Low Noise Transistors BC549B,C

NPN Silicon
BC550B,C
MAXIMUM RATINGS
Rating Symbol BC549 BC550 Unit
Collector–Emitter Voltage VCEO 30 45 Vdc
Collector–Base Voltage VCBO 30 50 Vdc
Emitter–Base Voltage VEBO 5.0 Vdc
Collector Current — Continuous IC 100 mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW 1
2
Derate above 25°C 5.0 mW/°C 3

Total Device Dissipation @ TC = 25°C PD 1.5 Watt

Derate above 25°C 12 mW/°C CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Operating and Storage Junction TJ, Tstg –55 to +150 °C
Temperature Range

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit COLLECTOR
1
Thermal Resistance, Junction to Ambient RJA 200 °C/W
Thermal Resistance, Junction to Case RJC 83.3 °C/W
2
BASE

3
EMITTER

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage V(BR)CEO Vdc
(IC = 10 mAdc, IB = 0) BC549B,C 30 — —
BC550B,C 45 — —
Collector–Base Breakdown Voltage V(BR)CBO Vdc
(IC = 10 µAdc, IE = 0) BC549B,C 30 — —
BC550B,C 50 — —
Emitter–Base Breakdown Voltage V(BR)EBO 5.0 — — Vdc
(IE = 10
Adc, IC = 0)
Collector Cutoff Current ICBO
(VCB = 30 V, IE = 0) — — 15 nAdc
(VCB = 30 V, IE = 0, TA = +125°C) — — 5.0 µAdc
Emitter Cutoff Current IEBO — — 15 nAdc
(VEB = 4.0 Vdc, IC = 0)

 Semiconductor Components Industries, LLC, 2001 1 Publication Order Number:

February, 2001 – Rev. 1 BC549B/D
 BC549B,C BC550B,C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain hFE —
(IC = 10 µAdc, VCE = 5.0 Vdc) BC549B/550B 100 150 —
BC549C/550C 100 270 —
(IC = 2.0 mAdc, VCE = 5.0 Vdc) BC549B/550B 200 290 450
BC549C/550C 420 500 800
Collector–Emitter Saturation Voltage VCE(sat) Vdc
(IC = 10 mAdc, IB = 0.5 mAdc) — 0.075 0.25
(IC = 10 mAdc, IB = see note 1) — 0.3 0.6
(IC = 100 mAdc, IB = 5.0 mAdc, see note 2) — 0.25 0.6
Base–Emitter Saturation Voltage VBE(sat) — 1.1 — Vdc
(IC = 100 mAdc, IB = 5.0 mAdc)
Base–Emitter On Voltage VBE(on) Vdc
(IC = 10 µAdc, VCE = 5.0 Vdc) — 0.52 —
(IC = 100 µAdc, VCE = 5.0 Vdc) — 0.55 —
(IC = 2.0 mAdc, VCE = 5.0 Vdc) 0.55 0.62 0.7
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product fT — 250 — MHz
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
Collector–Base Capacitance Ccbo — 2.5 — pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Small–Signal Current Gain hfe —
(IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) BC549B/BC550B 240 330 500
BC549C/BC550C 450 600 900
Noise Figure dB
(IC = 200 µAdc, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz) NF1 — 0.6 2.5
(IC = 200 µAdc, VCE = 5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz) NF2 — — 10

NOTES:
1. IB is value for which IC = 11 mA at VCE = 1.0 V.
2. Pulse test = 300 µs – Duty cycle = 2%.

RS
in

en
IDEAL
TRANSISTOR

Figure 1. Transistor Noise Model

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 BC549B,C BC550B,C

2.0 1.0
VCE = 10 V 0.9 TA = 25°C
hFE, NORMALIZED DC CURRENT GAIN
1.5
TA = 25°C
0.8
VBE(sat) @ IC/IB = 10
1.0 0.7

V, VOLTAGE (VOLTS)
VBE(on) @ VCE = 10 V
0.8 0.6

0.6 0.5
0.4
0.4 0.3

0.3 0.2
VCE(sat) @ IC/IB = 10
0.1
0.2 0
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)

Figure 2. Normalized DC Current Gain Figure 3. “Saturation” and “On” Voltages

BANDWIDTH PRODUCT (MHz)

10
400
300
7.0
200 TA = 25°C
Cib
C, CAPACITANCE (pF)
5.0
100
80 VCE = 10 V
TA = 25°C 3.0
60
Cob
40
f T, CURRENT-GAIN

30 2.0

20

1.0
0.5 0.7 1.0 2.0 5.0 7.0 10 20 50 0.4 0.6 1.0 2.0 4.0 10 20 40
IC, COLLECTOR CURRENT (mAdc) VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Current–Gain — Bandwidth Product Figure 5. Capacitance

170
r b, BASE SPREADING RESISTANCE (OHMS)

160

150
VCE = 10 V
f = 1.0 kHz
140
TA = 25°C

130

120
0.1 0.2 0.5 1.0 2.0 5.0 10
IC, COLLECTOR CURRENT (mAdc)

Figure 6. Base Spreading Resistance

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 BC549B,C BC550B,C

PACKAGE DIMENSIONS

CASE 029–04
(TO–226AA)
ISSUE AD

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A Y14.5M, 1982.
B 2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R 4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
P MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
L
SEATING F
PLANE K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
D B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
J D 0.016 0.022 0.41 0.55
X X F 0.016 0.019 0.41 0.48
G G 0.045 0.055 1.15 1.39
H H 0.095 0.105 2.42 2.66
SECTION X–X J 0.015 0.020 0.39 0.50
V C K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
N 0.080 0.105 2.04 2.66
1 N P --- 0.100 --- 2.54
R 0.115 --- 2.93 ---
N V 0.135 --- 3.43 ---

STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER

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