BECE101
Basic Electronics Lab
Fall Semester 2021-2022
(Slot: L43-L44)
E-Record
by
Madepalli Mukesh Sai
21BCE5175
Submitted to
Faculty Name: Dr. Henridass A
School of Electronics Engineering
Vellore Institute of Technology,
Chennai Campus-600127
March 2022
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Ex. No:6
Date:
CHARACTERISTICS OF MOSFET
AIM:
To study the characteristics of MOSFET and plot the drain and transfer
characteristics.
EQUIPMENTS & COMPONENTS REQUIRED:
S. No. Equipments & Components Range Quantity
1 FET BFW10 1
2 DC Power supply (0-30) V 1
3 Ammeter (0-100) mA 1
4 Voltmeter 0-30V 2
5 Resistor 1 KΩ 1
6 Bread Board 1
7 Connecting wires As required
THEORY:
The Junction Field Effect Transistor is a unipolar device because its action depends on only
one type of charge carrier. Fig.1 shows the N-channel MOSFET, the three terminals of the transistor
are called the source, the gate and the drain.
Drain characteristics:
The drain characteristics are the curves drawn between drain to source voltage VDS and drain
current ID with constant gate to source voltage VGS. The drain current ID rises rapidly with VDS but
becomes constant. The drain to source voltage above which current becomes constant is known as
“pinch off voltage”. After pinch off voltage, the channel width becomes so narrow that the depletion
layers almost touch each other. The drain current passes through the small passage between these
layers. Therefore, increase in drain current is very small with V DS above pinch off voltage;
consequently, drain current remains constant
CIRCUIT DIAGRAM:
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Fig. 2
MODEL GRAPH:
DRAIN CHARACTERISTICS:
Fig. 2
Transfer characteristics:
The transfer characteristics are the curves drawn between gate to source voltage V GS and
drain current ID with constant VDS.
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As the reverse VGS is increased the cross sectional area of the channel decreases. This in turn
decreases the drain current. At some reverse gate source voltage, the depletion layer extends
completely across the channel. In this condition, the channel is cut off and the drain current reduces
to zero. The gate voltage at which the channel is cut off is called gate source cut off voltage V GS (cut-
off). The transfer characteristics are shown in figure.
PROCEDURE:
Drain characteristics:
1. Construct the circuit as shown in Fig.1.
2. Keep the VGS constant at a suitable value.
3. Increase the magnitude of VDS in various steps.
4. For each setting of VDS measure the value of ID.
5. Repeat the above procedure for various values of V GS.
6. The drain characteristics are obtained by plotting VDS Vs ID.
Transfer characteristics:
1. Construct the circuit as shown in Fig.1.
2. Keep the VDS constant at a suitable value.
3. Increase the magnitude of VGS in suitable steps.
4. For each setting of VGS measure the value of ID.
5. Repeat the above procedure for various values of V DS.
6. The transfer characteristics are obtained by plotting V GSVs ID.
TRANSFER CHARACTERISTICS:
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Fig. 3
TABULAR COLUMN:
DRAIN CHARACTERISTICS:
VGS=1.1V VGS=1.2V VGS =1.3V VGS = 1.4V VGS = 1.5V
VDS (v) ID(mA) VDS (v) ID(mA) VDS (v) ID(mA) VDS (v) ID(mA) VDS (v) ID(mA)
0 0 0 0 0 0 0 0 0 0
1 1.31 1 1.34 1 1.37 1 1.4 1 1.43
2 2.30 2 2.36 2 2.42 2 2.48 2 2.52
3 2.62 3 2.69 3 2.76 3 2.83 3 2.87
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4 2.67 4 2.74 4 2.81 4 2.88 4 2.90
5
2.70 5 2.77 5 2.84 5 2.91 5 2.95
6 2.71 6 2.78 6 2.86 6 2.92 6 2.99
7 2.73 7 2.80 7 2.87 7 2.94 7 3.01
8 2.75 8 2.81 8 2.88 8 2.93 8 3.03
9 2.76 9 2.83 9 2.89 9 2.96 9 3.04
10 2.79 10 2.85 10 2.90 10 2.97 10 3.06
Graph:
TRANSFER CHARACTERISTICS:
VDS=10V
VGS (v) Id (mA)
0 1.90
0.1 1.97
0.2 2.04
0.3 2.11
0.4 2.18
0.5 2.25
0.6 2.32
0.7 2.43
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0.8 2.55
0.9 2.61
1 2.68
1.1 2.79
1.2 2.85
1.3 2.90
1.4 2.97
1.5 3.06
1.55 3.12
CALCULATION:
1. Threshold voltage VT : Gate to source voltage at which, drain current
starts flowing.
2. Transconductance gm : Ratio of small change in drain current (Δ ID) to the
corresponding change in gate to source voltage (ΔVGS) for a constant VDS.
gm = ID / ΔVGS at constant VDS
3. Output drain resistance : It is given by the relation of small change in drain to source
voltage (Δ VDS) to the corresponding change in Drain Current (Δ ID) for a constant
VGS.
rd or ro = ΔVDS / ID at a constant VGS
RESULTS:
1. VT : ____1V____
2. gm : _3.18v
3. ro : _2.174v at (1.1v Vgs)
CONCLUSION:
Hence the value of gm is 3.18v and and ro is 2.174v at 1.1v
RESULT:
Thus the characteristics of JFET are studied.
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