Objective Type Questions:

1. A power transistor is a four-layer, three junction device.

2. MOSFET is the most suitable power device for high
frequency (>100 kHz) switching application.
3. Insulated-gate bipolar transistor (IGBT) has
combinational advantages of BJT and MOSFET.
4. The three terminals of a power MOSFET are called Gate,
Drain, and Source.
5. A thyristor (SCR) is a unidirectional device.

Short Answer Questions:

1. What is the main function of a power BJT in high-current
applications?
→ The main function of a power BJT (Bipolar Junction
Transistor) in high-current applications is to act as a
current-controlled switch or amplifier. It allows a small
base current to control a much larger collector current,
making it suitable for driving heavy loads such as motors,
inverters, and power supplies.
2. How does the base current control the collector-emitter
current in a power BJT?
→ In a BJT, the collector-emitter current (I_CE) is
controlled by the base current (I_B) through the relation:
I_C = β × I_B,
where β is the current gain of the transistor. A small base
current modulates the larger collector current, enabling
amplification or switching action.
3. What is the primary difference between a MOSFET and a
power BJT in terms of control mechanism?
→ The primary difference is that a BJT is current-
controlled (requires continuous base current), whereas a
MOSFET is voltage-controlled (requires voltage at the
gate and minimal current). This makes MOSFETs more
efficient in switching applications.
 4. What is the basic structure of an IGBT?
→ An IGBT (Insulated Gate Bipolar Transistor) has a
basic structure that combines a MOSFET at the input (for
gate control) and a BJT at the output (for high-current
handling). It typically consists of four layers: P+
(substrate), N− (drift), P (body), and N+ (source), with a
gate insulated by an oxide layer.
5. What is the role of the gate terminal in an SCR?
→ The gate terminal in an SCR is used to trigger the
device into conduction mode. When a small gate current
is applied while the SCR is forward biased, it initiates
conduction from anode to cathode by allowing junction
breakdown, after which the gate loses con
Long Answer Questions:

1. How does the base-emitter junction biasing affect the

operation of a power BJT in the active, saturation, and cutoff
regions?
The operation of a power BJT depends on the biasing of its two
PN junctions: the base-emitter junction and the collector-base
junction.
 Active Region:
Base-Emitter Junction is forward biased
Collector-Base Junction is reverse biased
o

In this region, the transistor acts as an amplifier. A

o

small current into the base controls a large current

o

from collector to emitter.

Used in analog applications like audio amplification.
Saturation Region:
o

Both junctions are forward biased

The transistor is fully on and acts like a closed
o

switch
o
 Voltage across collector-emitter (V_CE) is low
Used in digital circuits for switching applications.
o

Cutoff Region:
o

Both junctions are reverse biased

The transistor is off and no current flows through
o

collector-emitter path
o

Acts like an open switch

Thus, by changing the base-emitter biasing, the BJT can
o

transition between these three regions to perform

amplification or switching functions.

2. How do thermal runaway and secondary breakdown impact

the performance and reliability of a power BJT, and what
techniques can mitigate these issues?
 Thermal Runaway:
Occurs when increased current causes increased
heat, which further increases current, creating a
o

destructive cycle.
In BJTs, as the junction temperature rises, the
leakage current increases, leading to further
o

heating.
Impact: Leads to permanent damage of the
transistor due to overheating.
o

Mitigation Techniques:
Heat sinks and cooling systems
o

Use of negative temperature coefficient

resistors (NTC)


Proper derating (operating below maximum

rated parameters)


 Thermal protection circuits

  Secondary Breakdown:
Happens due to localized hot spots inside the BJT
when high voltage and current are present
o

simultaneously.
Unlike thermal runaway, it is not uniform heating
but localized damage due to current crowding.
o

Impact: Causes immediate failure due to internal

damage.
o

Mitigation Techniques:
Limit collector current
o

 Avoid simultaneous high voltage and current

Use of snubber circuits across switching
devices


Proper transistor selection with sufficient

secondary breakdown ratings


Ensuring proper thermal management and protection circuits

is essential to enhance the performance and reliability of BJTs.

3. How does the gate-source voltage influence the operation of

a power MOSFET?
The operation of a Power MOSFET is controlled by the voltage
applied between the gate and source terminals (V_GS).
When V_GS = 0, the MOSFET is in the OFF state. No
conduction path exists between the drain and source


(except leakage).
When V_GS > Threshold Voltage (V_th), the MOSFET
turns ON. An inversion layer (channel) is formed that


allows current to flow from drain to source.

As V_GS increases further, the conductivity improves
(channel resistance decreases), and the MOSFET moves


into:
 Ohmic Region (acts as variable resistor)
Saturation/Active Region (acts as constant current
o

source)
o

Since the gate is insulated by an oxide layer, no

continuous gate current is needed, unlike BJT.


Summary: Gate-source voltage (V_GS) is the key control input

in a MOSFET. It controls the conductivity of the channel and
thus the current between drain and source. This voltage-
controlled nature makes MOSFETs very power-efficient in
switching applications.

4. What are the main advantages of using IGBT in power

electronics applications?
The Insulated Gate Bipolar Transistor (IGBT) is widely used in
power electronics due to the following advantages:
 High Input Impedance:
Due to the MOSFET gate, IGBT requires negligible
gate current, reducing power loss in control circuits.
o

 High Current Handling:

The BJT output stage allows it to handle large
currents efficiently.
o

 Low On-State Conduction Loss:

Lower voltage drop across collector-emitter
compared to MOSFETs at high currents.
o

 Ease of Gate Drive:

Voltage-controlled like MOSFETs, making the gate
drive circuit simpler and cheaper.
o

 Fast Switching Speed:

Faster than BJT but slightly slower than MOSFET,
suitable for medium to high frequency.
o

 Latch-up Free:
 IGBTs are designed to avoid latch-up problems
common in thyristors.
o

 Ruggedness:
Withstands high voltage and current stress
conditions.
o

Applications:
 Inverters for motor drives
 Electric vehicles (EV)
 UPS systems
 Renewable energy (solar/wind) inverters

5. Explain the difference between forward blocking, forward

conduction, and reverse blocking modes of an SCR.
An SCR (Silicon Controlled Rectifier) operates in three main
modes:
1. Forward Blocking Mode:
Anode is positive with respect to cathode
Gate is not triggered
o

Junction J1 and J3 are forward biased, but J2 is

o

reverse biased, so SCR does not conduct

o

Acts like an open switch

2. Forward Conduction Mode:
o

Anode is positive, and gate pulse is applied

Gate triggers the device → J2 becomes forward
o

biased
o

All junctions conduct → SCR turns ON, current flows

Remains ON even after gate current is removed
o

(latching)
o

3. Reverse Blocking Mode:

 Anode is negative with respect to cathode
J1 and J3 are reverse biased → SCR blocks current
o

Acts like a diode in reverse bias

o

These modes define the switching behavior of the SCR in

o

power circuits. Proper triggering and biasing allow it to work

efficiently in AC/DC control, motor drives, and rectifiers.