ST 2SC2901

NPN Silicon Epitaxial Planar Transistor

for general purpose amplifier and high speed
switching applications.

The transistor is subdivided into two groups L and

K, according to its DC current gain.

On special request, these transistors can be

manufactured in different pin configurations.

1. Emitter 2. Base 3. Collector

TO-92 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter Symbol Value Unit
Collector Base Voltage VCBO 40 V
Collector Emitter Voltage VCES 40 V
Collector Emitter Voltage VCEO 15 V
Emitter Base Voltage VEBO 5 V
Collector Current IC 200 mA
Collector Current (10 µs pulse) ICP 500 mA
Power Dissipation Ptot 600 mW
Junction Temperature Tj 150 O
C
Storage Temperature Range Tstg - 55 to + 150 O
C

Characteristics at Ta = 25 OC
Parameter Symbol Min. Typ. Max. Unit
DC Current Gain
at VCE = 1 V, IC = 10 mA Current Gain Group L hFE 40 - 120 -
K hFE 100 - 200 -
Collector Base Cutoff Current
ICBO - - 0.1 µA
at VCB = 20 V
Emitter Base Cutoff Current
IEBO - - 0.1 µA
at VEB = 3 V
Collector Emitter Saturation Voltage
VCE(sat) - 0.15 0.25 V
at IC = 10 mA, IB = 1 mA
Base Emitter Saturation Voltage
VBE(sat) - 0.8 0.85 V
at IC = 10 mA, IB = 1 mA
Turn-on Time
ton - 8 12 ns
at VCC = 3 V, IC = 10 mA, IB1 = 3 mA, -VBE = 1.5 V
Storage Time
tstg - 6 13 ns
at IC = 10 mA, IB1 = -IB2 = 10 mA
Turn-off Time
toff - 12 18 ns
at VCC = 3 V, IC = 10 mA, IB1 = 3 mA, -IB2 = 1.5 mA
Gain Bandwidth Product
fT 500 750 - MHz
at VCE = 10 V, -IE = 10 mA, f = 100 MHz
Output Capacitance
Cob - 1.8 4 pF
at VCB = 5 V, f = 1 MHz

Dated : 07/08/2003
ST 2SC2901

Collector current vs. Collector current vs.

collector em itter voltage collector em itter voltage
200 20
25 20 10 180 160

8 140
160 16 120
6
4 100
120 12
Ic (mA)

Ic (mA)
80
2
80 8
1 60

40
40 4
I B =0.5m A

0 IB=20 A
0 0
0.4 0.8 1.2 1.6 2.0 4 8 12 16 20
VCE (V) VCE (V)

Total power dissipation vs.

ambient temperature DC current gain vs. collector current
800
1000
Total power dissipation, mW

VCE=1V

600

25 C Ta=75 C
400
100
hFE

200 -25 C

10
0 50 100 150 200 0.1 1 10 100
Ambient temperature Ta ( C)
I C, mA

Input and output capacitance

Base and collector saturation
vs. reverse voltage
voltage vs. collector current
3 30
IC/IB=10 f=1MHz
IE=0(Cob)
1 VBE(sat) 10 IC=0(Cib)
VCE(sat), V
VBE(sat), V

Ta=75 C -25 C 25 C
Cob, pF
Cib, pF

Cib
VCE(sat) Cob

0.1 Ta=75 C 25 C 1
-25 C

0.01 0.1
0.1 1 10 100 0.1 1 10 100

I C, mA VCB, V
VEB , V

Gain bandwidth product

vs. emitter current
Switching time vs. collector current
10000
VCE=10V 100
VCC=10V
I C/I B=10
I B1 = -I B2
VBB = -5V

1000
fT, (MHz)

tsw, ns

tr
10
tf
100
tstg td

10 1
-0.1 -1 -10 -100 2 10 100 200

I E, mA I C, mA

Dated : 07/08/2003