AON7534

30V N-Channel MOSFET

General Description Product Summary

• Trench Power MOSFET technology VDS 30V

• Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A
• Low Gate Charge RDS(ON) (at VGS=10V) < 5mΩ
• High Current Capability
RDS(ON) (at VGS = 4.5V) < 8.5mΩ
• RoHS and Halogen-Free Compliant

Application 100% UIS Tested

• DC/DC Converters in Computing, Servers, and POL 100% Rg Tested
• Isolated DC/DC Converters in Telecom and Industrial

DFN 3x3 EP D
Top View Bottom View Top View

1 8

2 7

3 6

4 5
G

Pin 1 S

Orderable Part Number Package Type Form Minimum Order Quantity

AON7534 DFN 3x3 EP Tape & Reel 5000

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 30
ID
CurrentG TC=100°C 23 A
Pulsed Drain Current C IDM 120
Continuous Drain TA=25°C 20
IDSM A
Current TA=70°C 16
Avalanche Current C IAS 32 A
Avalanche energy L=0.05mH C EAS 26 mJ
VDS Spike 100ns VSPIKE 36 V
TC=25°C 23
PD W
Power Dissipation B TC=100°C 9
TA=25°C 3
PDSM W
Power Dissipation A TA=70°C 2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 30 40 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 60 75 °C/W
Maximum Junction-to-Case Steady-State RθJC 4.5 5.4 °C/W

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 AON7534

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.4 1.8 2.2 V
VGS=10V, ID=20A 4.1 5
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 5.6 6.8
VGS=4.5V, ID=20A 6.7 8.5 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 91 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous Current 28 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1037 1500 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 441 pF
Crss Reverse Transfer Capacitance 61 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.7 1.5 2.3 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 15.5 22 nC
Qg(4.5V) Total Gate Charge 6.8 10 nC
VGS=10V, VDS=15V, ID=20A
Qgs Gate Source Charge 3.0 nC
Qgd Gate Drain Charge 3.6 nC
tD(on) Turn-On DelayTime 5.5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75Ω, 3.3 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 18 ns
tf Turn-Off Fall Time 4.3 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 12.7 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 17.2 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO
IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AON7534

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 100
10V
4.5V VDS=5V
80 80
7V

5V 4V
60 60
ID (A)

125°C

ID(A)
40 40 25°C

20 VGS=3.0V 20

0 0
0 1 2 3 4 5 0 1 2 3 4 5 6

VDS (Volts) VGS(Volts)

Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

10 1.8

Normalized On-Resistance
VGS=4.5V
8 1.6 VGS=10V
ID=20A
Ω)
RDS(ON) (mΩ

6 1.4

4 1.2
VGS=10V
VGS=4.5V
2 1 ID=20A

0 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 200
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage (Note E) Figure 4: On-Resistance vs. Junction Temperature
(Note E)

15 1.0E+02
ID=20A
1.0E+01
40
1.0E+00
10
Ω)
RDS(ON) (mΩ

1.0E-01 125°C
IS (A)

125°C
1.0E-02
5 25°C
1.0E-03
25°C
1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2

VGS (Volts) VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AON7534

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1400
VDS=15V
ID=20A 1200
8 Ciss
1000

Capacitance (pF)
VGS (Volts)

6
800

600
4 Coss

400
2
200
Crss
0 0
0 5 10 15 20 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 200
TJ(Max)=150°C
100.0 10µs 160 TC=25°C
RDS(ON) 10µs
ID (Amps)

Power (W)

10.0
100µs 120 17
DC 1ms 5
1.0 10ms 2
80
10
TJ(Max)=150°C
0.1 40
TC=25°C

0.0 0
0.01 0.1 1 10 100
0.0001 0.001 0.01 0.1 1 10
VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased 18
Figure 10: Single Pulse Power Rating Junction-to-Case
Safe Operating Area (Note F) (Note F)

10
D=Ton/T In descending order
Zθ JC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RθJC=5.4°C/W 40
1

PD
0.1
Single Pulse
Ton
T

0.01
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AON7534

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 40
Power Dissipation (W)

30

Current rating ID(A)

20

20

10
10

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
TCASE (°C) TCASE (°C)
Figure 12: Power De-rating (Note F) Figure 13: Current De-rating (Note F)

TA=25°C

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
Zθ JA Normalized Transient

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=75°C/W 40

0.1

PD
0.01
Single Pulse
Ton
T
0.001
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)

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 AON7534

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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