Week 1: Assignment 1
Q1: The primary charge carriers in an N-MOSFET are ________, whereas the primary charge carriers
in a P-MOSFET are ________.
a. Electrons; holes
b. Holes; electrons
c. Negative ions; positive ions
d. Positive ions; negative ions
Ans: (a) Electrons; holes
Q2: The electrical equivalent component for a MOS structure is ______.
a. Resistor
b. Capacitor
c. Inductor
d. Switch
Ans: (b) Capacitor
Q3: The 𝐼𝐷 − 𝑉𝐺𝑆 characteristics of a MOSFET in the saturation region is ______.
a. Linear
b. Quadratic
c. Logarithmic
d. Parabolic
Ans: (b) Quadratic
Q4: Weak inversion can be defined as _____
a. 𝜙𝐹 < 𝜓𝑆 < 2𝜙𝐹
b. 𝜓𝑆 ≈ 2𝜙𝐹
c. 𝜓𝑆 = Δ𝜙 + 2𝜙𝐹
d. 𝜓𝑆 = 0
Ans: (a) 𝜙𝐹 < 𝜓𝑆 < 2𝜙𝐹
Q5: Which short channel effect causes an increase in the threshold voltage near the drain region?
a. Subthreshold current effect
b. Hot carrier effect
c. Velocity saturation
d. Drain induced barrier lowering
Ans: (d) Drain induced barrier lowering
Q6: In ______ region, a MOSFET works as a resistor, while in ______ region it works as a current
source.
a. Saturation; Linear
b. Cut off; Linear
c. Linear; Saturation
d. Cut off, Saturation
Ans: (c) Linear; Saturation
Q 7: In order to have zero substrate bias effect, The substrate of an p-channel enhancement mode
MOSFET should be _____.
a. Connected to the most negative bias.
b. Connected to the most positive bias.
c. Grounded
d. Floating
Ans: (b) Connected to the most positive bias.
Q8: Consider a N-MOSFET as shown in figure below. What will be the change in ID if VDD changes
𝑊
from 3.3 to 1.8V. Consider VTH = 0.5V and 𝜇𝑁 𝐶𝑂𝑋 = 100 µ𝐴/𝑉 2
𝐿
a. 4 µA
b. 3 µA
c. 2 µA
d. 1 µA
Ans: (c) 2 µA
Q9: The two types of device scaling are ______ and ______.
a. Constant field scaling; Constant length scaling
b. Constant field scaling; constant current scaling
c. Constant current scaling; Constant voltage scaling
d. Constant field scaling; constant voltage scaling
Ans: (d) constant field scaling; constant voltage scaling
Week 1: Assignment 1: Brief Explanation
Q1. Explanation:
The primary charge carriers in an N-MOSFET are electrons, whereas the primary charge carriers in a
P-MOSFET are holes.
Q2. Explanation:
The MOS structure acts a capacitor with a metal gate and semiconductor acting as parallel plate
conductors and oxide as a dielectric between them.
Q3. Explanation:
1 𝑊
In saturation, 𝐼𝐷 = 𝜇𝑁 𝐶𝑂𝑋 (𝑉𝐺𝑆 − 𝑉𝑇𝐻 )2
2 𝐿
The relation between 𝐼𝐷 and 𝑉𝐺𝑆 in the saturation region is quadratic
Q4. Explanation:
Weak inversion can be defined as 𝜙𝐹 < 𝜓𝑆 < 2𝜙𝐹
Q5. Explanation:
DIBL leads to a reduction in the barrier between the drain and channel regions, causing an increase in
threshold voltage
Q6. Explanation:
In linear region, a MOSFET works as a resistor, while in saturation region it works as a current
source.
Q7. Explanation:
The substrate of an p-channel enhancement mode MOSFET should be connected to the most positive
bias to reduce body effect and leakage.
Q8. Explanation:
Here VGS = 2.5 V
Overdrive voltage = VGS – VTH = 2.5 − 0.5 = 2V
Case 1: VDS = 3.3 V
VDS > VGS − VTH; Device is in saturation
1 𝑊 1
𝐼𝐷 = µ𝑁 𝐶𝑂𝑋 (𝑉𝐺𝑆 − 𝑉𝑇𝐻 )2 = × 100 × 10−6 × (2.5 − 0.5)2 = 200 µ𝐴
2 𝐿 2
Case 2: VDS = 1.8 V
VDS < VGS − VTH; Device is in linear region.
𝑊 1 2 1
𝐼𝐷 = µ𝑁 𝐶𝑂𝑋 ((𝑉𝐺𝑆 − 𝑉𝑇𝐻 )𝑉𝐷𝑆 − 𝑉𝐷𝑆 ) = 100 × 10−6 × ((2.5 − 0.5) × 1.8 − × 1.82 ) =
𝐿 2 2
= 198 µ𝐴
Change in current = 200 − 198 = 2µA
Q10. Explanation:
The two types of device scaling are constant field scaling and constant voltage scaling.
