0% found this document useful (0 votes)
23 views21 pages

EE222 Lect4 Inverter

This document discusses the static characteristics of MOS inverters, focusing on their voltage transfer characteristics (VTC) and noise margins. It explains the operation of CMOS inverter circuits, including the roles of NMOS and PMOS transistors, and details the propagation delay times and factors influencing switching speed. Additionally, it covers the impact of parasitic capacitance and transistor sizing on performance.

Uploaded by

Pippo
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
23 views21 pages

EE222 Lect4 Inverter

This document discusses the static characteristics of MOS inverters, focusing on their voltage transfer characteristics (VTC) and noise margins. It explains the operation of CMOS inverter circuits, including the roles of NMOS and PMOS transistors, and details the propagation delay times and factors influencing switching speed. Additionally, it covers the impact of parasitic capacitance and transistor sizing on performance.

Uploaded by

Pippo
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

CMOS Digital Integrated Circuits

Chapter 5
MOS Inverters:
Static Characteristics

Y. Leblebici

1
Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display.

Ideal Inverter

Voltage Transfer
Characteristic (VTC)
of the ideal inverter

1
Generic Inverter VTC

Voltage Transfer
Characteristic (VTC)
of a typical inverter

Noise Margins

Propagation of digital signals under the influence of noise

 VOH : VOUT,MAX when the output level is logic "1“


 VOL : VOUT,MIN when the output level is logic "0“
 VIL : VIN,MAX which can be interpreted as logic "0“
 VIH : VIN,MIN which can be interpreted as logic "1"

2
Noise Margins

Definition of
noise margins

Noise Margins

3
Noise Margins

Nominal output

Output under noise

The nominal operating region is defined as the region where the gain is less than unity !

CMOS Inverter Circuit

4
CMOS Inverter Circuit

The NMOS switch transmits the logic 0 level to the output, while the PMOS switch
transmits the logic 1 level to the output, depending on the input signal polarity.

CMOS Inverter Circuit

10

5
CMOS Inverter Circuit

11

CMOS Inverter Circuit

determine
noise
margins

inversion (switching)
threshold voltage

12

6
CMOS Inverter Circuit

nMOS transistor current-voltage characteristics

13

CMOS Inverter Circuit

pMOS transistor current-voltage characteristics

14

7
CMOS Inverter Circuit

Intersection of current-voltage surfaces of nMOS and pMOS transistors

15

CMOS Inverter Circuit

Intersection of current-voltage surfaces gives the VTC in the voltage plane

16

8
CMOS Inverter Circuit

17

CMOS Inverter Circuit

How to choose the kR ratio to achieve a desired inversion threshold voltage:

18

9
CMOS Inverter Circuit

19

Supply Voltage Scaling

VTC of a CMOS inverter


for different power supply
voltage values.

20

10
Dynamic Characteristics
of CMOS Inverter
VDD

charge-down
(W/L)p

(W/L)n
load

capacitance

Switching speed determined


by the time required to
charge-up or charge-down charge-up
the output load capacitance.

21

Definition of Delay Times

The propagation delay times


are defined as the time delay
between the 50% crossing of
the input and the
corresponding 50% crossing of
the output.

The rise time and the fall time


of the output signal are defined
as the time required for the
voltage to change from its 10%
level to its 90% level (or vice
versa).

22

11
Calculation of Propagation Delays

The falling output propagation delay is


determined by the NMOS transistor, which
starts pulling down the output node first in
saturation, and later, in linear mode.

23

Calculation of Propagation Delays

The rising output propagation delay is


determined by the PMOS transistor, which
starts pulling up the output node first in
saturation, and later, in linear mode.

24

12
Calculation of Propagation Delays

The time required by the NMOS transistor in saturation and in linear region
can be calculated separately.

25

Calculation of Propagation Delays

26

13
Calculation of Propagation Delays

The time required by the PMOS transistor in saturation and in linear region
can be calculated separately.

27

Calculation of Propagation Delays

28

14
Calculation of Propagation Delays

Summary:

The propagation delay times are proportional to the load capacitance,


and inversely proportional to the pull-up (or pull-down) transconductance.

29

Influence of Nonzero Input Rise/Fall Time

30

15
Components of the Output Load Capacitance

31

Increasing the Switching Speed

• Need to increase the amount of charge-up and


charge-down current that switches the output.
• Increase the transistor (W/L) ratios both in the
pull-up path and in the pull-down path.
• However: increasing transistor dimensions will
influence the parasitic MOSFET capacitances.

• The switching speed of a classical CMOS gate


is ultimately limited by its intrinsic delay.

32

16
Drain parasitics are mainly
responsible for the intrinsic
gate delay.

A closer look at the typical CMOS inverter

33

Parasitic Capacitance Components


Drain parasitics:

Total capacitive load:

34

17
Parasitic Capacitance Components

35

Propagation Delays

rising input
falling output

falling input
rising output

36

18
Propagation Delays

rising input
falling output

falling input
rising output

Notice that with increasing transistor width Wn


and Wp, both delays asymptotically approach
fixed limit values, independent of external
loads.
37

Propagation Delays

Intrinsic delay limits will decrease for

• Smaller gate length L


• Larger µ and Cox

But for a given technology, the limits are fixed.


38

19
Improving propagation delay times by transistor sizing

39

Improving propagation delay times by transistor sizing

Delay

large gate delays


fanout ultimately
load converge to
limit value for
large W/L !

intrinsic delay
limit value

small Channel Width


fanout
load

40

20
CMOS Inverter Layout

41

CMOS Inverter Layout

Mask layout
of the inverter

Simplified
cross-section

42

21

You might also like