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 2SK1313(L)(S), 2SK1314(L)(S)
Silicon N-Channel MOS FET

ADE-208-1266 (Z)
1st. Edition
Mar. 2001

Application

High speed power switching

Features

• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter

Outline

LDPAK
4
4

1 2
1 3
2
3
D

1. Gate
2. Drain
3. Source
S
4. Drain
2SK1313(L)(S), 2SK1314(L)(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage 2SK1313 VDSS 450 V
2SK1314 500
Gate to source voltage VGSS ±30 V
Drain current ID 5 A
1
Drain peak current I D(pulse)* 20 A
Body to drain diode reverse drain current I DR 5 A
2
Channel dissipation Pch* 50 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C

2
 2SK1313(L)(S), 2SK1314(L)(S)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source 2SK1313 V(BR)DSS 450 — — V I D = 10 mA, VGS = 0
breakdown voltage 2SK1314 500
Gate to source breakdown V(BR)GSS ±30 — — V I G = ±100 µA, VDS = 0
voltage
Gate to source leak current I GSS — — ±10 µA VGS = ±25 V, V DS = 0
Zero gate voltage 2SK1313 I DSS — — 250 µA VDS = 360 V, VGS = 0
drain current 2SK1314 VDS = 400 V, VGS = 0
Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V I D = 1 mA, VDS = 10 V
Static Drain to source 2SK1313 RDS(on) — 1.0 1.4 Ω I D = 2.5 A, VGS = 10 V *1
on state resistance 2SK1314 — 1.2 1.5
Forward transfer admittance |yfs| 2.5 4.0 — S I D = 2.5 A, VDS = 10 V *1
Input capacitance Ciss — 640 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 160 — pF f = 1 MHz
Reverse transfer capacitance Crss — 20 — pF
Turn-on delay time t d(on) — 10 — ns I D = 2.5 A, VGS = 10 V,
Rise time tr — 25 — ns RL = 12 Ω
Turn-off delay time t d(off) — 50 — ns
Fall time tf — 30 — ns
Body to drain diode forward VDF — 0.95 — V I F = 5 A, VGS = 0
voltage
Body to drain diode reverse t rr — 300 — ns I F = 5 A, VGS = 0,
recovery time diF/dt = 100 A/µs
Note: 1. Pulse test

See characteristic curves of 2SK1155, 2SK1156.

3
2SK1313(L)(S), 2SK1314(L)(S)
Power vs. Temperature Derating
60

Channel Dissipation Pch (W)

40

20

0 50 100 150
Case Temperature TC (°C)

4
 2SK1313(L)(S), 2SK1314(L)(S)

Package Dimensions

As of January, 2001
Unit: mm

4.44 ± 0.2

(1.4)
10.2 ± 0.3 1.3 ± 0.15

+ 0.3

11.3 ± 0.5
– 0.5
8.6 ± 0.3
10.0
1.2 ± 0.2 2.59 ± 0.2

11.0 ± 0.5
1.27 ± 0.2
0.86 +– 0.1
0.2

0.76 ± 0.1

2.54 ± 0.5 2.54 ± 0.5 0.4 ± 0.1

Hitachi Code LDPAK (L)

JEDEC —
EIAJ —
Mass (reference value) 1.4 g

5
2SK1313(L)(S), 2SK1314(L)(S)

As of January, 2001
Unit: mm

4.44 ± 0.2 7.8

10.2 ± 0.3

(1.4)
1.3 ± 0.15 6.6

1.7
0.3
10.0 +– 0.5
8.6 ± 0.3

7.0
7.8
(1.5)
(1.5)

0.1 +– 0.1
0.2
2.2
1.27 ± 0.2
1.2 ± 0.2 0.4 ± 0.1
0.86 +– 0.1
0.2
0.3
3.0 +– 0.5

2.54 ± 0.5 2.54 ± 0.5

Hitachi Code LDPAK (S)-(1)

JEDEC —
EIAJ —
Mass (reference value) 1.3 g

6
 2SK1313(L)(S), 2SK1314(L)(S)

As of January, 2001
Unit: mm

4.44 ± 0.2 7.8

10.2 ± 0.3

(1.4)
1.3 ± 0.2 6.6

1.7
0.3
10.0 +– 0.5
8.6 ± 0.3

7.0
7.8
(1.5)
(1.5)

0.1 +– 0.1
0.2
2.2
1.27 ± 0.2

0.4 ± 0.1
1.2 ± 0.2 0.86 +– 0.1
0.2
0.3
5.0 +– 0.5

2.54 ± 0.5 2.54 ± 0.5

Hitachi Code LDPAK (S)-(2)

JEDEC —
EIAJ —
Mass (reference value) 1.35 g

7
2SK1313(L)(S), 2SK1314(L)(S)

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

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