Chapter 8 Protecting Diodes, Transistors, and Thyristors 288

8.1 The non-polarised R-C snubber

The series R-C snubber is the simplest switching aid circuit and is connected in parallel to the device
being aided. It is characterized by having low series inductance and a high transient current rating.
These requirements necessitate carbon type resistors for low inductance, below a few watts, and metal
film resistors at higher powers. The high current and low inductance requirements are also provided by

8
using metallised, polypropylene capacitors with high dv/dt ratings of typically hundreds of V/µs.
Theoretically a purely capacitive snubber would achieve the required protection objectives, but series
resistance is added to decrease the current magnitude when the capacitor is discharging and to damp
any voltage oscillation by dissipating the oscillatory energy generated at turn-off when an over-voltage
tends to occur.

L
O
A

Protecting Diodes, Transistors, s

D

and Thyristors
t
r
a
y s
n
u
b
b
e
r

All power switching devices attain better switching performance if some form of switching aid circuit,
called snubber, is employed. Snubber activation may be either passive or active which involves extra
power switches. Only passive snubbers, which are based on passive electrical components, are
considered in this chapter, while active snubbers are considered in Chapter 9. Fundamentally, the
MOSFET and IGBT do not require switching aid circuits, but circuit imperfections, such as stray Figure 8.1. MOSFET drain to source R-C snubber protection:
inductance and diode recovery, can necessitate the need for some form of switch snubber protection. (a) MOSFET circuit showing stray inductance, Ls, and R-C protection circuit and
Protection in the form of switching aid circuits performs three main functions: (b) R-C snubber optimal design curves.

• Divert switching losses from the switch thereby allowing a lower operating temperature, or
higher electrical operating conditions for a given junction temperature.
• Prevent transient electrical stressing that may exceed I-V ratings thereby causing device failure. 8.1.1 R-C switching aid circuit for the GCT, the MOSFET, and the diode
• Reduce conducted and radiated electromagnetic interference In figure 8.1a, at switch turn-off, stray inductance Ls unclamped by the load freewheel diode, Df,
produces an over voltage Vˆ on the MOSFET or IGBT. The energy associated with the inductor can be
Every semiconductor switching device can benefit from switching protection circuits, but extra circuit absorbed in the shown drain to source connected R-C circuit, thereby containing the voltage overshoot
component costs and physical constraints may dictate otherwise. to a controlled safe level. Such an R-C snubber circuit is used extensively in thyristor circuits, 8.1.2, for
The bipolar diode suffers from reverse recovery current and voltage snap which induces high but short dv/dt protection, but in such cases the initial current in the stray inductance is assumed zero. Here the
duration circuit voltages. These voltage transients may cause interference to the associated circuit and initial inductor current is equal to the maximum load current magnitude, Iℓ. The design curves in figure
to nearby equipment. A simple series non-polarised R-C circuit connected in parallel to the stressed or 8.1b allow selection of R and C values based on the maximum voltage overshoot Vˆ and an initial current
offending device is often used to help suppress the voltage oscillation at diode turn-off. Such a factor χ, defined in figure 8.1b. The C and R values are given by
suppression circuit can be effectively used on simple mains rectifying circuits when rectification causes
C = Ls (I A / χVs )2 (F) (8.1)
conducted and radiated interference.
Although the MOSFET and IGBT can usually be reliably and safely operated without external protection R = 2 ξ Vs χ / I A (Ω) (8.2)
circuitry, stringent EMC application emission restrictions may dictate the use of snubbers. In specific If the R-C circuit time constant, τ = RC, is significantly less than the MOSFET voltage rise and fall times,
applications, the IGBT is extensively current derated as its operating frequency increases. In order to trv and tfv, at reset (when the capacitor is discharged through the resistor and switch at turned on), a
attain better device current utilization, at higher frequencies, various forms of switching aid circuits can portion of the capacitor energy ½CVs 2 , is dissipated in the switch, as well as in R. The switch appears as
be used to divert switching losses from the stressed semiconductor switch. a variable resistor in series with the R-C snubber. Under these conditions (tfv and trv > RC) the resistor
Generally, all thyristor devices benefit from a polarised turn-on switching aid circuit, which is based on a power loss is approximately by
series connected inductor that is active at thyristor turn-on. Such an inductive turn-on snubber is PR = PR on + PR off
obligatory for the high-power GCT and GTO thyristor. In order to fully utilise the GTO thyristor, it is usually τ τ
used in conjunction with a parallel-connected capacitive turn-off snubber, which decreases device = P + (P + PL 0 ) (W) (8.3)
stressing during the turn-off transient. Triacs and rectifier grade SCRs and diodes tend to use a simple τ + t fv C 0 τ + t rv C 0
R-C snubber connected in parallel to the switch to reduce interference. The design procedure of the R- where PC 0 = ½CVs f s and PL 0 = ½Ls I f
2 2
A s
C snubber for a diode is different to that for the R-C snubber design for a thyristor device, because the otherwise (tfv and trv < RC) the resistor losses are the energy to charge and discharge the snubber
protection objectives and initial conditions are different. In the case of a thyristor or rectifier diode, the capacitor, plus the energy stored in the stray inductance, that is 2PC0 + PL0.
objective is to control both the voltage rise at turn-off and recovery overshoot effects. For the fast Note the total losses are independent of snubber resistance. The snubber resistor determines the time
recovery diode or any high-speed switch, the principal objectives are to control the voltage overshoot over which the energy is dissipated, not the amount of energy dissipated.
magnitude at diode snap recovery or at turn-off respectively, which are both exacerbated because of When the R-C snubber is employed across a fast recovery diode, the peak reverse recovery current is
stray circuit inductance carrying current. used for Iℓ in the design procedure.

BWW
289 Power Electronics Chapter 8 Protecting Diodes, Transistors, and Thyristors 290

Example 8.1: R-C snubber design for MOSFETs

A MOSFET switches a 40 A inductive load on a 200 V dc rail, at 10 kHz. The unclamped drain circuit
inductance is 20 nH and the MOSFET voltage rise and fall times are both 100 ns. Design a suitable R-C
snubber if the MOSFET voltage overshoot is to be restricted to 240 V (that is, 40V overshoot, viz. 20%).

Solution

From figure 8.1b, for 20 per cent voltage overshoot

R-C snubber
ξ = 1.02, χ = 0.52
Using equations (8.1) and (8.2) for evaluating C and R respectively,
2
 40A  Figure 8.2. Thyristor (triac) ac circuit with an R-C snubber circuit.
C = Ls (I A / χVs )2 = 20nH   = 3nF
 0.52×200V 
0.52×200V
R = 2 ξ Vs χ / I A = 2 × 1.02 × = 5.3Ω
40A
Use C = 3.3 nF, 450V dc, metallised polypropylene capacitor and R = 5.6 Ω.

Since the RC time constant, 18.5ns, is short compared with the MOSFET voltage transient
times, 100ns, the resistor power rating is given by equation (8.3).
PC 0 = ½CV s2f s = ½×3.3nF ×2002×10kHz=2.64W
PL 0 = ½Ls I A2f s = ½×20nH × 402 × 10kHz =0.16W
18.5ns 18.5ns
PR = ×2.64W + × (2.64W + 0.16W) = 0.85W
100ns + 18.5ns 100ns + 18.5ns
Use a 5.6 Ω, 1 W carbon composition resistor for low self inductance, with a working voltage
of at least 250V dc. Parallel connection of two 12Ω ½W, carbon composition resistors may be Figure 8.3. Non-polarised R-C snubber equivalent circuit
necessary since resistance values below 10Ω are uncommon. showing the second-order output response eo to a step input voltage es.
The MOSFET switching losses are 2WC 0 + PL 0 − 0.85W = 4.95W higher than those incurred by
switching un-aided at 200V and 40A. From equations 6.9 and 6.10, the switching losses would
be at least 8W, (4W+4W).
♣

8.1.2 Non-polarised R-C snubber circuit for a converter grade thyristor and a triac
The snubber circuit for a low switching frequency thyristor is an anode-to-cathode parallel connected R-
C series circuit for off-state voltage transient suppression. Thyristor series inductance may be
necessary (forming a turn-on snubber) to control anode di/dt at turn-on. This inductive snubber is
essential for the GCT and the GTO thyristor, and will be considered in section 8.3.3.

Off-state dv/dt suppression snubber

Thyristors, other than the GCT and the GTO thyristor, normally employ a simple R-C snubber circuit as
shown in figure 8.2. The purpose of the R-C snubber circuit is not primarily to reduce turn-off switching
loss but rather to prevent false triggering (turn on) from applied or reapplied anode dv/dt, when the 1
switch is in a forward voltage blocking off-state.
Any thyristor rate of rise of forward-voltage anode dv/dt produces a central junction charging current
which may cause the thyristor to inadvertently turn on. The critical dv/dt is defined as the minimum value
of dv/dt which will cause switching from the off-state to the on-state. In applications as shown in figure
8.2, an occasional false turn-on is generally not harmful to the triac or the load, since the device and the
(0.265, 0.81)
load only have to survive the surge associated with a half-a-cycle of the ac mains voltage supply.
In other applications, such as reversible converters, a false dv/dt turn-on may prove catastrophic. A
correctly designed snubber circuit is therefore essential to control the rate of rise of anode voltage.
The action of this R-C snubber circuit relies on the presence of inductance in the main current path. The
inductance may be stray, from transformer leakage or a supply, or deliberately introduced. Zero inductor
current is the initial condition, since the device is in the off-state when experiencing the anode positive
dv/dt. Analysis is based on the response of the R-C portion of an L-C-R circuit with a step input voltage
and zero initial inductor current. Figure 8.3 shows an L-C-R circuit with a step input voltage and the
typical resultant voltage across the SCR or R-C components. The circuit resistor R damps (by dissipating
power) any oscillation and limits the capacitor discharge current through the SCR at subsequent SCR ∧
Figure 8.4. Variation of snubber peak voltage, eo, maximum deo /dt, S ; and peak current, Ip;
device turn-on initiated from the gate. The snubber resistor dissipates power even if the triac is not
switching, since the snubber capacitor voltage alternates, tracking the ac voltage supply. with L-C-R damping factor ξ.
291 Power Electronics Chapter 8 Protecting Diodes, Transistors, and Thyristors 292

Based on the snubber∧ circuit analysis presented in the appendix in section 8.5 at the end of this chapter, Variations of the basic R-C snubber circuit are shown in figure 8.5. These circuits use extra components
the maximum dv/dt, S , which is usually specified for a given device, seen by the SCR for a step input of in an attempt to control SCR initial di/dt arising from snubber discharge through RL at thyristor turn-on.
magnitude es, is given by Figure 8.5a has the disadvantage that three series devices (C-Rs-D) provide turn-off protection. The
∧ parasitic series inductance can be decreased by using a turn-off snubber with two series components
S = es R / L (V/s) (8.4)
(C-D), as shown in figure 8.5b.
for a damping factor of ξ > ½. That is, after rearranging, the snubber resistance is given by An R-C snubber can be used across a diode in order to control voltage overshoot at diode snap-off
∧
R = L S / es (ohms) (8.5) during reverse recovery, as a result of stray circuit inductance, as considered in 8.1.1.
The R-C snubber can provide decoupling and transient overvoltage protection on both ac and dc supply
while the snubber capacitance is given by rails, although other forms of R-C snubber circuit may be more applicable, specifically the soft voltage
4 ξ 2e s clamp.
C = ∧ (F) (8.6)
RS
and the peak snubber current is approximated by
e 2ξ
Iˆ = s (A) for ξ < 1. (8.7)
R 1 − ξ2
Figure 8.4 shows the variation of the different normalised design factors, with damping factor ξ.

Example 8.2: Non-polarised R-C snubber design for a converter grade thyristor

Design an R-C snubber for the SCRs in a circuit where the SCRs experience an induced dv/dt due to a
complementary SCR turning on, given D

• peak switching voltage, es = 200 V

• operating frequency, fs = 1 kHz
• dv/dt limit, S = 200 V/µs. D
Assume C
• stray circuit L = 10 µH
• 22 per cent voltage overshoot across the SCR
• an L-C-R snubber is appropriate.

Solution

From equation (8.5) the snubber resistance is given by Figure 8.5. Polarised variations of the basic thyristor R-C snubber:
∧
R = L S / es (a) Rs << RL and (b) transistor-type R-C-D snubber, Rs = 0.

10µH×200V/µs
= = 10Ω
200V
8.2 The soft voltage clamp
At turn-on the additional anode current from the snubber capacitor will be 200V/10Ω = 20A, which
decays exponentially to zero, with a 1.8µs (10Ω×180nF) RC time constant.
A primary function of the basic R-C snubber is to suppress voltage overshoot levels. The R-C snubber
∧ commences its clamping action from zero volts even though the objective is to clamp any switch over-
Figure 8.4 shows the R-C snubber circuit overshoot voltage magnitude, e 0 / e s for a range of
voltage to the supply voltage level, Vs. Any clamping action below Vs involves an unnecessary transfer
damping factors ξ. The normal range of damping factors is between ½ and 1. Thus from figure 8.4, of energy. The soft voltage clamp reduces energy involvement since it commences clamping action
allowing 22 per cent overshoot, implies ξ = 0.65. From equation (8.6) once the switch voltage has reached the supply voltage Vs, and the voltage overshoot commences.
4 ξ 2e s 4 × (0.65)2 × 200V The basic polarised R-C-D soft voltage clamp is shown in figure 8.6a, with resistor R parasitic
C = ∧ =
RS 10Ω × 200 × 106 inductance, LR, and stray or deliberately introduced unclamped inductance L, shown.
= 180 nF (preferred value) rated at >244 V peak. The voltage clamp functions at switch turn-off once the switch voltage exceeds Vs. The capacitor
voltage never falls below the supply rail voltage Vs. Due to the stored energy in L, the capacitor C
From equation (8.7) the peak snubber current during the applied dv/dt is charges above the rail voltage and R limits current magnitudes as the excess capacitor charge
e 2ξ discharges through R in to Vs. All the energy stored in L, ½LI m2 , is dissipated in R. The inductor current iL
Iˆ = s and capacitor voltage Vc waveforms are shown in figure 8.6b.
R 1 − ξ2
At switch turn-on, the diode D blocks, preventing discharge of C which remains charged to Vs.
200V 2×0.65 The energy drawn from the supply Vs as the capacitor overcharges, is returned to the supply as the
= = 34 A
10Ω 1-0.652 capacitor discharges through R into the supply. The net effect is that only the energy in L, ½LI m2 , is
The 10 ohm snubber resistor losses are given by dissipated in R.
P10 Ω = C e 02 f s
Analysis is simplified if the resistor inductance LR is assumed zero. The inductor current decreases from
= 180×10-9 ×2442 ×1×103 = 11W Im to 0 according to
Resistor current flows to both charge (maximum 34A) and discharge (initially 20A) the capacitor. i L (ωt ) = I m ωo ω e −αt cos(ωt − φ ) (A) (8.8)

The necessary 10Ω, 11W resistor must have low inductance, hence two 22 Ω, 7W, 500V dc working α = ½RC (s) ωo = 1 / LC (rad/s)
where
voltage, metal oxide film resistors can be parallel connected to achieve the necessary ratings. ω = ωo − α
2 2
(rad/s) φ = tan-1 α (rad)
ω
♣
293 Power Electronics Chapter 8 Protecting Diodes, Transistors, and Thyristors 294

Figure 8.6. Soft voltage polarised clamp:

(a) circuit diagram and (b) turn-on inductor current, IL, and capacitor voltage, Vc, at switch turn-off.

The inductor current reaches zero, termed the current reset time, tir, in time Figure 8.7. Voltage clamp capacitor normalised peak over-voltage, VCp , versus damping factor, ξ, for
'

t ir = (½π + φ ) / ω (s) (8.9) different resistor normalised inductances, L’, and voltage and current normalised settling times, t vr' ,
∨
which must be shorter than the switch minimum off-time, t off . The capacitor charges from Vs according t ir' = Vcp / {I m L / C } , t vr' = t rv / ω0 , t ir' = t ir / ω0 .
to
I m -αt
VC (ωt ) = V s + e sin ωt (V) (8.10) Solution
ωC
The maximum capacitor voltage, hence maximum switch voltage, occurs for large R
i. Assuming all the inductor energy is transferred to the clamp capacitor, before any discharge through
L R occurs, then from equation (8.11), for a 50 V capacitor voltage rise
VˆC = V s + I m (V) (8.11)
C
50 = I m L
Once the current in L has reduced to zero the capacitor discharges to Vs exponentially, with a time C
2
constant RC. that is, C = 5 µH/(50V/25A) = 1.25 µF (use 1.2 µF, rated at, at least 50V above the dc supply Vs).
The practical R-C circuit, which includes the stray inductance LR, must be over-damped, that is
LR From equation (8.9), for R = 0, the energy transfer time (from L to C) is
R >2 (Ω ) (8.12)
C t ir = ½π LC = ½π 5µH×1.25µF = 4µs
The capacitor voltage reset time tvr is the time for the capacitor to discharge to within 5 per cent of Vs, as which, as required, is less than the switch minimum off-time of 5 µs.
shown in figure 8.6b. If the maximum operating frequency is 50 kHz, the capacitor must discharge in 20 - 4 = 16 µs.
Assuming five RC time constants for capacitor discharge
The stray inductance LR increases the peak capacitor voltage and increases the voltage reset time. 5 × RC = 16µs
Design of the voltage clamp, including the effects of LR, is possible with the aid of figure 8.7. Design is R = 16µs/(5×1.2µF) = 2 2 3 Ω (use 2.4Ω)
based on specifying the maximum voltage overshoot, Vcp and minimizing ∨
the voltage reset time, tvr, The resistor power rating is
which limits the upper switching frequency, fs, where f s ≤ 1 / t vr such that t off ≥ t ir .
PR = ½LI m2 f s = ½×5µH×252×50kHz = 78W
Obviously with a 2.4 Ω discharge resistor and 50V overshoot, discharge current would flow as the
Example 8.3: Soft voltage clamp design capacitor charges above the voltage rail. A smaller value of C could be used. A more accurate estimate
of C and R values is possible, as follows.
A 5 µH inductor turn-on snubber is used to control diode reverse recovery current and switch turn-on
loss, as shown in figure 8.6a. The maximum collector current is 25 A, while the switch minimum off-time ii. (a) LR = 0, that is L′ = LR /L = 0
is 5 µs and the maximum operating frequency is 50 kHz. From figure 8.7, for the minimum voltage reset time, as indicated
Vcp' = 0.46, t ir' = 2.90, t rv' = 4.34, and ξ = 0.70
i. Assuming an independent L-C resonant transfer from L to C and a subsequent R-C
discharge cycle, calculate soft voltage clamp R and C requirements. From Vcp' = Vcp / I m L
C
ii. Use figure 8.7 to determine the voltage clamp requirements if the discharge (reset)
resistor inductance LR is 0.46 = 50V/25A 5µH gives C = 0.27µF
(a) 0 C
(b) 1.0µH. L , L 1 5µ H
From ξ=1 R= 1 = = 3.2Ω
2R C 2ξ C 2×0.7 0.27µF
In each case, the maximum switch overshoot is to be restricted to 50 V. (Use 3.3 Ω, 78 W)
295 Power Electronics Chapter 8 Protecting Diodes, Transistors, and Thyristors 296

The reset times are given by ƒ A series inductive turn-on snubber is essential for the GCT and the GTO thyristor in order to
t vr = t vr' LC = 4.34 ×1.16 = 5µs (<20µs) control the anode initial di/dt current to safe levels at switch turn-on. In large area thyristor
devices, the inductor controlled current increase at turn-on, allows sufficient time for the silicon
t ir = t ir' LC = 2.9 ×1.16 = 3.4µs (<5µs) active area to spread uniformly so as to conduct safely the prospective load current. Special
It is seen that smaller capacitance (0.27 µF vs 1.2 µF) can be employed if simultaneous L-C transfer and thyristor gate structures such as the amplifying gate, as shown in figure 3.24, allow initial anode
R-C discharge are accounted for. The stray inductance of the resistor discharge path has been di/dt values of up to 1000 A/us. Use of an inductive turn-on snubber with the MOSFET and the
neglected. Any inductance decreases the effectiveness of the R-C discharge. Larger C than 0.27 µF and IGBT is limited but may be used because of freewheel diode imposed limitations rather than an
R < 3.3Ω are needed, as is now shown. intrinsic need by the switch.
ƒ The shunt capacitive turn-off snubber is used extensively across the GTO thyristor. The R-D-C
ii. (b) LR = 1µH, that is, L′ = LR /L = 0.2 circuit is necessary to ensure that GTO turn-off occurs at a low anode-to-cathode voltage,
In figure 8.7, for a minimum voltage reset time, ξ = 0.7, Vcp' = 0.54 when the L′ = 0.2 curve is used. The preventing excessive power loss at the central GTO junction during reverse recovery. Larger area
normalised reset times are unchanged, that is t ir' = 2.9 and t vr' = 4.34. GTOs employ 1 to 8 µF in an R-D-C turn-off snubber and at high voltages and frequencies the
Using the same procedure as in part ii b associated losses, ½C sV s2f s , tend to be high. To reduce this loss, GTOs with an increased SOA,
0.54 = 50V/25A 5µH gives C = 0.37µF (use 0.39µF) namely GCTs, for use without a turn-off snubber are available. These devices under utilise their
C voltage and current density capabilities as compared with when used with a turn-off snubber.
R = 1 L = 1 5µH = 2.6Ω (use 2.7Ω, 78W)
2ξ C 2×0.7 0.39µF While the switching performance of IGBTs and MOSFETs can be enhanced by using the turn-off snubber,
Since resistor inductance has been accounted for, parallel connection of four 10Ω, 25W wire-wound it is not a prerequisite for safe, reliable switch operation.
aluminium clad resistors can be used.
t vr = 4.34×1.4 = 6µs (< 20µs)
t ir = 2.90×1.4 = 4µs (< 5µs)
Note that circuit supply voltage Vs is not a necessary design parameter, other than to specify the Df
capacitor absolute dc voltage rating. This supply independence is expected since in ac circuit analysis,
as is applicable here during the transient snubber operational period, dc voltage sources are shorted. Df
♣
Vind
Vg Vg
8.3 Polarised switching-aid circuits
Optimal gate drive electrical conditions minimize collector (or drain or anode) switching times, thus
minimizing switch electrical stresses and power losses. Proper gate drive techniques greatly enhance T T
Vsw
the switching robustness and reliability of a power switching device. Switching-aid circuits, commonly
called snubber circuits, can be employed to further reduce device switching stresses and losses.
Optimal gate drive conditions minimise the amount of snubbering needed.

Vs Vs

Im Im Figure 8.9. Basic switching-aid circuits comprising:

(a) a parallel capacitor for current shunting at switch turn-off and (b) a series inductor for supporting
voltage, thus limiting the rate of rise of principal current at turn-on.

8.3.1 The polarised turn-off snubber circuit - assuming a linear current fall

Figure 8.8. Idealised collector (anode) switching waveforms for an inductive load. Figure 8.10 shows a complete turn-off snubber circuit comprising a capacitor-diode plus resistor
combination across the anode-to-cathode/collector-to-emitter terminals of the switching device. At switch
turn-off, load current is diverted into the snubber capacitor C via the diode D, while the switch principal
During both the switch-on and the switch-off transition intervals, for an inductive load as considered in
current decreases. The anode/collector voltage is clamped to the capacitor voltage, which is initially
chapter 6.2, an instant exists when the switch simultaneously supports the supply voltage Vs and
zero. The larger the capacitor, the slower the anode/collector voltage rises for a given load current and,
conducts the full load current Im, as shown in figure 8.8. The gate drive conditions cannot alter this peak
most importantly, turn-off occurs without a condition of simultaneous supply voltage and maximum load
power loss but can vary the duration of the switching periods (ton and toff). From chapter 6, for an
current (Vs, Im). Figure 8.11 shows the anode/collector turn-off waveforms for different magnitudes of
inductive load, the switching losses, W, dissipated as heat in the switch, are given by
snubber capacitance. The GTO/IGBT tail current has been neglected, thus the switching device is
for turn-on: Won = ½V s I mt on (J) (8.13)
analysed without any tail current. For clarity, the terminology to be henceforth used, refers to an IGBT,
for turn-off: Woff = ½V s I mt off (J) (8.14) viz., collector, emitter, and gate. Circuit operational explanations equally apply to thyristors.
In order to reduce switching losses, two snubber circuits can be employed on a power switching device,
one operational during switch turn-on, the other effective during turn-off. In the case of the turn-off Figure 8.11a shows turn-off waveforms for a switch without a snubber, where it has been assumed that
snubber, energy (current) is diverted from the switch turning off into a parallel capacitor as shown in the collector voltage rise time is short compared with the collector current fall time, which is given
figure 8.9a thus the capacitor controls the voltage rise. The turn-on snubber utilises an inductor in series by i c (t ) = I m (1 − t / t fi ) . For low capacitance values, the snubber capacitor (whence collector voltage)
with the collector as shown in figure 8.9b in order to support part of the dc voltage supply as the collector may charge to the rail voltage before the collector current has fallen to zero, as seen in figure 8.11b. For
(anode) voltage falls. The inductor therefore controls the rate of rise of collector (anode) current during larger capacitance, the collector current reaches zero before the capacitor (whence collector voltage)
the collector voltage fall time. For both snubbers, the I-V SOA trajectory is modified to be within that has charged to the rail voltage level, as shown in figure 8.11c.
area shown in figure 6.8.
297 Power Electronics Chapter 8 Protecting Diodes, Transistors, and Thyristors 298

For analysis, the collector voltage rise time for an unaided switch is assumed zero. The device switch-off
energy losses without a snubber, as shown in figure 8.11a, are given by
W = ½Vs I mt fi (J) (8.15)

Df With a snubber circuit, switch losses are decreased as shown in figure 8.11d, but snubber (resistor)
losses are incurred. After turn-off the capacitor is charged to the rail voltage. This stored energy, ½C sVs 2 ,
is subsequently dissipated as heat in the snubber circuit resistor at subsequent switch turn-on, when an
R-C discharge current flows. If the snubber RC time constant is significantly shorter than the switch
voltage fall time at turn-on, the capacitor energy dissipated in the resistor is less than ½C sVs 2 and switch
losses are increased as considered in 8.1.1. A range of capacitance values exists where the total losses
- snubber plus switch - are less than those losses incurred if the same device is switched unaided, when
Vg losses as given by equation (8.14) result. Two distinct snubber design cases exist, depending on
capacitance magnitude, as indicated by figures 8.11b and 8.11c. The two possibilities and the
associated circuit voltage and current waveforms in each case are shown in detail in figure 8.12. The
waveforms are based on satisfying Kirchhoff’s voltage and current laws for each case.

Vs
(a) (b)
τ τ
Figure 8.10. Practical capacitive turn-off snubber =k ≤1 =k ≥1
t fi vDf Im t fi
showing capacitor charging and discharging paths during device switching.
iDf

Vs Vs
ic
Im Im
io = icap
vce
2I mVs Cs
Im - Cs Vce
Vs Ic Ic
t fi
Im
vo = ½I m t f i /Cs
vo

Vce io
on off switch on off
voltage and current
t t
trv tfi tfi

Vs Im Im Im Im
Im
Ic Ic

increasing C IDf
IDf Kirchhoff’s
current law

Icap Im = iDf + ic + icap Icap

t t

Vs
Im
Vs Vs
Vs Vs
vDf = vload
increasing C vDf = vload
Vsw

Kirchhoff’s
increasing C voltage law vce = vcap
vc× ic vce = vcap
(d)
Vs = vload + vcap

t t t
τ τ

Figure 8.11. Switch turn-off waveforms: Figure 8.12. Switch turn-off waveforms satisfying Kirchhoff’s laws:
(a) unaided turn-off; (b) turn off with small snubber capacitance; (a) turn-off with small snubber capacitance and (b) turn-off with large snubber capacitance.
(c) turn-off with large snubber capacitance; (d) and switch power losses.
299 Power Electronics Chapter 8 Protecting Diodes, Transistors, and Thyristors 300

From i = C dv/dt, the snubber capacitor charges according to vc(t) = Vs (t / τ)2, to Vs before the collector (d) A minimum total loss (switch plus reset resistor) condition exists. When k = ⅔ the total losses
current has reached zero, thus the switch losses are given by are only 5/9 those of an unaided switch. The snubber capacitance for this optimal case is given by
Wt = ½Vs I mt fi (1 − 4 3 k + ½k 2 ) (J) (8.16) I t
C s = 2 m fi (F) (8.18)
9 Vs
for k ≤ 1, where k = τ/tfi, as defined in figures 8.12a and 8.13.
(e) Losses are usually minimised at the switch maximum loss condition, that is maximum load
Alternatively, with larger capacitance, if the snubber capacitor charges to vo < Vs, according to vc(t) = vo (t current Im. At lower currents, capacitor charging time increases, as is the output voltage distortion.
/ tfi)2 , thus not charging to Vs until after the collector current reaches zero, that is k ≥ 1, then the switch
(f) Snubbers not only reduce total losses, but because the loss is distributed between the switch
losses are given by and resistor, more effective heat dispersion can be achieved.
½Vs I mt fi (g) High switch current occurs at turn-on, incorporating the load current Im, the snubber capacitor
Wt = 6 ( 2k − 1) (J) (8.17)

for k ≥ 1 as defined in figures 8.12b and 8.13. Initially the capacitor voltage increase is quadratic, then
( )
exponential discharge Vs R 1 − e − CR , and any freewheel diode reverse recovery current.
t

when the collector current reaches zero, the load current charges the capacitor, hence the voltage The capacitor energy ½C sV s is removed at turn-on and is exponentially dissipated mainly in the snubber
2

increase becomes linear. circuit resistor R. The power rating of this resistor is independent of resistance but dependent on the
maximum switching frequency. The reset resistor power rating is given by
These losses, normalised with respect to the unaided switch losses given by equation (8.15), are plotted
in figure 8.13. The switch and capacitor (subsequently resistor) components contributing to the total PRs = ½C sV s2f s (W) (8.19)
losses are also shown. A number of points arise concerning turn-off snubbers and snubber losses.
Two factors specify the snubber discharge circuit resistance value.
(a) Because of current tailing, voltage overshoot, and the assumption that the voltage rise
time trv is insignificantly short, practical unaided switch losses, equation (8.14), are • The snubber circuit RC time constant period must ensure that after turn-on the capacitor
∨
approximately twice those indicated by equation (8.15). discharges before the next switch turn-off is initiated. If t on is the minimum switch on-time,
∨
(b) As the snubber capacitance increases, that is, k increases, the switch loss is then t on =5Rs C s , is sufficient to ensure the correct snubber circuit initial conditions, namely,
progressively reduced but at the expense of increased snubber associated loss. zero capacitor voltage.
(c) If k ≤ 1.41 the total losses (switch and reset resistor) are less than those for an unaided • The resistor initial current at capacitor discharge is Vs / Rs. This component is added to the
switch. In the practical case k ≤ 2.70 would yield the same condition. load current at switch turn-on, hence adding to the turn-on stresses. The maximum collector
current rating must not be exceeded. In order to reduce the initial discharge current, a low
valued inductor can be added in series with the resistor, (or a wire-wound resistor used), thus
producing an overdamped L-C-R discharge current oscillation at turn-on. Note that the resistor
power loss in equation (8.19) is independent of resistance value. The resistance determines
the period of time over which the capacitor stored energy is dissipated at switch turn-on.

Figure 8.14. The collector I-V trajectory at turn-off with a capacitive switching-aid circuit.

As a result of utilising a capacitive turn-off snubber, the collector trajectory across the SOA is modified
as shown in figure 8.14. It is seen that the undesired unaided condition of simultaneous supply voltage
Vs and load current Im is avoided. Typical trajectory conditions for a turn-off snubbered device are shown
for three situations, depending on the relative magnitudes of tfi and τ (the magnitude of Cs). A brief
mathematical derivation describing the turn-off switching-aid circuit action is presented in the appendix
Figure 8.13. Loss components for a switch at turn-off when employing a capacitance-type snubber in section 8.6 at the end of this chapter.
and assuming the collector current falls according to i c = I m (1 − t / t fi ).
301 Power Electronics Chapter 8 Protecting Diodes, Transistors, and Thyristors 302

Table 8.1: Normalised switching loss components at turn-off with a cosinusoidal current fall of half period T

see
Table 8.1
Example 8.4: Capacitive turn-off snubber design

A 600V, 100A machine field winding is switched at 10kHz. In maintaining a constant field current, the
switch operates with an on-state duty cycle ranging between 5% and 95% (5% ≤ δ ≤ 95%) and has a
turn-off linear current fall time of 100ns, that is, i c (t ) = 100 × (1 − t / 100ns) .
i. Estimate the turn-off loss in the switch.
ii. Design a capacitive turn-off snubber using the dimensionally correct identity i = Cdv/dt.
What is the capacitor voltage when the collector current reaches zero.
iii. Design a capacitive turn-off snubber such that the switch voltage reaches 600V at the
same time the conducting current reaches zero.
Figure 8.15. Loss components for a switch at switch-off when employing a capacitance-type snubber In each snubber case calculate the percentage decrease in un-aided switch turn-off power dissipation.
and assuming a collector fall current according to ic = ½Im{1 + cos(πt/T)}.
Solution
i. The switch un-aided turn-off losses are given by equation (8.14). The turn-off time is greater than the
current fall time (since the voltage rise time trv has been neglected), thus the turn-off switching losses will
8.3.2 The turn-off snubber circuit - assuming a cosinusoidal current fall be greater than
Woff = ½V s I mt off = ½ × 600V × 100A × 100ns = 3mJ
As an alternative to a linear current fall at turn-off, it may be more realistic to assume that the current
falls cosinusoidally according to Poff = Woff × f s = 3mJ × 10kHz = 30W
i c (t ) = ½I m (1 + cos π t / T ) (A) (8.20) ii. Use of the equation i = Cdv/dt results in a switch voltage that reaches the rail voltage after the collector
for 0 ≤ t ≤ T, as shown in figure 8.15. current has fallen to zero. From k = ½ + C sV s / I mt fi in figure 8.13, k = 3/2 satisfies the dimensionally
correct capacitor charging equation. Substitution into i = Cdv/dt gives the snubber capacitance
As with a linear current fall, two cases exist. 600V
100A = C
100ns
(i) τ ≤ T (k ≤ 1), that is the snubber capacitor charges to Vs in time τ, before the that is C = 16 2 3 nF
switch current reaches zero, at time T. Use an 18nF, 1000V dc, metallised polypropylene, high dv/dt capacitor.
(ii) τ ≥ T (k ≥ 1), that is the snubber capacitor charges to the supply Vs after the The snubber capacitor discharges at switch turn-on, and must discharge during the switch minimum on-
switch current has fallen to zero. time. That is
∨

These two cases are shown in figure 8.15 where k is defined as τ /T. Using a similar analysis as t on = 5 CR
presented in the appendix (section 8.6), expressions can be derived for switch and snubber resistor 5% of 1 / 10kHz = 5 × R × 18nF
losses. These and the total losses for each case are summarised in table 8.1. that is R = 55.5Ω Use 56Ω
The discharge resistor power rating is independent of resistance and is given by
Figure 8.15 shows that a minimum total loss occurs, namely
P56 Ω = ½CVs 2f s
Wtotal = 0.41 × ½V s I mT at k = 0.62
= ½ × 18nF × 600V 2 × 10kHz = 32.4W Use 50W.
I mT
when C s = 0.16 (F) (8.21) The resistor can be wire-wound, the internal inductance of which reduces the initial peak current when
Vs the capacitor discharges at switch turn-on. The maximum discharge current into the switch during reset,
which is added to the 100A load current and any diode reverse recover current, is
For tfi < 0.85T, a cosinusoidal fall current predicts lower total losses than a linear fall current, with losses I 56 Ω = V s / R = 600V / 56Ω = 10.7A
shown in figure 8.13.
303 Power Electronics Chapter 8 Protecting Diodes, Transistors, and Thyristors 304

which decays exponential to zero in five time constants, 5µs. The peak switch current (neglecting The necessary reset resistance to discharge the 10nF capacitor in 5µs is
freewheel diode recovery) is 100A+10.7A=110.7A, at turn-on. 5µs = 5 × R × 10nF
that is R = 100Ω
At switch turn-off, when the switch current reduces to zero, the snubber capacitor has charged to a The power dissipated in the reset resistor is
voltage less than the 600V rail voltage, specifically
P100 Ω = ½CVs 2f s
1
v 0 = ∫ i cap dt = ½ × 10nF × 600V 2 × 10kHz = 18W
C
100 ns Use a 100Ω, 25W, wire-wound, 600V dc withstand voltage, metal clad resistor.
1  t 
16 2 3 nF ∫0  dt = 300V
= 100A ×  (277V with 18nF) The resistance determines the initial current magnitude and the period over which the capacitor energy
 100ns  is dissipated. The resistance does not determine the amount of energy dissipated. The capacitor
The switch turn-off losses are reduced from 30W to exponentially discharges with an initial current of 600V/100Ω = 6A, which adds to the 100A load current
100ns 100ns
 t   t 
2
at switch turn-on. The peak switch current is therefore 100A+6A = 106A, at turn-on.
Poff = f s ∫0
i cv ce dt = f s ∫
0
I m  1-
 100 ns 
× v0   dt
 100ns 
The energy dissipated in the switch at turn-off is reduced from 30W when un-aided to
100ns 100ns 2
 t   t 
Poff = f s ∫ i cv c dt = f s ∫ I m  1- ×Vs   dt
100ns 2
 t   t 
= fs ∫ 100A  1-  × 300V  100ns  dt = 2.5W ( 2.3W with 18nF ) 0 0  100 ns   100ns 
0  100 ns    100ns 2
 t   t 
= f s ∫ 100A  1-  × 600V  100ns  dt = 5W (using 8 3 nF)
1

The total turn-off losses (switch plus snubber resistor) are 2.5W+32.4W=34.9W, which is more than the 0  100 ns   
30W for the unaided switch. Since the voltage rise time has been neglected in calculating the un-aided The total losses (switch plus snubber resistor) with a turn-off snubber are 5W+18W =23W, which is less
losses, 34.9W would be expected to be less than the practical un-aided switch losses. The switch losses than the 30W for the unaided switch. The switch loss has been decreased by 83⅓% (), (30W to 5W).
have been reduced by 91⅔%, (), from 30W to 2.5W.
Note that the losses predicted by the equations in figure 8.13 amount to 5W + 15W = 20W. The
iii. As the current in the switch falls linearly to zero, the capacitor current increases linearly to 100A (k = discrepancy is due to the fact that the preferred value of 10nF with k = 1.2 giving 5W + 18W = 23W
1), such that the load current remains constant, 100A. Initially the capacitor voltage increases in a (rather that the calculated 8⅓nF, k =1) has been used for the resistor loss calculation.
quadratic function according to ♣
1
v cap (t ) = ∫ i cap dt 8.3.3 The polarised turn-on snubber circuit – with air-core (non-saturable) inductance
C
The capacitor charges quadratically towards 600V in 100ns, as its current increases linearly from zero to A series turn-on snubber comprises an inductor-diode combination in the collector circuit as shown in
100A, that is figure 8.16. At turn-on the inductor controls the rate of rise (from zero) of collector current and supports a
100 ns
1 t portion of the supply voltage while the collector voltage falls. At switch turn-off the energy stored in the
C ∫0
600V = 100A dt
100ns inductor, ½Ls I m2 , is transferred in the form of current through the diode and dissipated in the diode Ds
and any added series resistance R, and in the resistance of the inductor.
that is C = 8 1 3 nF
Use a 10nF, 1000V dc, metallised polypropylene, high dv/dt capacitor.

Df

600V 600V
Im Im
ic=100(1-t/tfi) ic=100(1-t/tfi)

100A 100A

300V 2 R
vc=600(t/tfi)
2
vc=300(t/tfi)
P(t) P(t)

t t

Figure 8.16. Turn-on switching-aid circuit incorporating series inductance, Ls.

icap icap

Figure 8.17 shows collector turn-on waveforms with and without a turn-on snubber circuit. The turn-on
100A 100A
loss associated with an unaided switch, figure 8.17a, neglecting the current rise time, is given by
IDf
IDf
W = ½V s I mt fv (J) (8.22)
where it is assumed that the collector current rise time is zero and that the collector voltage falls linearly,
600V=Area/C according to v c (t ) = Vs (1 − t / t fv ) .
When an inductive turn-on snubber circuit is employed, collector waveforms as in figure 8.17b or 8.17c
600V=Area/C result.
The two possibilities and the associated circuit voltage and current waveforms in each case are shown
0 tfi 1.5tfi 0 tfi in detail in figure 8.18. The waveforms are based on satisfying Kirchhoff’s voltage and current laws for
t tt
each case.
Example 8.4. part (b) Example 8.4. part (c)
305 Power Electronics Chapter 8 Protecting Diodes, Transistors, and Thyristors 306

Vs
For low inductance the collector current reaches its maximum value Im (the load current) before the
collector voltage has reached zero. As shown in figure 8.17b, from v = L di/dt, the collector current
increases quadratically ic(t) = Im (t/τ)2 and the switch turn-on loss is given by vDf = Im
Wt = ½Vs I mt fv (½k 2 - 43 k + 1) (J) (8.23) Vload iDf

for k ≤ 1, where k = τ / tfv as defined in figure 8.17. Vs Vs

vind ic
Im = iind
Im
vce vce
Vs
Ic
vce

vo io io
ic
off on off = ½Vs t f v /Ls on
switch
t voltage and current t
tfv tfv
tri

Vs Vs Vs Vs

vce VDf vce VDf

Vs =Vload =Vload

Im
Kirchhoff’s
Vind voltage law Vind
increasing Ls

vo Vs = vload + vind + vc
t t

Im Im Im Im

iDf iDf

Vs

Im ic = iind Kirchhoff’s ic = iind

current law
io
increasing Ls Im = iDf + ic
t t
τ τ

Figure 8.18. Turn-on snubber waveforms satisfying Kirchhoff’s laws:

(a) turn-on with small snubber inductance and (b) turn-on with large snubber inductance.
increasing Ls
vc× ic
(d)

t Minimum total turn-on losses of 5/9 those of the un-aided case, occur at k = ⅔ when
2 V s t fv
Ls = (H) (8.25)
9 Im
Figure 8.17. Switch voltage and current collector waveforms at turn-on:
(a) without a snubber; (b) and (c) with an inductive snubber; and (d) switch power losses. At switch turn-off, the snubber inductance stored energy is dissipated as heat in the snubber
freewheeling diode path. The maximum power loss magnitude is dependent on the operating frequency
and is given by
These losses include both switch losses and stored inductor energy subsequently dissipated. For higher
PLs = ½Ls I m2 f s (W) (8.26)
snubber inductance, the collector voltage reaches zero before the collector current reaches the load
current level. Initially the inductor current increases quadratically iLs(t) = io (t/tfv)2, then when the collector This power is dissipated in the inductor winding
∨
resistance, resistance
∨
R, and freewheeling diode Ds.
voltage has reached zero, the current increases linearly. The switch loss is given by The time constant is designed such that t off = 5 Ls / R where t off is the minimum device off-time, where
1 R is the effective total series resistance. The time constant can be reduced either by increasing the
Wt = ½Vs I mt fv (J) (8.24) series resistance or by inserting a Zener diode as shown in figure 8.19.
6 × ( 2k - 1)
Note that these equations are similar to those for the turn-off snubber, except that the current fall time tfi A disadvantage of series resistance R as in figure 8.19a is that the switch collector voltage at turn-off is
is replace by the voltage fall time, tfv. The normalised loss components for the capacitive snubber in increased from Vs to Vs + ImR. The resistor must also have low self-inductance in order to allow the
figure 8.13 are valid for the inductive turn-on snubber. collector current to rapidly transfer from the switch to the resistor/diode reset circuit. The advantage of
using a Zener diode as in figure 8.19b is that the maximum overvoltage is fixed, independent of the load
307 Power Electronics Chapter 8 Protecting Diodes, Transistors, and Thyristors 308

current magnitude. For a given maximum overvoltage, the Zener diode absorbs the inductor-stored
energy quicker than would a resistor (see example 6.3 and problem 8.9). The advantages of using
resistive dissipation are lower costs and more robust heat dissipation properties.

Alternatively the Zener diode can be placed across the switch as shown in figure 8.19c. The power
dissipated is increased because of the energy drawn from the supply, through the inductor, during reset. vo
At higher power, the soft voltage clamp shown in figure 8.19d, and considered in section 8.2, can be
used. At switch turn-off, the energy stored in Ls, along with energy from the supply, is transferred and
stored in a clamp capacitor. Simultaneously energy is dissipated in R and returned to the supply as the
capacitor voltage rises. The advantage of this circuit is that the capacitor affords protection directly io
across the switch, but with lower loss than a Zener diode as in figure 8.19c. The energy loss equation for
each circuit is also shown in figure 8.19. In high-voltage applications, the combined features of the soft
clamp in figure 8.19d and the low loss Zener clamp in figure 8.19b can be realised by inserting a series
Zener as shown in the figure 8.19d insert. This avoids the need to series connect Zener diodes, which
would be necessary if the circuit in figure 8.19c were used at voltages above a few hundred volts.

Figure 8.20 shows how a switch turn-on snubber circuit modifies the SOA trajectory during switch-on,
avoiding a condition of simultaneous maximum voltage Vs and current Im.

Figure 8.20. The collector I-V trajectory at turn-on with a switching-aid circuit.
Df Df

Example 8.5: Turn-on air-core inductor snubber design

A 600V, 100A machine field winding is switched at 10kHz. In maintaining a constant field current, the
switch operates with an on-state duty cycle between 5% and 95% (5% ≤ δ ≤ 95%) and has a turn-on
voltage fall time of 100ns, that is, v c (t ) = 600V(1 − t / 100ns) .

i. Estimate the turn-on loss of the switch.

ii. Design an inductive turn-on snubber using the dimensionally correct identity v = Ldi/dt. What
is the current magnitude in the turn-on inductor when the switch voltage reaches zero.
iii. Design an inductive turn-on snubber such that the switch current reaches 100A at the same
time the switch collector voltage reaches zero.

In each snubber case, using first a resistor and second a Zener diode for inductor reset, calculate the
percentage decrease in switch power dissipation at turn-on, compared to the un-aided case.

Solution
Df Df
i. The switch un-aided turn-on losses are given by equation (8.13). The turn-on time is greater than the
voltage fall time (since the current rise time tri has been neglected), thus the turn-on switching losses will
be greater than
Dc Dz Won = ½V s I mt on = ½ × 600V × 100A × 100ns = 3mJ
Dc Dc Pon = Won × f s = 3mJ × 10kHz = 30W

ii. Use of the equation v = Ldi/dt results in a switch current that reaches the load current magnitude after
the collector voltage has fallen to zero. From k = ½ + Ls I m /V s t fv in figure 8.20, k = 3/2 satisfies the
dimensionally correct inductor equation. Substitution into v = Ldi/dt gives the necessary snubber
inductance
100A
600V = L
100ns
that is L = 600 nH
Figure 8.19. Four turn-on snubber modifications for increasing the rate of release of inductor Ls The snubber inductor releases its stored
∨
energy at switch turn-off, and must discharge (demagnetise)
stored energy: (a) using a power resistor; (b) using a power Zener diode; during the switch minimum off-time, t off . That is
(c) parallel switch Zener diode, VZ > Vs; and (d) using a soft voltage clamp. ∨
t off = 5 L /R
5% of 1 / 10kHz = 5 × 0.6µH / R
that is R = 0.6 Ω
Use the preferred value 0.68Ω (nearest higher preferred value), which reduces the L/R time constant.
309 Power Electronics Chapter 8 Protecting Diodes, Transistors, and Thyristors 310

The discharge resistor power rating is independent of resistance and is given by iii. As the voltage across the switch falls linearly to zero from 600V, the series inductor voltage
P0.68 Ω = ½ LI m2 f s increases linearly to 600V (k = 1), such that the voltage sum of each component adds to 600V. The
inductor current increases in a quadratic function according to
= ½ × 600nH × 100A 2 × 10kHz = 30W
1
The resistor in the circuit in figure 8.19a must have low inductance to minimise voltage overshoot at i ind (t ) = ∫ v ind dt
L
switch turn-off. Parallel connection of metal oxide resistors may be necessary to fulfil both resistance
The inductor current increases quadratically to 100A in 100ns, as its voltage increases linearly from zero
and power rating requirements. The maximum switch over-voltage at turn-off, (assuming zero resistor
to 600V, that is
inductance), at the commencement of core reset, which is added to the supply voltage, 600V, is 100ns
1
V 0.68 Ω = I m R = 100A × 0.68Ω = 68V 600V t
L ∫
100A = dt
100ns
which decays exponential to zero volts in five time constants, 5µs. The maximum switch voltage is 600V 0

+ 68V = 668V, at turn-off. The reset resistor should be rated at 0.68Ω, 30W, metal film, 750V dc working that is L = 300nH
voltage. ∨
The necessary reset resistance to reduce the 300nH inductor current to zero in 5µs is
A Zener diode, as in figure 8.19b, of Vz = L I m / t off = 0.6µH×100A/5µs = 12V , will reset the inductor in ∨

the same time as 5 L/R time constants. The switch voltage is clamped to 612V during the 5µs inductor t off = 5µs = 5 × 0.3µH /R
reset time at switch turn-off. that is R = 0.3Ω
At turn-on when the switch voltage reduces to zero, the snubber inductor current (hence switch current) Use the preferred value 0.33Ω in order to reduce the time constant.
is less than the load current, 100A, specifically The power dissipated in the 0.33Ω reset resistor, which is independent of resistance, is
1 P0.33Ω = ½ LI m2 f s = ½ × 300nH × 100A 2 × 10kHz = 15W
i 0 = ∫ v ind dt
L The resistance determines the voltage magnitude and the period over which the inductor energy is
100ns dissipated, not the amount of inductor energy to be dissipated. The inductor peak reset voltage is
1  t 
600nH ∫0  dt = 50A
= 600V ×  100A×0.33Ω = 33V, which is added to the supply voltage of 600V, giving 633V across the switch at turn-
 100ns  off. That is, use a 0.33Ω, 15W metal film (for low inductance), 750V dc working voltage resistor.
∨
The switch turn-on loss is reduced from 30W to A Zener diode, as in figure 8.19b, of Vz = L I m / t off = 0.3µH×100A/5µs = 6V (use 6.8V), will reset the
2
100ns 100ns
 t   t  inductor in the same time as 5 L/R time constants. The switch voltage is clamped to 606.8V during the
Pon = f s ∫0
i cv c dt = f s ∫0
V s  1-
 100 ns 
× i0   dt
 100ns 
∨
t off = 5µs inductor reset time at turn-off.
2
The energy dissipated in the switch at turn-on is reduced from 30W to
100ns
 t   t  100ns 100ns 2
= fs ∫ 600V  1-  × 50A  100ns  dt = 2.5W  t   t 
0  100 ns    Pon = f s ∫
0
i cv c dt = f s ∫0
V s  1-
 100ns 
× Im 
100 ns 
 
dt

100ns 2
The total turn-on losses (switch plus snubber resistor) are 2.5W + 30W = 32.5W, which is more than the  t   t 
30W for the unaided switch. Since the current rise time tri has been neglected in calculating the 30W
= fs ∫
0
600V  1-  × 100A  100 ns  dt = 5W
 100ns   
un-aided turn-on losses, it would be expected that 32.5W would be less than the practical un-aided
case. The switch loss is decreased by 92⅔%, (), from 30W down to 2.5W. The total turn-on snubber losses (switch plus snubber resistor) are 5W+15W = 20W, which is less than
the 30W for the unaided switch. The switch losses, with an inductive turn-on snubber, are decreased by
83⅓%, (), from 30W to 5W.
600V 600V
♣
vc=600(1-t/tfv)
vc=600(1-t/tfv)

8.3.4 The polarised turn-on snubber circuit - with saturable ferrite inductance
100A 100A
The purpose of a turn-on snubber circuit is to allow the switch collector voltage to fall to zero while the
collector current is low. Device turn-on losses are thus reduced, particularly for inductive loads, where
during switching the locus point (Vs, Im) occurs in the un-aided transition case.
ic=50(t/tfv)2 P(t) This turn-on loss reduction effect can be achieved with a saturable inductor in the circuit shown in figure
50A ic=100(t/tfv)2
P(t) 8.21a, rather than using a non-saturable (air core) inductor as previously considered in section 8.3.3.
The saturable inductor in the snubber circuit is designed to saturate after the collector voltage has fallen
to zero, at point y in figure 8.21. Before saturation the saturable inductor presents high reactance and
t t only a low magnetising current flows. Once the collector voltage has reached zero, the inductance can
saturate since the switch-on loss period is finished. From Faraday’s equation, assuming the collector
voltage fall to be linear, Vs (1 − t / t fv ) , the saturable inductor ℓs must satisfy
vind vind
dφ dB
vA = N= NA (8.27)
dt dt
600V 600V Rearranging, using an inductor voltagev A (t ) = V s − v c (t ) = V s t / t fv , and integrating gives
t fv t fv
1 1 t
VDf
Bs =
NA ∫v A (t ) dt =
NA ∫V s
t fv
dt (8.28)
VDf=Vload 0 0
100A=Area/L
which yields the identity
2NA B s
100A=Area/L Vs = t fv (V) (8.29)
0 tfv 1.5tfv 0 tfv where N is the number of turns,
t t
A is the core area, and
Example 8.5. part (b) Example 8.5. part (c) Bs is the core ferro-magnetic material saturation flux density.
311 Power Electronics Chapter 8 Protecting Diodes, Transistors, and Thyristors 312

The inductor magnetising current IM should be much less than the load current magnitude Im, IM << Im, i. Design a saturable inductor turn-on snubber that saturates as the collector
and the magnetising current at saturation is given by voltage reaches zero, using a ferrite core with the following parameters.
I M = H s Leff / N (A) (8.30) • A = 0.4 sq cm
where Leff is the core effective flux path length and Hs is the magnetic flux intensity at the onset of • L = 4cm
saturation. Before core saturation the inductance is given by • Bs = 0.4T
L = N Φ / I = N 2 / ℜ = µ0 µr A N 2 / Leff (H) (8.31) • Hs = 100At/m
ii. Calculate the switch losses at turn-on when using the saturable reactor. What
is the percentage reduction in switch turn-on losses?
When the core saturates the inductance falls to that of an air core inductor (µr = 1) of the same turns and iii. If an air cored inductor is used to give the same switch turn-on loss, what are
dimensions, that is, the incremental inductance is the losses at reset?
Lsat = µ0 AN 2 / Leff (H) (8.32)
Solution
The energy stored in the inductor core is related to the triangular B-H area shown in figure 8.21c and
magnetic volume, and is approximated by From example 8.5, which utilises equation (8.13), the unaided switch turn-on loss is 30W.
W As = ½B s H s ALeff = ½LI M2 (J) (8.33)
i. From equation (8.29) the number of core turns is
The collector turn-on waveforms are shown in figure 8.21b, while the corresponding B-H curve and SOA N = ½V s t fv / A B s
trajectories are illustrated in figure 8.21 parts c and d. It will be seen in figure 8.21b that little device turn-
on electrical stressing occurs. = ½ × 600V × 0.1µs / 0.4 × 10−4 × 0.4T ≈ 2 turns
The collector current hence magnetising current IM at saturation, that is, when the collector voltages
reaches zero, is given by equation (8.30)
I M = Hs Leff / N
= 100At/m × 0.04 / 2 = 2A
Since IM << Im, (2A<<100A), this core with 2 turns produces satisfactory turn-on snubber action,
x
z resulting in greatly reduced switch losses at turn-on.
Vs
Im
From equation (8.31) the inductance before saturation is
L = NAB s / I M
IM = 2 × 0.4 × 10−4 × 0.4T / 2A = 16µH
y The incremental inductance after saturation, from equation (8.32), is given by
t Lsat = N 2 A µ0 / Leff
= 22 × 0.4 × 10−4 × 4π × 10−7 / 0.04 = 50nH
From equation (8.33) the energy stored in the core and released as heat in the reset resistor is
WL = ½LI M2 ( = ½B s Hs Leff A )
= ½ × 16µH × 22 = 32µJ
minimal
energy
PL = WL × f s = 32µJ × 10kHz = 0.32W
∨
The time t off for core reset via the resistor in five L/R time constants, is dominated by the 16µH section
B energy
(the pre-saturation section) of the B-H curve, thus
z z
∨
t off = 5µs = 5 × 16µH / R
y
that is R = 16Ω
Bs µ0 Use a 18Ω, 1W, carbon composition resistor, for low inductance.
This resistance results in a switch voltage increase above 600V of 18Ω×100A=1800V at turn-off. This
tfv high-voltage may be impractical in terms of the switch and resistor voltage ratings.
µ0µr
y Alternatively, the Zener diode clamps shown in figures 8.19 b or c, may be suitable to dissipate the
IM 0.32W of stored magnetic energy. The Zener voltage is determined by assuming that a fixed Zener
IM Im x
x voltage results in a linear decrease in current from 2A to zero in 5µs. That is, assuming minimal core
t=0 stored energy associated with the current decrease from 100A to 2A,
Hs H ∨
t off

(c) (d) WL = V Z ∫i ind dt ( = ½LI )

2
M
0
Figure 8.21. Switch turn-on characteristics when a saturable inductor is used in the turn-on 32µJ = ½ ×V Z × 2A × 5µs
snubber: (a) circuit diagram; (b) collector voltage and current waveforms;
(c) magnetic core B-H curve trajectory; and (d) safe operating area I-V turn-on trajectory. that is V Z = 6.4V
Use a 6.8V, 1W Zener diode to clamp and dissipate the 0.32W of reset power, as in figure 8.19b.
Series connected Zener diodes in parallel with the switch, as in figure 8.19c, dissipate 30W.
Example 8.6: Turn-on ferrite-core inductor snubber design
The energy associated with the saturation region is small and is released in an insignificant time
A 600V, 100A machine field winding is switched at 10kHz. In maintaining the field current constant, the compared to the 5µs minimum off-time. The advantage of the Zener diode clamping approach, as
switch operates with an on-state duty cycle between 5% and 95% (5% ≤ δ ≤ 95%) and has a turn-on opposed to using a resistor, is that the maximum switch voltage is clamped to 606.8V, even during the
voltage fall time of tfv = 100ns, that is,v c (t ) = 600V × (1 − t / 100ns ) . short, low energy period when the inductor current falls from 100A to 2A.
313 Power Electronics Chapter 8 Protecting Diodes, Transistors, and Thyristors 314

ii. The switch turn-on losses with the saturable reactor are given by
100ns 100ns 2 L-R reset currents
 t   t  discharge
Pon = f s ∫0
i cv c dt = f s ∫0
V s  1-
 100ns 
× IM   dt
 100 ns  t
100ns 2
 t   t 
= f s ∫ 600V  1-  × 2A  100 ns  dt = 0.1W
∨
t off
∨
t on
0  100ns   
The switch losses at turn-on have been reduced from 30W to 0.1W, a 99⅔% decrease in losses. The
R-L-C
total losses (switch plus Zener diode) are 0.1W + 0.32W = 0.42W, which is significantly less than the discharge
30W in the un-aided case.

B IM Im Im
100A

0.4T ∨ ∨
t on t off ≥ 25Ls C s
½BsHs t = 0.1µs core reset
IM
50nH 2A

VZ = 6.8V
16µH

t=0 Figure 8.22. Unified snubber incorporating both a turn-on and a turn-off circuit
H
t which share the one dissipation reset resistor.

0 100At/m 5000At/m 0 5µs

2A 100A 8.4 Snubbers for bridge legs

Example 8.6 Figure 8.23 parts a to c show three typical switch bridge leg configurations used in inverters as shown in
figures 14.1 and 14.3. The polarised inductive turn-on snubber Ls and capacitive turn-off snubber Cs are
incorporated into the bridge legs as shown in each circuit in figure 8.23.
iii. If an air core inductor of 16µH (from part i) were to replace the saturable reactor, the stored energy
released would give losses The combinational polarised snubber circuit in figure 8.23a can be used to minimise the number of
W = ½LI m2 snubber components. The turn-on snubber inductance Ls, reset resistor R, and snubber capacitor Csc,
are common to any number of bridge legs. The major disadvantage is that turn-off snubber action
= ½ × 16µH × 1002 = 80mJ
associated with the lower switch is indirect, relying on low inductance decoupling of Cs through Csc.
P = W × f s = 80mJ × 10kHz = 800W
Clearly the use of an air cored inductor rather than a saturable reactor, to achieve the same switch loss With an inductive load, unwanted turn-off snubber action occurs during the switch modulation sequence
of 0.1W at turn-on, is impractical. as shown by the paths in figures 8.23b and 8.23c. When the upper switch Tu is turned off as in figure
♣ 8.23b the load current Im is diverted to the freewheel diode Df. While Df conducts, the capacitor Cs
discharges to zero through the resistor R, as shown, dissipating energy ½C sV s2 . When the switch Tu is
turned on, the load current is provided via the switch Tu and the snubber capacitor Cs is charged through
8.3.5 The unified turn-on and turn-off snubber circuit the series turn-on snubber inductance, as shown in figure 8.23c. A lightly damped L-C oscillation occurs
and Cs is over charged. Advantageously, the recovery voltage of the freewheel diode Df is controlled by
Figure 8.22 shows a switching circuit which incorporates both an inductor turn-on and a capacitor turn- the capacitor voltage rise.
off snubber circuit. Both Cs and Ls are dimensioned by the analysis outlined in sections 8.3.1 and 8.3.3,
The unwanted snubber action across the non-power conducting switch can be avoided in some
respectively. The power rating of the dissipating resistor R incorporates a contribution from both the
applications by using a series blocking diode as shown in figure 8.23d. The diode Db prevents Cs from
turn-on inductor Ls and turn-off capacitor Cs, according to
discharging into the load as occurs with the lower switch in figure 8.23b. A blocking diode can be used to
PRs = ½ (Ls I m2 + C sV s2 ) f s (W) (8.34) effectively disable the internal parasitic diode of the MOSFET. Adversely, the blocking diode increases
the on-state losses.
Calculated resistance values to satisfy both minimum off and on time reset according to
∨ ∨ In reactive load applications, bridge legs are operated with one switch on, with only a short underlap
t on ≥ 5Rs C s and t off ≥ 5Ls /Rs , may result in irreconcilable resistance and/or switch voltage/current
when both switches are off. Thus although the snubber capacitor cannot discharge into the load in figure
requirements. The snubber capacitor discharges at turn-on via an L-C-R circuit rather than the usual R-
8.23d, it always discharges through the switch T, regardless of load current flow through the switch.
C circuit, hence reducing the turn-on current stressing of the switch.
A dual soft-clamping circuit is shown in figure 8.23e, which is only active when the switch voltage
In example 8.4 the resistor requirement for the 16⅔nF capacitive turn-off snubber is R < 56Ω, while the exceeds the supply voltage and during diode recovery voltage snap overshoot.
0.6µH inductive turn-on snubber in example 8.5 requires R > 0.68 Ω. Thus 0.68Ω < R < 56Ω satisfies
snubber Ls and Cs reset requirements. The maximum reset current and voltage are related to Z = √Ls/Cs. In IGBT and MOSFET applications, the conventional R-C-D turn-off snubber is not usually required. But
In combining the two snubber functions, the single resistor may reduce the maximum switch over- because of diode recovery limitations, a turn-on snubber may be necessary. In low frequency
voltage at turn-off, Im×Z, and the maximum switch snubber current at turn-on Vs /Z. If R is too small a applications, a single turn-on snubber inductor can be used in the dc link as shown in figure 8.24a.
high switch snubber current Vs /Z flows at turn-on, while if R is too large, a large switch over-voltage, Snubber circuit design is based on the turn-on snubber presented in 8.3.3. The circuit in figure 8.24b is
Im×Z, occurs at switch turn-off. based on the conventional turn-on snubber being incorporated within the bridge leg. Figures 8.24c and d
An important by-product from using a turn-on snubber circuit is that the inductor controls the reverse show turn-on snubbers which use the soft voltage clamp, presented in 8.2, to reset the snubber inductor
recovery process of the load freewheeling bipolar Si diode at switch turn-on. current to zero at turn-off.
315 Power Electronics Chapter 8 Protecting Diodes, Transistors, and Thyristors 316

Vs

R
Ls Tu

Df Ls
Tu

Ls

Csc

T Df

Tu

Ls

Ls

(e)

Figure 8.23. Bridge leg configurations: (a) Undeland indirect leg snubber circuit; (b) leg with turn-on
snubber and turn-off snubber Cs discharge path shown; (c) L-C oscillation at switch-on;
(d) blocking circuit to prevent snubber capacitor discharge when Df conducts; and
(e) dual soft voltage clamps for high current single switch modules.

In each circuit in figure 8.24, at switch turn-off, t3, the energy ½LI m2 stored in the turn-on snubber
inductor is dissipated in the resistor of the discharge circuit. The energy ½LI r2m in L, due to diode
recovery, is dissipated in the resistor at time t1, in circuits (a), (b) and (c). In figure 8.24d the energy in
excess of that associated with the load, ½LI m2 , due to diode recovery, is dissipated in the switch and its
parallel connected diode. At time t1
Vce
W = ½LI rm2 + LI rm I m (8.35)
Vce +VDf
is dissipated in the two semiconductor components. Since the energy is released into a low voltage vce +
vDf, the reset time t2 - t1 is large.
Magnetic coupling of the inductors in figures 8.24c and d does not result in any net energy savings.

Figure 8.24. Turn-on snubbers for bridge legs:

(a) single inductor in dc link; (b) unified L-R-D snubber; (c) soft voltage clamp; and
(d) soft voltage clamp with load clamped.
317 Power Electronics Chapter 8 Protecting Diodes, Transistors, and Thyristors 318

8.5 Appendix: Non-polarised turn-off R-C snubber circuit analysis Equations (8.42) to (8.46), after normalisation are shown plotted in figure 8.4 as a function of the
snubber circuit damping factor ξ. The power dissipated in the resistor is approximately C e s2f s .
When a step input voltage is applied to the L-C-R circuit in figure 8.3, a ramped voltage appears across
the R-C part of the circuit. If this dv/dt is too large, a thyristor in the off-state will turn on as a result of the
induced central junction displacement current, which causes carrier injection from the outer junctions. 8.6 Appendix: Polarised turn-off R-C-D switching aid circuit analysis
The differential equations describing circuit current operation are
Switch turn-off loss for an unaided switch, assuming the collector voltage rise time is negligible
(D 2 + 2ξ0D + ω02 ) I = 0 (8.36) compared with the collector current fall time, is
and W = ½V s I mt fi (8.47)
(τ D + 1)I = CDe 0 (8.37) If τ is the time in figure 8.11 for the snubber capacitor Cs to charge to the supply Vs, and tfi is the switch
where D = differential operator = d /dt collector current fall time, assumed linear such that ic(t) = Im (1- t / tfi), then two capacitor charging
and ξ = damping ratio = ½R√C/L conditions can exist
ω0 = natural frequency = 1/√LC
ω = oscillation frequency = ω 0√ 1- ξ 2 • τ ≤ tfi
• τ ≥ tfi
Solution of equations (8.36) and (8.37), for initial current Io = 0, leads to t

(a) The snubber current Let k = τ/tfi and electrical energy W = ∫ 0

vi dt

I (t ) = e s
2ξ −ξω0t
e sin ωt (A) (8.38)
R 1 − ξ2 Case 1: τ ≤ tfi, k ≤ 1
(b) The rate of change of snubber current Figure 8.11b shows ideal collector voltage and current waveforms during aided turn-off for the condition
dI e   t ≤ tfi. If, assuming constant maximum load current, Im, during the switching interval, the collector current
= s e -ξω0t  cos ωt - ξ sin ωt  (A/s) (8.39) falls linearly, then the load deficit, Imt/tfi, charges the capacitor Cs. From i = Cdv/dt, the capacitor voltage,
dt L 1−ξ
2
 
and collector voltage, therefore increase quadratically. The collector voltage vc and current ic are given
(c) Snubber R-C voltage by
     t 
e 0 = e s  1 - e −ξω0t cos ωt - ξ sin ωt   (V) (8.40)
 1−ξ  i c (t ) = I m (1 − t )   t 
i c (t ) = I m (1 − t )  , τ ≤ t ≤ t
2
     fi
, 0 ≤t ≤τ and (8.48)
(d) The rate of change of R-C voltage  2
  fi
 fi
t 
v c (t ) = V s    v c (t ) = V s 
de 0 -ξω t   τ 
2
= ω0e s e 0  2ξ cos ωt + 1 − 2ξ sin ωt  (V/s) (8.41)  
dt  1 − ξ2  The final capacitor charge is given by
 
τ

The maximum value expressions for each equation can be found by differentiation
Q = C sV s = ∫ 0
(I m − i c (t ))dt = ½I mt fi k 2 (C) (8.49)

(a) Maximum snubber current The energy stored by the capacitor, Wc, and energy dissipated in the switch, Wt, are given by
 -1
 -ξ cos ξ


Wc = ½C sV s2 ( = ½QV s )
es  1−ξ 2  (8.50)
Ip = 2ξ e  (A) (8.42) = ½V s I mt fi × ½k 2 (J)
R
τ t fi
when cos ωt =ξ Wt = ∫VI 0 s m (t / τ )dt + ∫ V s I m (1 − t / t fi )dt
0
(8.51)
(b) The maximum snubber di/dt is given by
= ½V s I mt fi (1 − 4 3 k + ½k 2 ) (J)
dI p e s − e 0
= (A/s) (8.43)
dt L The total circuit losses Wtotal, are
(c) Maximum R-C voltage
Wtotal = Wt + Wc = ½V s I mt fi × (1 − 4 3 k + ½k 2 ) , k ≤ 1 (J) (8.52)
 -ξ cos −1  2ξ 2 −1 
 




 
∧  


1−ξ 2  
e o = es 1 + e

 (V) (8.44)
  Case 2: τ ≥ tfi, k ≥1
 
when cos ωt = 2ξ2 - 1 Figure 8.11c shows the ideal collector voltage and current switch-off waveforms for the case when k ≥ 1.
de 0 ∧ When the collector current falls to zero the snubber capacitor has charged to a voltage, v0, where
(d) Maximum slew rate, =S
dt 1 t fi
for ξ < ½ vo = ∫ i dt Cs 0
 −1  2
-ξ cos ξ  3 − 4 ξ 

 (8.53)
  
 1
∧  1−ξ 2  = × ½I mt fi (V)
S = e 0ω0e  
(V/s) (8.45) Cs
when cos ω=ξ (3-4ξ2). The minimum value of the maximum slew rate is 0.81 pu at ξ = 0.265.
The collector voltage vc and current ic are given by
at ξ = ½, Sl = ωo e s .  t 
i c (t ) = I m (1 − t ) i c (t ) = 0 
 fi
, 0 ≤t ≤t  

and  1 (V s − v 0 ) t kv 0 −V s , t fi ≤ t ≤ τ (8.54)
for ξ > ½ t  
2 fi
v (t ) = +
v c (t ) = v o     c t fi k − 1 k −1 
∧
 
S = 2ξ e sw 0 (= e s R / L ) (V/s) (8.46)   t fi  
when t = 0
319 Power Electronics Chapter 8 Protecting Diodes, Transistors, and Thyristors 320

The final capacitor charge is given by 8.2. Prove that the minimum total losses (switch plus snubber resistor), associated with a switch
t fi τ
which utilises a capacitive turn-off switching-aid circuit, occur if the snubber capacitor is fully
Q = C sV s = ∫ 0
(I m − i c (t ))dt + ∫ I m dt
t fi
(8.55) charged when the collector current has fallen to ⅓ its original value. Derive an expression for
= I mt fi (k − ½ ) (C) this optimal snubber capacitance.
The energy stored by the capacitor Wc, and energy dissipated in the switch Wt, are given by I mt fi
C s = 29 (F)
Wc = ½C sV s2 (= ½QV s ) Vs
= ½V s I mt fi × (k − ½) (J)
(8.56) 8.3. Derive an expression for the optimal turn-on switching-aid circuit inductance, assuming the
t fi
v 0I m (1 − t / t fi )(t / t fi ) dt
2
collector current rise time in the unaided circuit is very short compared with the collector voltage
Wt = ∫ 0
fall time.
= 112v 0I mt fi (J) V s t fv
Using equations (8.53) and (8.55) to eliminate v0 yields Ls = 2 9 (H)
Im
1
Wt = ½V s I mt fi × (J) (8.57)
6 (2k − 1) 8.4. A ferrite toroid has B-H characteristics as shown in figure 8.26 and a cross-sectional area, A, of
The total circuit losses Wtotal, are 10 mm2 and effective length, Leff of 50 mm.
Wtotal = Wt + Wc = ½V s I mt fi ×
(k 2 − k + 1 3 ) , k ≥ 1 (J) (8.58)
( k − ½)
The equations (8.50) to (8.52), and (8.56) to (8.58) have been plotted, normalised with respect to
unaided losses ½V s I mt fi , in figure 8.13.

Reading list

International Rectifier, HEXFET Data Book,

HDB-5, 1987.

Peter, J. M., The Power Transistor in its Environment,

Thomson-CSF, Sescosem, 1978. Figure 8.26. Problem 8.4, B-H characteristics.

Siliconix Inc., Mospower Design Catalog, A number of such toroid cores are to be stacked to form a core for a saturable inductor turn-on
January 1983. snubber in a switching circuit. The circuit supply voltage is V and the switch voltage fall time at
turn-on is tfv. Assume tfv is independent of supply voltage and falls linearly from V to 0 V.
Grafham, D. R. et al., SCR Manual, i. Using Faraday’s Law, show that if the ferrite inductor is to saturate just as the switch
General Electric Company, 6th Edition, 1979. collector voltage falls to zero at turn-on, then the number of turns N for n cores is given by
Vt fv
N =
2B m An
Problems
ii. Derive an expression for the inductance before saturation.
iii. It is required that the maximum magnetising current before saturation does not exceed 1 A.
8.1. The figure 8.25 shows GTO thyristor turn-off anode I-V characteristics. Calculate
If only 10 turns can be accommodated through the core window, what is the minimum
i. turn-off power loss at 1 kHz. What percentage of the total loss does the tail current account for?
number of cores required if V = 200 V and tfv = 1 µs?
ii. losses when a capacitive turn-off snubber is used and the anode voltage rises quadratically to
iv. How many cores are required if the supply V is increased to the peak voltage of the three-
600V in 0.5µs. What percentage of the total losses does the tail current account for? What is
phase rectified 415 V ac mains, and the load power requirements are the same as in part
the necessary capacitance?
iii?
iii. losses when a capacitive turn-off snubber is used and the anode voltage rises quadratically to
v. Calculate the percentage change in the non-saturated inductance between parts iii and iv.
600V in 2µs. What percentage of the total losses does the tail current account for? What is the
vi. What are the advantages of saturable inductance over linear non-saturable inductance in
necessary capacitance?
[10.5 W] turn-on snubber applications? What happens to the inductance and stored energy after
saturation?
2
[ℓ =N /R, n = 5, n = 4, 1:9]

8.5. Prove, for an inductive turn-on snubber, where the voltage fall is assumed linear with time, that
2Ls I m
k = for k ≥ 1
V s t fv
LI
k = s m +½ for k ≤ 1
V s t fv
where k = tfv /τ (see figures 8.17 and 8.20).

8.6. Derive the expressions in table 8.1 for a turn-off snubber assuming a cosinusoidal current fall.
Figure 8.25. Problem 8.1, GTO thyristor tail current characteristics. Prove equation (8.21), the optimal capacitance value.
321 Power Electronics Chapter 8 Protecting Diodes, Transistors, and Thyristors 322

Blank
8.7 Show that when designing a capacitive turn-off snubber using the dimensionally correct
equation i = Cdv/dt, as in example 8.4b, the capacitor charges to ½Vs when the switch current
reaches zero.

8.8 Show that when designing an inductive turn-on snubber using the dimensionally correct
equation v = Ldi/dt, as in example 8.5b, the inductor current reaches ½Im when the switch
voltage reaches zero.

8.9 Reset of inductive turn-on snubber energy ½Ls I m2 can be affected through a resistor, R, as in
figure 8.19a or through a Zener diode, Dz, as in figure 8.19b.
Show that for the same reset voltage, namely ∨
Vz=ImR, in each case, Zener diode reset is n
times faster the resistor reset when nRs C s ≤ t on .

8.10 In figure 8.12a show that for τ < tfi, the collector current is given by
2 I mV s C s
io = I m −
t fi
when the collector voltage reaches the supply voltage rail Vs.

8.11 In figure 8.18a show that for τ < tfv, the collector voltage is given by
2 I mV s Ls
v o = Vs −
t fv
when the collector current reaches the load current Im.

8.12 An RCD turn-off snubber is used across a switch in a 600V dc, 10A, 20kHz chopper application.
The switch current fall time at 10A is 100ns.
i. What is the capacitor voltage when the switch current reaches zero at turn-off, if the
switch turn-off loss is to be 1W?
ii. What snubber capacitance is necessary?
For the same un-aided switching conditions, the total losses (switch plus snubber resistor) are to
be (a) 10/3W
(b) 9W
What is the capacitor requirement and what is the capacitor voltage when the switch current
reaches zero?
[600V, 0.83nF]

8.13 For a cosinusoidal current fall at turn-off as shown in figure 8.15, derive expressions for the
switch current io when k < 1 and collector voltage vo when k > 1.