ON Semiconductor

1 DRAIN

JFET Switching

2N5555

3
GATE

NChannel Depletion

2 SOURCE

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

DrainSource Voltage

VDS

25

Vdc

DrainGate Voltage

VDG

25

Vdc

GateSource Voltage

VGS

25

Vdc

Forward Gate Current

IGF

10

mAdc

Total Device Dissipation @ TC = 25C

Derate above 25C

PD

350
2.8

mW
mW/C

Junction Temperature Range

TJ

65 to +150

Storage Temperature Range

Tstg

65 to +150

1
2

CASE 2911, STYLE 5

TO92 (TO226AA)

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

V(BR)GSS

25

Vdc

Gate Reverse Current (VGS = 15 Vdc, VDS = 0)

IGSS

1.0

nAdc

Drain Cutoff Current (VDS = 12 Vdc, VGS = 10 V)

Drain Cutoff Current (VDS = 12 Vdc, VGS = 10 V, TA = 100C)

ID(off)

10
2.0

nAdc
Adc

IDSS

15

mAdc

VGS(f)

1.0

Vdc

DrainSource OnVoltage
(ID = 7.0 mAdc, VGS = 0)

VDS(on)

1.5

Vdc

Static DrainSource On Resistance

(ID = 0.1 mAdc, VGS = 0)

rDS(on)

150

Ohms

rds(on)

150

Ohms

Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)

Ciss

5.0

pF

Reverse Transfer Capacitance

(VDS = 0, VGS = 10 Vdc, f = 1.0 MHz)

Crss

1.2

pF

(V
( DD = 10 Vdc,, ID(on) = 7.0 mAdc,,
0 VGS(off) = 10
10 Vdc)
Vd ) (See
(S Figure
Fi
VGS(on) = 0,
1)

td(on)

5.0

ns

tr

5.0

ns

( DD = 10 Vdc,, ID(on) = 7.0 mAdc,,

(V
VGS(on) = 0,
0 VGS(off) = 10
10 Vdc)
Vd ) (See
(S Figure
Fi
1)

td(off)

15

ns

tf

10

ns

OFF CHARACTERISTICS
GateSource Breakdown Voltage (IG = 10 Adc, VDS = 0)

ON CHARACTERISTICS
ZeroGateVoltage Drain Current(1)
(VDS = 15 Vdc, VGS = 0)
GateSource Forward Voltage
(IG(f) = 1.0 mAdc, VDS = 0)

1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 3.0%.

SMALLSIGNAL CHARACTERISTICS
SmallSignal DrainSource ON Resistance
(VGS = 0, ID = 0, f = 1.0 kHz)

SWITCHING CHARACTERISTICS
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time

Semiconductor Components Industries, LLC, 2001

November, 2001 Rev. 3

Publication Order Number:

2N5555/D

2N5555
PULSE WIDTH
VDD
1.0 k
PULSE
GENERATOR
(50 OHMS)

90%
50 OHM
COAXIAL
CABLE

10 k

50 OHM COAXIAL CABLE

1.0 k

TEKTRONIX
567
SAMPLING
SCOPE

INPUT

VGS(on)

90%

50%
10%

50%
10%
INPUT PULSE
RISE TIME

VGS(off)

INPUT PULSE
FALL TIME

Rin =
50 OHMS

50

td(on)

OUTPUT

INPUT PULSE
RISE TIME < 1.0 ns
FALL TIME < 1.0 ns
NOMINAL VALUE OF ON" PULSE WIDTH = 400 ns
DUTY CYCLE 1.0%
GENERATOR SOURCE IMPEDANCE = 50 OHMS

td(off)
10%

10%
90%

90%

tr

tf

Figure 1. Switching Times Test Circuit

COMMON SOURCE CHARACTERISTICS

30
20
bis @ IDSS

10
7.0
5.0
3.0

gis @ IDSS

2.0

gis @ 0.25 IDSS

1.0
0.7
0.5
0.3

grs , REVERSE TRANSADMITTANCE (mmhos)

brs , REVERSE SUSCEPTANCE (mmhos)

gis, INPUT CONDUCTANCE (mmhos)

bis, INPUT SUSCEPTANCE (mmhos)

ADMITTANCE PARAMETERS
(VDS = 15 Vdc, Tchannel = 25C)

bis @ 0.25 IDSS

10

20

30

50 70 100
200 300
f, FREQUENCY (MHz)

5.0
3.0
2.0

0.25 IDSS

0.3
0.2

0.1
0.07
0.05

500 700 1000

brs @ IDSS

1.0
0.7
0.5

grs @ IDSS, 0.25 IDSS

10

20

50 70 100
200 300
f, FREQUENCY (MHz)

500 700 100

10

10
7.0
5.0

gfs @ IDSS
gfs @ 0.25 IDSS

3.0
2.0
1.0
0.7
0.5
0.3
0.2

30

Figure 3. Reverse Transfer Admittance (yrs)

gos, OUTPUT ADMITTANCE (mhos)

bos, OUTPUT SUSCEPTANCE (mhos)

gfs, FORWARD TRANSCONDUCTANCE (mmhos)

|b fs|, FORWARD SUSCEPTANCE (mmhos)

Figure 2. Input Admittance (yis)

20

|bfs| @ IDSS

20

30

50 70 100
200 300
f, FREQUENCY (MHz)

bos @ IDSS and 0.25 IDSS

2.0
1.0
0.5
0.2

gos @ IDSS

0.1

0.05

|bfs| @ 0.25 IDSS

10

5.0

gos @ 0.25 IDSS

0.02

500 700 1000

0.01

10

Figure 4. Forward Transadmittance (yfs)

20

30

50 70 100
200 300
f, FREQUENCY (MHz)

500 700 100

Figure 5. Output Admittance (yos)

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2

2N5555
COMMON SOURCE CHARACTERISTICS
SPARAMETERS
(VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz)
30

20

10

0
1.0

40

350
100

340

400

0.8

ID = IDSS

0.6

90

800

50

350

340

330
320

700
800

700

300

60

290

70

280

80

900

0.3

ID = IDSS, 0.25 IDSS

310

900

800

0.2

300

700

600

600

500
600

80

310

0
0.4

500

400

0.7

70

40

10

300
300

60

320

20

200
200

0.9

30

ID = 0.25 IDSS

100
50

330

0.1

500

290

400
300

280

0.0

200

270

90

100

260

100

260

110

250

110

250

120

240

120

240

130

230

130

230

140

220

140

220

900

150

160

30

20

170

180

190

200

210

150

160

340

330

30

20

Figure 6. S11s
10

350

0.6

0.5

60
900

70
80
90
100
110
120

800
700
600
500

0.4
900

800
700
600

500

0.3
100

400

400

0.3

ID = 0.25 IDSS

300

200

0.4

100

0.5

300
ID = IDSS

200

170

180

190

200

210

Figure 7. S12s

40

50

270

100

130

10

0
350
340
330
100 200
I
=
0.25
IDSS
D
300
1.0
400
100 200
500
300
600
400
700
0.9
500
800
600
ID = IDSS
700
900
800
900
0.8

320

40

310

50

300

60

290

70

280

80

270

90

270

260

100

260

250

110

250

240

120

240

230

130

230

220

140

220

0.7

320

310

300
290
280

0.6

0.6

140
150

160

170

180

190

200

210

150

Figure 8. S21s

160

170

180

190

Figure 9. S22s
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3

200

210

2N5555
COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS
(VDG = 15 Vdc, Tchannel = 25C)

10
7.0
5.0

grg , REVERSE TRANSADMITTANCE (mmhos)

brg , REVERSE SUSCEPTANCE (mmhos)

gig, INPUT CONDUCTANCE (mmhos)

big, INPUT SUSCEPTANCE (mmhos)

20

gig @ IDSS

3.0

grg @ 0.25 IDSS

2.0
1.0
0.7
0.5

big @ IDSS

0.3
0.2

10

20

30

big @ 0.25 IDSS

50 70 100
200 300
f, FREQUENCY (MHz)

0.5
0.3

0.1
0.07
0.05
0.25 IDSS

0.03
0.02
0.01

0.007
0.005

500 700 1000

brg @ IDSS

0.2

gig @ IDSS, 0.25 IDSS

10

10
7.0
5.0

gfg @ IDSS

3.0

gfg @ 0.25 IDSS

2.0
1.0
0.7
0.5
bfg @ IDSS

0.3

brg @ 0.25 IDSS

0.2
0.1

10

20

30

50 70 100
200 300
f, FREQUENCY (MHz)

30

50 70 100
200 300
f, FREQUENCY (MHz)

500 700 1000

Figure 11. Reverse Transfer Admittance (yrg)

gog, OUTPUT ADMITTANCE (mmhos)

bog, OUTPUT SUSCEPTANCE (mmhos)

gfg , FORWARD TRANSCONDUCTANCE (mmhos)

bfg , FORWARD SUSCEPTANCE (mmhos)

Figure 10. Input Admittance (yig)

20

500 700 1000

1.0
0.7
0.5

bog @ IDSS, 0.25 IDSS

0.3
0.2
0.1
0.07
0.05

gog @ IDSS

0.03
0.02
0.01

gog @ 0.25 IDSS

10

Figure 12. Forward Transfer Admittance (yfg)

20

30

50 70 100
200 300
f, FREQUENCY (MHz)

500 700 1000

Figure 13. Output Admittance (yog)

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2N5555
COMMON GATE CHARACTERISTICS
SPARAMETERS
(VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz)
30

20

10

350

340

0.7

40

100
100

200

200

0.5

300

300

60
ID = IDSS

0.4

70

400

700

400
500

310

50

300

60

290

70

280

80

600

900

270

90

100

260

100

110

250

110

120

240

120

130

230

130

140

220
160

170

180

190

20

10

350

200

50

320

300

0.01

100
600
ID = IDSS
700

290
280

0.0

270

500
600
700
800

800

260

ID = 0.25 IDSS

250

0.01

240

0.02

230

900

0.03
220

0.04
150

160

170

180

190

200

210

340

330

Figure 15. S12g

340

330

30

20

10

40

320

0
1.5
1.0
100

100

0.4

330

0.02

140

210

0.5

40

340

310

Figure 14. S11g

30

350

0.04

900

150

800

900

90

40

10

600

800

0.3

320

20

0.03
500

700

80

30

ID = 0.25 IDSS

0.6
50

330

350
300
200

400

320

700

600

800

0.9

ID = IDSS

500
900

310

50

300

60

290

70

280

80

270

90

270

260

100

260

110

250

110

250

120

240

120

240

130

230

130

230

140

220

140

220

100
0.3

60

0.2

70
80

ID = 0.25 IDSS

0.1

900

90

900

100

150

160

170

180

190

200

210

ID = IDSS, 0.25 IDSS

0.8

Figure 16. S21g

300

0.7

290
280

0.6

150

160

170

180

190

Figure 17. S22g

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5

310

200

210

2N5555
PACKAGE DIMENSIONS
TO92 (TO226AA)
CASE 2911
ISSUE AL

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.

R
P
L
SEATING
PLANE

DIM
A
B
C
D
G
H
J
K
L
N
P
R
V

X X
G

H
V

C
SECTION XX

N
N
STYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE

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6

INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---

MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---

2N5555

Notes

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2N5555

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are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be
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2N5555/D

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