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Module 1 - Introduction To CMOS Circuits

The document provides an introduction to Very Large Scale Integration (VLSI) and its historical context, detailing the evolution of integrated circuits from Small Scale Integration (SSI) to VLSI. It explains the functioning of MOS transistors, including nMOS and pMOS types, and their roles in CMOS technology, along with basic logic gate operations. Additionally, it covers concepts such as transmission gates, pass transistors, and tristate buffers in digital circuit design.

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0% found this document useful (0 votes)
18 views17 pages

Module 1 - Introduction To CMOS Circuits

The document provides an introduction to Very Large Scale Integration (VLSI) and its historical context, detailing the evolution of integrated circuits from Small Scale Integration (SSI) to VLSI. It explains the functioning of MOS transistors, including nMOS and pMOS types, and their roles in CMOS technology, along with basic logic gate operations. Additionally, it covers concepts such as transmission gates, pass transistors, and tristate buffers in digital circuit design.

Uploaded by

karan4002s12
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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MI -itiodu eti en VLST dugn £ tating

MoDULE -1
LNTRoDUCTCON

BRIEF HisTORY
’ The uhcle demain emputi ng enteed
Aomputing entud into a new aa
o elect kenic miniatuzation wth the iwertion trans to
n 1947. y Niliam B Shokley , Tohn Badeen,waltu HBrattan
ELectaonis today is chaact uised
Righ
today
aeliati tity
y

High apud
Lotw cest
Low powu disipation
’ VLSI
o! ati ng an Ic y cam bining vey
lavge nunba of thansistou en

Jack k:Lly dutt the IC in the


Bince then 4 qeneati ons Tc have evelved namely
* SSI - Smal Saale
nteqration : have thansiy tou in the
ade
Legee gotu ike 74 04 ete
MSL - Medium Saale Intqration; have sansis te in the
arder LOD- loDD . En:- M
ultiplene, centes
Lage Scale Integsation : have thansisteu pto
to, oUD. En: 8- ht paoceuou
* VLST -
teumed
Vey Lauge Saale Integation : 2cs byond 1980 wee
VLSE wth thansistos qriate Ehan io, oD.
En: l6- bit paOCes Gs eto.

-7 MooREs LAW : Akateu that the numbea ef tianscsteu cn a


chip detes eveay
’ DENNARD< ScALING : statu that au transcztou shuink, they beceme
fautu,) rans unme leu pewe and cheapu to nanuhactue
Nayana Ky Dept f ECE, sVzr
VLSI duiga 2tulig
MOS TRANSISTOR
Metal- Oude- Semiconductor CMOS) athtue ueated
dy supainpeag seveual Layu enducbing and inutating
lateuals. TAansiatee epuation s cntaolled Jy elect a felds
hene the nane
Fild E}eet Thanster (FET).
’ CMOS technology paovedes hwo kype
tran'tou -
trars's tou-nM0S 2 pMos
hos-setion and
aate ymbel Hhese tanstoy ae shoon belo
Souue Daain Souce DAain
Poysiicorn
sio
nt nt
pt pt
p- bype bcdy /buk n-bype kodylbulk
a) nMOs thasto
b) pMOS tranuste
nMOS canstution i
’ n p- bype ubetrata Cbody lbulk), two heavely
a
doped
Ag one vae fomed y di fuion . The kwD nt eg nt
bouice and din teninals. ove aapaent
’ A thin insulading dage o
hetween the over the p-subsbat
s0e and dain tnals
Jau
Aepesent
Pelylition is
the gate tuminal. depasited ovea Si0, layee. The paSi
’ Thu
body |bulk NMOS alway gunded.

PMOs censtuction :
’ In a n-type sulstat (body/bulk), twD
agons are
kuave'y dapud pt
and dain teminds.
’ Aboe the sulstate thue is
Aimila to nMOS
Si0, laye and Poly Selien (g)
The body /buk e pmos is cannected to pascteic potertiad (Von)
3
Nayana K, Dept of ECE, SVIT
VLSI dexqA 2 tatung
> The et weon he &ource and oan s called as charnel.
gion
Lenduction takes plae egion.
’ The gat s th centad input uhich alhed th low
vcuiien etween and d i i .

For an nMos tuansis toe Lhe Jody is swally qrounded, so


the p-n nctionu e thu sOce and uain o eseVese biased.

gote veltag u o(gounded) , thu nMOS transisto is


OFF and n0 veent tlous.
" I a poatkive votage is ayied do the gate , it eate an
electie eld tat attets heee electaons delo tho Si-sio)
inteulaa lah annet augcon)
" the pouitie vetuge i fethes ineaned
inceased aloe the
theheld vettage (Vt) an n-type channel is foamed between
seuse and dain cuating a path for eletnors do flow em
to o a i . nd tus ent can The tanss to is ON.

pMOs tanssto , the s held at e poutive vettag


kody
If the gat1 voltag is positive ) the pMOS trans's tor s OFF
and no vewent 7los.
applied to the gate, t wcate an
electic
nagate retag
fild that attacta fu beles Ctve chag) in the
vchannel.
I! the futh deceased delow the
negative velkage
thies hold velta (Ve) a P-ype chanel is fem ed wuating
ath tor hole do Blew uing in cment low. Trensstor kcN
nMOS transs boi tuns ON
OFF 6= O. PMOs t s t tuuns ON fo G=0 and tns
G= 1

AMOS: PMOS:
d

Nayana k, Dept.of ECE, SVIT 4


VLST deqa& tuing
conecli on and ehavie o Aeues nd paallel
thansistsiu i deprcted elow.

a) n o s sew'es

OFF OFF OFF ON

b) pMos sues a

b b b
ON OFF OFF OFF

C) n MOS pauallel
a

ON ON
OFF

d) pMOS pauallel |a
a

|b
ON ON ON OFF

7The posstble cutput leves in CMOS bucd on status o


s shour below
pil-up CpMos) and put - doun (nMos)
IPULL-UP OF|PULL- UP ON
PUL-DOWN OFF
PULL- DOWN ON X

Nayarak, Dept-of ECE, SVIT


CM0S L0GTC (Komplementasy Mos)
CMOS gate Iiar an nMOS pull- doun netwek to
Cornet the aut put do 0(GND) and pMos pull- up
netuok
do votect de out put to I(
Vop) The net works
Auch lhat
swangd
below
VDD

PMOS pMOS pases staong I cand weak o


nttwak

Inpub + -Output
nMOS
Pul-doun nMOs pases 6ticng 0 and ueakI
netwek

GND
CMOS netwonk
The nunbe tranCs bos n each netwak s
equal to tle
nunbu o inputs in the c i t .
CMOS AND opati an () coned n MOS wn seus
and PMOS n pavalle.
OR
epuat or (t) conneet nMOs
in parallel and
pMOS in
nMO S PMOS

AND (A8) OR(A+B) AND (A.B) OR (A+ B)


opertion operaion opeatien
SERIes PARALLEL PARALLEL S ERIES

Nayana k, Dept o ECE, S\I1


VLSI duiga tutig
) CMO0s CNVER TER
-’ The symbol) schem atc and thut talte an invte i shown
below
VbD
S

A PMOS
D
A
D

a)symbol n MOS
c) Tauth table

GND
b) shemati'c
b) shous the schemaic e! CNOS a'hvtei 0 NoT gau
constauct ed n MOS and ono pMOS tYul'ste.
’ Whun inpt A iu o , nMOs tans'stoe is OFF annd p MOS tarsUs tay
A ON , thus te otput Y is puled p to ', becose it is
cennet ed &houn belo
VDD

A=o ON

Y=
A=0
OFF

7 When input Au1 nMOS than'sto rs ON and


pMos
tranu' to thes the cutput pulled doun to o'
because to GND as &hor lelow
VDD

A=l

Y=0
A-

Nayona Ky, Dept. e ECE,sVIT


VLS
denga teutig
ii) NAND gat
’ 1he symbol, & hematie and tuth tate 2-1)P NAND
gat
adown delou

A A B
Y= AB PI P2

B D

Y=AB
a) symbol A

c) tauth tablo
N 2
s
VGND
b) shematic
Suith model
o) A= ,B=0 o) A = o, B
* When A=0, B=0 * hen A=0, Bl>
Pl,?2 ae ON
PI is oN, P2i's OFF
NI,N2 ae oFF,
Y NI s OFF, N2 i ON
Output Yùpuled p Y=
Output Yi pulled p
to VDD thsough prMos ko Vop thueugh pMas
trans'stor thcss tor.
GND

") A=1, B=

* hlhen A=l,B=0 =) * When A-), Bl)


PI is OFF, P2 is ON
jo Pl ) P2. ae oFE
NIiB CN, N2 IB DEF N, N2 au ON
Yelo
Dutput y u pulld up Qutput Y pulled down
to VDo
transte
thueugh p oS to GND thwaugh nMos
trans to
4ND

Nayana- k, Dept. o ECE, SVIT


VLSE duiga ktuting
iii) NoR GATE
Vpo

A Y= A+B A-
B

-L
ABY
A Yx A+B

iv) CoMPOUND 6ATE


Cambination 6ees and puale s u th t Aucte
y= AB+CD * y= (A+ B+c ).D
VDD
T Von

Y AB+ Co
-Y=A+ Bt).D

Y= APt CO is AND-OR- INVERT(A0T) Y=(A+ B+ C).D ç OR-AND-INVERT[OAI)

NoTE:
CMOS «ineuts , aay give cemplementay outputi
invatng autpud. To clt ain uncempleentay non-invatu rg cutpuly
an additiona invete is used at the autput
nMOS -Sr'es nMOS- pauatlel
A ND
operation pMOS- seies
pMOS- paralles

Nay ara K, Dept. o ECE, SVIT


VLSI desiqa tang
v) PA SS TRANSISTOR and TRANSMISSTON GATES

" PASS TRANSIS10R

hou
’ The stngth
signal
yiomate an ideal vottage strenge ngnal , tho
more cunent t can
The powe supply hails (VDp & GND) aue the sQWce o< the stronget
An nMOs tauns'ste putet suith uhen
thus nMos Pases STRONG 0 .
pauing a o

’ But the n Mos transsto


a | ' . The
nat a
pestet s t h uhrn
is leus thn Vpp
pauing
thus e nMOs
hugh veltage devel
Puses lEAK)
’A pMOS tar'st has opposcke dehaieL . It paue STRON6I
ond hEAK O
-’ When us ed inei'v duay these trorsLS tos aie knoun ay PASS Thanss
Enput Output
OMOS

WEAK I
J input Output
þMoS WEA Ko

STRONGI

TRANSMISSION GATE
A Parallel cembinatien nMOS and pMOS trsCs te u
called tiansmsion s shoun n below

Symbels o tarm'sier
gati
iput output
b
a

trnmu'sion
gate ques Jetth the cantiel input cq)
and t cemplemnt Cgb) This called clouble nail logic
kihen g= gb=O , beth nMOs RpMos awee ON )we say Th is ON.
klhen g=0, qb=l, both n MOs & p MOs ae DFF, we Say TG I8 OFF.
Nayra., Dept. o ECE ,SV1T lo
VLSL deuiqnk tsiag
’SLce TG wses both OMOS nd pMbs , Lt overcomes the preblern
(degaded olP:) A TG gevea beth STRONG and 'o
Input g=, gb=o Output
STRONG o
glgbs o
&TRONGI

CONTROL INPUT TG stats OUT PUT VALVE

g=l> gb=o output -unput (strong ol)


Ta is OEF output = z (highinpedana)

Vi) TRISTATES
’ Tcstates indiicates 3 states namaly O, I 2 z (tiyhimpedana)
TRISTATE BUFFER

En
En En A
4 En=l, output
Y=A
A X
|En al En =0, cutput c lating

TRISTATE INVERTER

and c e ' t tu'stte invete u shoun blow


En -Vbp VDD
A

A
A
En

" When En =0, En=l, both


enalo thanssteu ae DFF. -y-
thu cutput will float|Y=z|
En

"When En=l, En =D, beth


enalte tharscatos ae ON.
the cutput ul e VGND GND
GND
comphment of input|y- En0 En= |
Y=A
Nayana.K, Dept .o ÉCE, SVTT
VLSI desgn 2 tubrg
viii) MULTIPLEXERS
’A utiplenea aelects the eutput hom sevua input
Uased on the select signal
’A 2: MUX has 2 inputs CDO DI) , one selet ure Cs) and olp y.
It selec input Do when S=0 and DI Auhen
uhen S=
S= | as shown bele

DO Do DIY
DI
X
X Y= SD0 + SDI
X
X

Two tiusmu'sion
a sheun lelow. Thegatea
can le eanneted to a 2'|Mux
selet s and S enae only one Ta at atime as shouh

DO
S=0,3-I
DO
Do

-Y=Do -y- DI
S=i,3=o
DI
D) --
ix) SEQUENTTAL
VLST desaga Etesting
CIRCUITS i- hawe memoy , thi o<Ps
LATCHES Aoth unent and phevcaudapends
hputs,
-> latehes e level
taiggud. A D- lateh u'lt jhem
thomn 221 MUx
end two inveite shon un in a lelow. The
The nveutes at
Aike a eedback path
CLK

CLIC D
D
LAtCH
X Q(Previty
Stak )

a) D-lateh wag MUX b) ynbol and tuth tab


’ The MUx can e hut
g(> hem a pai o t aenumusion g ates
When lk =| the datch (enabed)
is tansparert and D
’ When ek= 0, the
ateh tho
uend the nvete
halds the ewent atate
fudback
I.e the eutput hemains andene telyl67)
prev'ou state
D D

LK

CL K
d) ceK=.,a-D e) cLK=0, =Q
'g ) D- Leth us T-4 (prevstato)

The-latdh s evel-senste leceLy e the tate the autpt is


oependant An the levee the clo ck as &hsun lelow.
’ This d a posctive devel-sens ve leth
cenet ony by hveting the contisl
ko the TG, the lotch beceuy negtir - level sensitie.
CLK
input D ç
changu in input
D heflect ed at the eutput only
Uk=| ) else t emans n
pev'eus state
13
Nayona K, Dept. of ECE, SVIT
Btauetuaal aepresertati on
A stauctural ape'ation speerties how component! ase
intecenncted to ' peuterm the Aequi'ned kunction
A tctunas desiption language modd s kattie dogi't kay
the
follag
Paxt gatname (npuct) ’outpt
thanscste dlain gat
-P£et
End.
*stuctwal speciicatian of an iwert
Vop
Past uv( in)’ ut PFeT
Nget cut ln -put
Pet aut in vdd
NFET
End
The st ine declasu a pat called inv
inv followed by
input lhere `in' ) The eutput Caut) a lhist of
the aymbel -’ appeas on the othesido f
Follewng thie
connetiony Tho
s a ist e taauistos
w'th thein bype k4
ldain= out, gte = atatemt descubes an n- taans Cs tor uth
* The 2nol toctement Vss/
duc
Jdaain p-transsto wuth
/sttual. dRptien
vddy
2-iput NAND VD
Pat nd2(a, b)’ out
i1
a
D
act a

N7t
Pt ut
Ves

Vdd
atil
b
Pfat 9t Vdd
Bnd
iateeediat sgaal i1 s ceclaed 8chg Keyuod graly
* stRuctual des aiptian o 2-in put AND gado neth capatane
and tan'ste szng
VDD

Part nand2 (a, b) ’ ot -dL2 2I b

N7t i4 a VsS - out

Nyet ut b

P7t vdd sze =2


50

Pyt ot Vdd sCze-2


S0
Capaewtanco a
capaeitata 100
Capacitanio cut 200
Brd

btuetusal de cuptien o taam'scon


t Con gate nMODEL
çb
Paut TG (a, c) cb)->b
d IP s
Net a Cb
Phet a ch b
End
4 sthuctual decwptiono p - o p CD-Lateh)
Paxt fipHlop (in, dd, dba, 4, qba)
Bignal o
qbay
TG Cin, id, id ba)’a
iny Ca) ’. qba
inv 'Cq ba)> q
TG Ca,ldbas, ld)’Q
End
Phyial aepacteutation
* The phycal apeecat on fo
a cau't i sed to delene how tly
pauti cular pat has to be orututed lo yield a peeutc stucuy
avd bharie

A bypical phy cat epntabon fon a traitoe woulol oist


kwo Aectangles ( difuson and poyeiton ) ovealapped to
fabicate tihe tan'tot.
Desgn ules 4peety the 'i each
wctange
The bacc Mos Lae
) n- dilhuac'on
2) p- dißbuscan
3) metal

4) Pely olicon
A tans'ste is femud utian dufucon and polyacliton ouetlap
Phycvcal 4ypmbot o nMOs

~polys

ndi


n-dill
Phyrcal ymbol o pmos
Phyical derwption f a CMOS inveale
metaf

FApoys
p-tans's te,
|Dot
J ut

| n-tunss to
VSS
t T r r u D vss
Smetal

Phyieal decuiption of traumsion gate peys


cbas ptransrse,

1eut metl

Dut

n- transi's ha

polysi
Phyaas Laye inteuacti on -a

P-daf poy si metalCAL)


n-dff Taaniiatr

X Trans¯stor Ok (c)
Poysi Thanssto eanusto
oK(c) OK(c)
CMOS nMOS

logic levelo Fully uteed k

Von

Rize and fall tin ae a ¥ Ri'se tana iu sloues than all tine
* Pouuer i'spatin
Amort 'o static pousu discate
Powe à diepated duwhg tiauie eutput o a yate = 0 along uu th
pouuer dpated d g teansin
* Packingdauucty
Reo'es 2N tans'stouy
N hput CMOS gats
* Pouw suppy
Voltag eaned to &uuth a Dependut
gate
A Pu- p to pull-doen catio
Rati'o obypcally /:|o 2:
Layoudt
Kagula dagut Depletin load and ditferet
tuansista sizes des not uppat
layeut agiauiy
}*Pawtu'ste passes stog O,
Paue eth <bnong o Ashog) Value
degradad

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