 150
VCE = 10 V

100 8V 100

50 7V 50

6V
0 0
0 2 4 6 8 10
VCE (V) 0 2 4 6 8 VGE (V)
10

Figure 4. Normalized VCE(sat) vs. IC Figure 5. Normalized VCE(sat) vs. temperature

VCE(sat)
1.6 1.5
VCE(sat)
(norm) (norm)

1.4 VGE = 15 V
TJ = -50 ºC 1.3

1.2 IC = 80 A
TJ = 25 ºC
1.1
60 A
1 20 A

40 A
TJ = 150 ºC 0.9
0.8 10 A
30 A

0.6 0.7
VGE = 15 V IC = 5 A

0.4
0.5
0 20 40 60 80
IC (A) -50 0 50 100 TJ 150
(°C)

Figure 6. Normalized breakdown voltage vs. Figure 7. Normalized gate threshold voltage
temperature vs. temperature
1.1
VCES 1.2
VGE(th)
(norm) (norm)
1.1
1.05
1

1 0.9

0.8
IC = 1 mA
0.95 VGE = VCE
0.7 IC = 250 µA

0.9 0.6
-50 0 50 100 TJ 150
(°C) -50 0 50 100 TJ 150
(°C)

Doc ID 15593 Rev 3 5/12

Electrical characteristics STGW45HF60WD

Figure 8. Gate charge vs. gate-emitter Figure 9. Capacitance variations

voltage
VGE 20
(V) C5000
(pF)

f = 1 MHz
16 VCC = 400 V 4000
VGE = 0
IC = 30 A

12 Cies
3000

8 2000

4 1000
Coes

Cres
0 0
0 40 80 120 160 QG 200
(nC) 0 10 20 30 40 VCE (V)
50

Figure 10. Switching losses vs temperature Figure 11. Switching losses vs. gate
resistance
E 550
(µJ) E3500
(µJ)

500 3000

EOFF
450 2500
EOFF
EON 2000
400
EON

350 1500

VCE = 400 V, VGE = 15 V

VCE = 400 V, VGE = 15 V
300 IC = 30 A, RG =6.8 Ω 1000
IC = 30 A, TJ = 125 °C

250 500
25 50 75 100 TJ 125
(°C) 0 40 80 120 160 200 Rg240
(Ω)

Figure 12. Switching losses vs. collector Figure 13. Turn-off SOA
current
E1200
(µJ) 1000
IC (A)

1000 EOFF
100
800

600 10
EON
VGE = 15 V, RG = 6.8 Ω
400
TC = 150 °C
VCE = 400 V, VGE = 15 V 1
200 RG = 6.8 Ω, TJ = 125 °C

0 0.1
10 20 30 40 IC 50
(A) 1 10 100 1000
VCE (V)

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STGW45HF60WD Electrical characteristics

Figure 14. Diode forward on voltage Figure 15. Thermal impedance

!-V
) & !



4*   #
MAXIMUM VALUES



 4*   # 4*   #
TYPICAL VALUES MAXIMUM VALUES




        
6& 6

Doc ID 15593 Rev 3 7/12

Test circuits STGW45HF60WD

3 Test circuits

Figure 16. Test circuit for inductive load Figure 17. Gate charge test circuit
switching

AM01504v1 AM01505v1

Figure 18. Switching waveform Figure 19. Diode recovery time waveform

90% di/dt Qrr

VG 10%
IF trr
90%
ta tb
VCE Tr(Voff)
10%
Tcross t
90%
IRRM IRRM
IC Td(off)
10%
Td(on) Tf
Tr(Ion)
Toff
Ton

VF
di/dt

AM01506v1 AM01507v1

8/12 Doc ID 15593 Rev 3

STGW45HF60WD Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.

Doc ID 15593 Rev 3 9/12

Package mechanical data STGW45HF60WD

TO-247 Mechanical data

Dim. mm.
Min. Typ Max.
A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.45
L 14.20 14.80
L1 3.70 4.30
L2 18.50
øP 3.55 3.65
øR 4.50 5.50
S 5.50

10/12 Doc ID 15593 Rev 3

STGW45HF60WD Revision history

5 Revision history

Table 10. Document revision history

Date Revision Changes

16-Apr-2009 1 Initial release.

– Modified IC value on Test conditions Table 4
04-Aug-2009 2
– Modified RG value on Test conditions Table 7 and Table 8
– Document status promoted from preliminary data to datasheet
– Inserted VCE(sat) grouping A, B and C (see Table 5)
28-Apr-2010 3
– Inserted dynamic parameters on Table 5, Table 6 and Table 7
– Inserted Section 2.1: Electrical characteristics (curves)

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 STGW45HF60WD

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12/12 Doc ID 15593 Rev 3