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Silicon Diffused Power Transistor 2SD1878: General Description

The 2SD1878 is a high-voltage, high-speed switching NPN transistor designed for use in horizontal deflection circuits of color television receivers. It features a maximum collector-emitter voltage of 1500V and a total power dissipation of 60W. Key electrical characteristics include a collector current of 5A and a saturation voltage of 5V at specified conditions.

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147 views1 page

Silicon Diffused Power Transistor 2SD1878: General Description

The 2SD1878 is a high-voltage, high-speed switching NPN transistor designed for use in horizontal deflection circuits of color television receivers. It features a maximum collector-emitter voltage of 1500V and a total power dissipation of 60W. Key electrical characteristics include a collector current of 5A and a saturation voltage of 5V at specified conditions.

Uploaded by

cesarchaconvacaciones
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

2SD1878 SILICON DIFFUSED POWER TRANSISTOR

GENERAL DESCRIPTION
Highvoltage,high-speed switching npn transistors in
a plastic envelope with integrated efficiency,primarily
for use in horizontal deflection circuites of colour
television receivers

QUICK REFERENCE DATA TO-3PML


SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VCESM Collector-emitter voltage peak value VBE = 0V - 1500 V
VCEO Collector-emitter voltage (open base) - 600 V
IC Collector current (DC) - 5 A
ICM Collector current peak value - 10 A
Ptot Total power dissipation Tmb 25 - 60 W
VCEsat Collector-emitter saturation voltage IC = 4.0A; IB = 1.2A - 5 V
Icsat Collector saturation current f = 16KHz - A
VF Diode forward voltage IF = 4.0A 2.0 V
tf Fall time IC=4A,IB1=-IB2=1.2A,VCC=140V 1.0 s

LIMITING VALUES
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VCESM Collector-emitter voltage peak value VBE = 0V - 1500 V
VCEO Collector-emitter voltage (open base) - 600 V
IC Collector current (DC) - 5 A
ICM Collector current peak value - 10 A
IB Base current (DC) - 2 A
IBM Base current peak value - 3 A
Ptot Total power dissipation Tmb 25 - 60 W
Tstg Storage temperature -55 150
Tj Junction temperature - 150

ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
ICE Collector cut-off current VBE = 0V; VCE = VCESMmax - 1.0 mA
ICES VBE = 0V; VCE = VCESMmax - 2.0 mA
Tj = 125
VCEOsust Collector-emitter sustaining voltage IB = 0A; IC = 100mA - V
L = 25mH
VCEsat Collector-emitter saturation voltages IC = 4.0A; IB = 1.2A - 5 V
VBEsat Base-emitter satuation voltage IC = 4.0A; IB = 1.2A - 1.5 V
hFE DC current gain IC = 1A; VCE = 5V 8 30
VF Diode forward voltage IF = 4.0A 2.0 V
fT Transition frequency at f = 1MHz IC = 0.1A; VCE = 10V 3 - MHz
Cc Collector capacitance at f = 1MHz VCB = 10V 125 pF
ts Switching times(16KHz line deflecton circuit) IC=4A,IB1=-IB2=1.2A,VCC=100V 4.5 s
tf Turn-off storage time Turn-off fall time IC=4A,IB1=-IB2=1.2A,VCC=100V 1.0 s

Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: [Link] E-mail: wsccltd@[Link]

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