Data Sheet
Customer：
Product : High Power Schottky Diode
Part No.: MBR3040CT/MBR3060CT/MBR30100CT/MBR30150CT
MBR30200CT/MBR30250CT
Issued Date: 11-Jan-11
Edition : REV.A
VIKING TECH CORPORATION VIKING TECH CORPORATION KAOHSIUNG BRANCH WUXI TMTEC CO., LTD.
光頡科技股份有限公司 光頡科技股份有限公司高雄分公司 無錫泰銘電子有限公司
No.70, Kuanfu N. Rad., No.248-3, Sin-Sheng Rd., Cian-Jhen Dist., Kaohsiung, No.1A,(Xixia Road),Machinery & Industry Park,
Hsin Chu Industrial Park, 806, Taiwan National Hi-Tech Industrial Development Zone of
Hukou Hsiang, Hsin Chu Hsien, Wuxi, Wuxi, Jiangsu Province, China
303, Taiwan Zip Code:214028
TEL:886-3-5972931 TEL:886-7-8217999 TEL:86-510-85203339
FAX:886-3-5972935•886-3-5973494 FAX:886-7-8228229 FAX:86-510-85203667•86-510-85203977
E-mail:sales@[Link] E-mail:sales@[Link] E-mail:wuxisales@[Link]
Produced by Checked Approved by Prepared by Accepted by
(QC) (QC) (QC) (Sales) (Customer)
11-Jan-11 11-Jan-11 11-Jan-11 11-Jan-11
Kris Ann J.C Liu
Tel: +886-3-597-2931／Fax: +886-3-597-2935 1
70, Kuanfu N Road, HsinChu Industrial Park, 303 Taiwan, ROC
30 Amperes High Power Schottky Barrier Rectifiers
Voltage : 40 to 250Volts
■Features
－For use in low voltage, high frequency inverters, free wheeling and polarity protection applications
－Low power loss, high efficiency
－High current capability, low forward voltage drop
－High surge capability
－Guardring for overvoltage protection
－Ultra high-speed switching
－Silicon epitaxial planar chip, metal silicon junction
－Lead-free parts meet environmental standards of MIL-STD-19500/228
■Mechanical Data
Epoxy : UL94-V0 rated flame retardant
Case：JEDEC TO-220AB molded plastic body over passivated chip
Lead :Axial lead, solderable per MIL-STD-202, Method 208 guranteed
Polarity：Color band denotes cathode end
Mounting Position : Any
Weight : Approximated 2.25 gram
Packaging : 50pcs per Tube
▓Package Dimensions in inches(millimeters): TO-220AB
▓Maximum Ratings And Electrical Characteristics
Rating at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter Symbol MBR3040CT MBR3060CT MBR30100CT MBR30150CT MBR30200CT MBR30250CT Unit
Marking Code MBR3040CT MBR3060CT MBR30100CT MBR30150CT MBR30200CT MBR30250CT
Maximum Recurrent Peak Reverse Voltage VRRM 40 60 100 150 200 250 V
Maximum RMS Voltage VRMS 28 42 70 105 140 175 V
Maximum DC Blocking Voltage VDC 40 60 100 150 200 250 V
Maximum Forward Voltage@15A, TA=25℃ 0.70 0.79 0.81 0.87 0.90 0.95
@15A, TA=125℃ VF 0.57 0.70 0.71 0.77 0.80 0.85 V
@30A, TA=25℃ 0.84 0.95 0.95 1.0 1.0 -
Operating Temperature TJ -50 ~ +150 ℃
Parameter Conditions Symbol Min. Typ. Max. Unit
Forward Rectified Current See Fig.1 IO 30 A
8.3ms single half sine-wave superimposed on
Forward Surge Current rate load (JEDEC method) IFSM 200 A
VR=VRRM , TA=25℃ 0.1
Reverse Current IR mA
VR=VRRM , TA=125℃ 10
Thermal Resistance Junction to ambient RΘJA 30 ℃/W
Diode Junction Capacitance f=1MHz and applied 4V DC reverse voltage CJ 150 pF
Storage Temperature TSTG -50 +150 ℃
Tel: +886-3-597-2931／Fax: +886-3-597-2935 2
70, Kuanfu N Road, HsinChu Industrial Park, 303 Taiwan, ROC
▓Rated and Characteristic Curve
Tel: +886-3-597-2931／Fax: +886-3-597-2935 3
70, Kuanfu N Road, HsinChu Industrial Park, 303 Taiwan, ROC
