Assignment #1
ENGG 202; Basic Electronics
Q.1: What is the concentration of holes in Si crystals having donor
concentration of 1.4*1024 /m3 when the intrinsic carrier concentration
is 1.4*1018 /m3? Find the ratio of electron to hole concentration.
Q.2: A copper wire of 2mm diameter with conductivity of 5.8*107 S/m
and electron mobility of 0.00032m2/ V-s is subjected to an electric field
of 20mV/m. Find
(i) The charge density of free electrons
(ii) The current density
(iii) The current flowing in the wire
(iv) The electron drift velocity
Q.3: A 100Ω resistor is to be made at room temperature in a rectangular
silicon bar of 1 cm in length and 1mm2 in cross sectional area by doping
it appropriately with phosphorous atoms. If the electron mobility in
silicon at room temperature be 1350 cm2/V-second. Calculate the
dopant density needed to achieve this. Neglect the insignificant
contribution by the intrinsic carriers.
Q.4: The mobility of free electrons and holes in pure germanium are
3800 and 1800 cm2/V-s respectively. The corresponding values for
pure silicon are 1300 and 500 cm2/V-s respectively. Determine the
values of intrinsic conductivity for both. Assume n i = 2.5*1013 cm-3
germanium and ni= 1.5* 1010 cm-3 for silicon at room temperature.
Q.5: In an n type semiconductor, the fermi level is 0.24 eV below the
conduction band at a room temperature of 300K. If the temperature is
increased to 350K, determine the new position of the fermi level.
Q.6: What is a knee voltage and what is its significance.
Q.7: A germanium diode draws 40mA with a forward bias of 0.25V.
The junction is at room temperature of 2930K. Calculate the reverse
saturation current of the diode.
Q.8: Why silicon is preferred over all semiconductors. Give a
comparision chart for S, Ge and GaAs.
Q.9: A 10V regulated dc power supply has a regulation of 0.002. Find
the magnitude of variation in output voltage.
Q.10: Find the resistivity of intrinsic Si and when it is doped with a
pentavalent impurity of one impurity atom for each 60 million Si atoms.
Given no. of Si atoms (N) = 4.5 x 1028 m3, intrinsic carrier
concentration ni= 1.5 x 1016 /m3, mobility of holes = 0.048 m2 /Vs,
mobility of electron = 0.135 m2 /Vs.
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