Electronic Devices Test 3

Number of Questions: 25 Time: 60 min.

Directions for questions 1 to 25: Select the correct alterna- 9. 8 volt is applied across a 2 cm long semiconductor bar.
tive from the given choices. The average drift velocity is 105 cm/s. The electron
1. The equation which relates diffusion constant with mobil- mobility is
ity is (A) 3 × 104 cm2/V–s (B) 4396 cm2/V–s
(A) Poisson’s equation (B) Continuity equation (C) 2500 cm /V–s
2
(D) 18000 cm2/V–s
(C) Einstein’s equation (D) Current equation 10. In the following circuit the transistor is in ________
2. The collector cut off current ICBO reduces considerably mode.
by doping the +
(A) emitter with low level of impurity V
–
(B) base with high level of impurity
(C) collector with high level of impurity
(D) emitter with high level of impurity
3. Frequently used applications of a PIN diode is (A) saturation (B) reverse active
(A) fast switching diode (B) harmonic generator (C) cut off (D) forward active
(C) voltage regulator (D) peak clipper 11. A silicon diode has reverse saturation current of 2.6 mA
4. Circuit symbol of schottky barrier diode is _____ . at 300°K. Find forward voltage for a forward current of
12 mA.
(A) (A) 0.42 V (B) 0.43 V
(C) 0.49 V (D) 0.51 V
(B)
(C) 12. A pn junction has built in potential of 0.8 V. The deple-
tion layer width at a reverse bias of 1.2 V is 4 mm. For a
(D) reverse bias of 8.2V. the depletion layer width will be
(A) 8.48 mm (B) 6.48mm
5. Zener breakdown occurs for _________.
(C) 0.48 mm (D) 4 mm
(A) Vz > 6V (B) Vz < 6V
(C) Vz = 6 volts (D) Independent of Vz 13. If the base width of a BJT is increased by a factor of 4,
then what is the collector current change
6. Match list I with list II
(A) collector current is independent of base width
List I (Diode) List II Application (B) increased by a factor of 4
P. zener diode 1. Tuning circuits (C) neither increased nor decreased
Q. Schottky diode 2. Current controlled attenuator
(D) decreased by a factor of 4
R. PIN diode 3. Voltage reference
14. In a bipolar junction transistor, the base current
IB = 100 mA and the collector current is Ic = 4.6 mA.
S. Varactor diode 4. High frequency switch
The a is
(A) P-2, Q-3, R-1, S-4 (A) 0.862 (B) 0.978
(B) P-4, Q-2, R-3, S-1 (C) 0.962 (D) 0.876
(C) P-3, Q-1, R-4, S-2 15. A BJT has I­B = 20mA, β = 99 and Ico = 2mA what is the
(D) P-3, Q - 4, R-2, S-1 collector current Ic.
7. In silicon at T = 300°K, the thermal equilibrium concen- (A) 2.8 mA (B) .28 mA
tration of holes are 4.5 × 1015 cm-3. The electron concen- (C) 2.9 mA (D) 0.29 mA
tration is 16. Photons of energy 1.6 × 10 J are incident on photo
-18

(A) 0.3 × 10-6 cm-3 (B) 5 × 104 cm-3 diode which has a responsivity of 0.6 A/W. If the opti-
(C) 5 × 104 m-3 (D) 0.3 × 10-6 m-3 cal power level is 10 mW. The photo current generated
8. A sample of silicon at T = 300°K is doped with arsenic at a is _________.
concentration of 2.5 × 1013 cm-3 and with boron of 1 × 1013 (A) 6mA (B) 7mA
cm-3. The material is (C) 5 mA (D) 8 mA
(A) n type with no = 1.5 × 1013 cm-3 17. In a CB configuration, current gain factor is 0.8, if the
(B) n type with no = 1.5 × 107 cm-3 emitter current is 1.6 mA, the value of IB is
(C) p type with p0 = 1.5 × 1013 cm-3 (A) 0.32 mA (B) 3.2 mA
(D) p type with p0 = 1.5 × 107 cm-3 (C) 0.41 mA (D) 4.1 mA
3.132 | Electronic Devices Test 3

18. A silicon pn junction diode under reverse bias has The thermal equilibrium generation rate for electron is
depletion region of width 12 mm. The relative permitiv- (A) 1.67 × 107 cm-3s-1 (B) 1.67 × 109 cm-3s-1
ity of silicon e­­r = 11.7 and the permitivity of free space (C) 2.3 × 10-9 cm3s-1 (D) 2.3 × 107 cm3 s-1
is e0 = 8.85 × 10-12 F/m. 23. Silicon is doped with boron to a concentration of
The depletion capacitance of the diode per square 6 × 1017 atoms/cm3. Assume the intrinsic carrier con-
meter is centration of silicon to be 1.5 × 1010/cm3 and the value
(A) 8.6 mF (B) 7.6 mF of VT to be 25mV at 300°K.
(C) 6.8 mF (D) 8.3 mF Compared to the undopped silicon, the fermi level of
19. A BJT has a base current of 250 mA and emitter current doped silicon is _______.
of 25 mA. Determine collector current. (A) 0.427eV (B) 0.326 eV
(A) 19.8 mA (B) 24.75 mA (C) 0.356 eV (D) 0.457 eV
(C) 22.8 mA (D) 26.2 mA 24. A Si sample P is doped with 1016 atoms/cm3 of boron.
20. If for a Si npn transistor the VBE = 0.8V and VCB = 0.3 V, Another sample Q of identical dimension is doped with
then the transistor is operating in the 1016 atoms/cm3 phosphorous. The ratio of electron to
(A) Inverse active mode (B) cut off region hole mobility is 4. The ratio of conductivity of sample
(C) Active region (D) Saturation region P to Q is _______.
21. In a Si sample the electron concentration drops linearly 1 1
(A) (B)
from 1020 cm-3 to 1018 cm-3 over a length of 3 mm. The 2 3
current density due to electron diffusion current is 1 2
(D­n­ = 36 cm2/s) (C) 4 (D)
3
(A) 2.8 × 104 A/cm2 (B) 1.9 × 106 A/cm2
(C) 2.8 × 10 A/cm
6 2
(D) 1.9 × 104 A/cm2 25. A silicon PN junction at T = 300°K has ND = 1012 cm-3
22. A n type silicon sample contains a donor concentration and NA = 1015 cm-3. The built in voltage is
of ND = 1018 cm-3. The minority carrier hole lifetime is (A) .297 V (B) .368 V
tpo = 12ms. (C) .397 V (D) .289 V

Answer Keys
1. C 2. D 3. A 4. D 5. B 6. D 7. B 8. A 9. C 10. C
11. C 12. A 13. D 14. B 15. D 16. A 17. A 18. A 19. B 20. C
21. B 22. A 23. D 24. C 25. C

Hints and Explanations

D 8. Since Nd > Na, material is n type n0 = ND - NA
1. Einstein’s relation = VT Choice (C) = 2.5 × 1013 - 1 × 1013
m
= 1.5 × 1013 cm3 Choice (A)
2. IC = µIE + ICBO
V 8
I C − I CBO 9. E = = = 4V/cm
µ= L 2
IE
V
µ increases, ICBO decreases Vd = mE m = d
E
µ increases means emitter doping is high Choice (D)
3. Choice (A) 105
= = 2500cm 2 /V-s  Choice (C)
4. Choice (D) 4
10. Emitter base- junction is in reverse bias condition
5. Choice (B) Collector base junction is also in reverse bias condition.
6. Choice (D) ∴ Both are in RB. So it is in cut off mode
ni 2 2  Choice (C)
7. n0 = ( ni = n0 P0 ) (V / nV −1)
p0 11. I = I 0 e T
for si, ni = 1.5 × 1010 


V 
−1 

.012 = 2.6 × 10-6 e 2 ×.026
(1.5 × 1010 )2
n0 = = 5 × 104 cm-3 Choice (B) V = 0.49 Volts Choice (C)
4.5 × 1015
 Electronic Devices Test 3 | 3.133

19. IB = 250 nA
12. W ∝ V j
IE = 25 mA
Vj = V0 + VR IC = IE - IB
W1 V0 + VR1 = 25 × 10-3 - 250 × 10-6
= IC = 24.75 mA Choice (B)
W2 V0 + VR 2
20. VBE = 0.8 V
4 µm 0.8 + 1.2 i.e., VB - VE = 0.8 V
=
W2 0.8 + 8.2 VB > VE emitter base forward bias
VCB = 0.3V
4 µm 2 VC > VB ⇒ collector junction reverse bias
=
W2 9 So transistor is in the normal active node Choice (C)
W2 = 8.48 mm Choice (A) dn
21. Jn = qDn
13. WB & IC dx
1 10 20 − 1018 
IC ∝  Choice (D) −19
WB = 1.6 × 10 × 36  −4 
 3 × 10 
IC = 1.9 × 106 A/cm2. Choice (B)
14. β =
IB 22. Recombination rate for minority and majority carrier
b are equal. The generation rate is equal to recombination
a= rate.
1+ b g = Rno = Rpo
4.6 mA n2
β= = 46 Rno = p0/Ƭpo, p0 = i
100 µA n0
b 46 n0 = ND = 1018 cm-3
a= = = 0.978 Choice (B)
1 + b 1 + 46 (1.5 × 1010 )2
p0 =
1018
15. IB = 20mA
β = 99 = 2.25 × 102 cm-3
ICO = 2mA 2.25 × 10 2
Rno = p0/Ƭpo =
IC = βIB + (1 + β)ICBO 12 × 10 −6
= 99 × 20 × 10-6 + 100 × 2 × 10-6 = 1.67 × 107 cm-3 s-1. Choice (A)
= 2.99× 10-4
NA
= 0.29 × 10-3A. Choice (D) 23. E2 - E1 = KT n
ni
Ip
16. R = NA = 6 × 1017, ni = 1.5 × 1010
I0
6 × 1017
mA E2 - E1 = 26 × 10-3 en = 0.457 eV
Ip = RI0 = 0.6 × 10 = 6 mA Choice (A) 1.5 × 1010
W
The fermilevel goes down by 0.457 eV as silicon is
IC doped with boron. Choice (D)
17. a =
IE 24. sn = nqmn, sp = pqmp
n=p
IC = aIE = 0.8 × 1.6 mA
s p mp 1
1.28 × 10-3 = = . Choice (C)
IB = IE - IC sn mn 4
= 1.6 mA - 1.28 mA = 0.32 mA. Choice (A) N N 
25. Vbi = VT n  A 2 D 
e0 er A  ni 
18. C =
d VT = 26 mV
C e0 ex 8.85 × 10 × 11.7 −12
1015 × 1012
= = = 8.6 mF. Choice (A) Vbi = .026n = .397V. Choice (C)
A d 12 × 10 −6 (1.5 × 1010 )2