aplec- in spe, cost taped Areluabality pRlewificahon ef Tes ~ Advardages of Tr's p> demiconducter Aewire - $i, Ge dilizen (Li) hase is used 90's. Atmiconductrr — monolytic De Thin, fold brtegnaled Cisee ati ‘%S BF, Thick filma Lctegeated! cbr, Can ase dag Tes ane monolync Io%?Beg Saif bo. anteganted & hiybnel cireuaile 2 make duttace most af Advardngu 2 Desedvartoges of Te gout Dd! dest die Were al we 2) ae : what i 4 Snerease in Apecd 4) Reduction tn fost 5) Reduction i device (omy) om Pb : t= (Auface Mocent Technology) itechnology 4 oeid Ser: Small Acale Sefegnation cate ad YbsT + Very barge Keahe 3; Lealsnids Ate tater 7 Dipet_eb Sete sredtion = tsa Acesbe MST 2 Medium Seate _ s O a transistor ace uted - @ BOP baad lA of. Hansistre bay a We Bawe used hirnclred 4 transtttns - ¥ | We haw sre Aundrea” ef thous czrcdi ot ternscsne tite aie Meitinduct _monolybc — oth s— Le Be chectroniz. chte “which ccne_fabancated lm nlp gute On a Ainge crystal of Aitixad:— «\c wi Gp ta il Salepaatd Abt = Pore Conducting watiuial which i4 oo to etfemn kind ae aera Component G2 Conducts. ~ i @jsihuck _felm_3 Jini i =} bur & MOS :— MOS :- unipolar device Limetal Onithe Aensdcomachssctee) a BIT bipolas Aewtce ( bipolar qiunction tyrants Eat n chien technolog 4 deal din BIT. | Lies, Hot, 1st aha ie 9h a izPap meg tine i mn hess te! hint, moctasing . ( accelertim of 24 any éntewvention ) PrUcedd. can fabnicate Vertes of Tes hanging phelographa padtterut . passive elementi (Aestatns .’ eo 2. | Behe Beipolan_-M phic, Chita o- eee ac Se Aevice consisting, rated sak teh sara Ah camels tie a & ole 2! floues é to bidlevectinal _diffuston Chasge the plenction bio the Concentration i gh Te ae OUT is _knbam at ratory charge cate loi Spiel Dude Le Tog = Are baad luncpolar _ abesrices + hay co oh catypes 2 O IPET oe MOsPET - ideas ef MasfeT , it ih a 3-teminal Aepies jee ih cousiste of soure »olrain & gek- Sncaae. ot ate ds Te of. MoasFeT the opin Lauter) oe Lp=megiin CAu eng & WRET — 3-terminal cleuice (hource ,olnain 4 gate) in | fwhich correct Conduchin sill Aepend Lepen ene. of 1c cArnitr» Lhe Operackon st JFET by ey upon. the _ Haowo of may -caiitah cumut that Ay electne. held Oe oe by calidaatigtic Lael a SE tt es)| Athin fms of H Lhe. ols position af pthtrntcad onda Lele metal omsctes, nitrites > metal ondles sete. (ts t= Cpunceas of a Sigs a this, ink checto-dewrals, Aielectric. day a, typeof matennl” 3 prepared wag Coda nate peti or__metrbs - ilk _dereening ot_Acreen Py iting. Qa this a an ink th, S md Ase” baat ally + Pibgect pldnl..scoalla eae pre . A mbahe js ie Pre ie pe | and Lis rusahs bikeOe bie Cenat at), “OT ie in tech nalags, = rs do the ae Hepeatia.——___9 Dib A Di hacthal ob 1 Chense A dike a. lara. at the a deka hatin = gat be s Aubstate™ to he mp oo ee Cruttlid tn ele 1c. B the metrl to be phatecl Ages as athens itis passed through Aa_cle , thee in ae & Wye tbat JAme fond _yoill raigrate te —_|| athode - | ae eee paeg — Heduchion ef metal Le | Of cheeatal afte & Ni, Cu, Gold are sh hid type . , acase of this method! i i un _ evia,panation @) Spratt pos thor 4dak in Lie dix -bly FET 2 BUT P - ~ prchannelMOsPeT & n-channel HOsret eff byio_olepbebron $ erbanctm ent MOSFET » pcLiff bla thik film dechnotegy thin cbr technology Ei “i 2 | | ll lallaFILM DEPOSITION BY @s A" u —D)| fit depasibion by exapatahim a when ahi __)\_aleporition eects Ln gaseous ‘ 7 ¢ Pe: 4 passed Ewough a tobah is kept in loro Mangas j heated up & gets cuaporated Ln j of a fumace “30. ddWe Ofte Va pause’ 4 will get _clepoatited ou a Aubatrate ja} the Aowrce or away from Aautee - Pe matenal turk” in 5— | decbstrate 4s sek a4 a fot 3 j—— feria then Vapbu used maha gts —lepaattecd a Stas dubstonte ard ferme a Abasele film pa cHp.— _.CSMsé) Ae Ougtal y L Pretaration, ElecRravice Cited Ailicon (648) LetChy Penge asada id pl IC, A feeed tead doula di oltage Kectibyirg. device, nd uae 4 eae. oh ts Gehan hw Aee ef Ailicon —|-CeV »Gahs ~ yet Onsdised » Hence [pitts ase ah duster “oe Gah and Ga[dtbtcoun+ Sacasc— or set Aolect. fol and ata sil wala hk OK matenal iyo repatah £G8 4 pica | “al A Byrolni Ab 2 dies 4 ected di to saith wes abyat tt. 7 “site | NGPediantoges i. Adsatages so shee is gyal th _puphalysis wibile electric =) dither ged leBodee ad the fellows ns Micon plus Hy gas. Joan 4s ebfatne ah ee “ . SEINTROL SYSTEM] es Power SuPPLY (Dp Crucible ee thal — prsobnes the tu Lal lal toa rol alate: tt bs abo broom aA ety eae) fs made at aie aad ita ke ee2 finds 1 &n__the ceppes Cai ; a | pes le rr of tite 2 thi, 4 is * oo Cructhble | ailibal nitnhe 2 fuathle aba. 2 Peller: 3 Cyt mechantim baséally hey wotedin 2 Pt, mechantim’. 4 4 Bikint control ours Centaint A gas jorme fp erkasat harm e, + putge tube . The purge feebe Cortatnd ‘a MAM ut the wie, én cotepllin. ALN OR». POLte aAupply Aatating mechantam , {-¥6 of crystal formed eG diylle. le basttalls—|}-——@Barngann's weron Du am cue gs Rei eee aradure 20ne¢ | — i _ Zon Hot__ Zone p athe ane é ole alpaca dt’ sill mets. jee a the temp cement cont A hot 2s tA Zoro - > Am fpoule Dapicts Des Ai i dees ao The. bot undid Abe tocsee “ poshion at ey a Unmelted av; dhe. tempelatice Mabilires be ~2mne~ oy. cotd Fone +s pA ambouk is Monseccol into dhe Pe obdain a single Carga Atlizen + Louwses 2ont_J(erodes fh iccusch nalled eta fsplai Miata. Losing ng 2. Coveted bg RP coil”, SILICON WAFER _PRepaRATION 4 >| sineek PoLtsHinG CLEANING !~ Kayes na 4 ne oP tee Bipleschteaied ae. Ingor__Temming 4 SUCING !— 8a dus procead, thed % —hotlom —porhin of ingot _{ hurgle Carta b6 4 tut off. Mlet cut-off 5 the. “pape. ae de. avon thin it in_aliced & produchin of ctrtelar Alices _ustll enact > —hee ie neo _ Ane. obtained Aire. te. high ce, that atresses ahautd nat 2 strength of a angle Az Sf thie stresses ane _Cncmeased Ah BLL. exigt —_dneaat 2 dongle Coyatal Snnela to ot Atese atocases, th dea pecatire is__tAucea 40 that the ate not sexceec!. the yield otreagth Of 2 cag Assignment bee Nhat ase the. Adfecti tn acs structive } Point defect van Line “get (c).Arcae Voleme — chefect ipop HW Bitolarcbeurter shoth halos pad 28 ate responathle fi a seiatin wae Made — Unites did is forisard bint. (Bae is ifp. Aeuite » fer Lilochms.) BOE in a teerrent controlled Aevite becca collects cverrest lolp) depends On ase cormveit ¢ Tp) * aloe” has hights susctohe MosFeT hai too susttehing Losses tact high am retin and Conduchin Losier ane i Af bosses hut” boser’ CorAuchm, ) Loss, i-e, it sed Poy lance opera fing, focquecncy (less than] Jo-20 kh) DS} St has“ )ne tena coeffidrnt 40 current — Aharr y ake _mecessaky ob Hing padattel f-epaatin of a Sn B1T, 4 x minority Carnes deve Aecondary boreakdoum dees aceur foe BIT wsith decrease tn Cavtterna ddeosp: Kil Ade, crerret sill treme “Ol BIT ate available up 1200V, 820A. Aeshitoss Cacdficiect fee Acai seer Unipobat, Onby ce cnby ane _ntsponatbhe a a DH ooo tp impedance device | Sis a volhage conbrot Aeutce becaiae i ofp. Ccharactenstcl Are. Aeternstined ly fiztd ich Aepends on Ie. AK ifp_tmppadance” Henze hoeceuse the ip tunchda ds revdse huis mega 0.) A9h 5e"« MASPET ds teteck I | for_high Voltage MOSFET faa Wye sal ei be j parallel ppecation xf NogPEs : A tray Master, mainity « 40x doer not munoniby Ca be ih t MOSFET ate aedahbe uph SV, 140A Anata 08. Qncdk hreakeber rnEge ED L Ahanned is inching pra bio boutoe % drain. of bias on Pe ay Sy Marbinmem Crrent fous tnthen ee he phate at the hin fin teks Sn thin, the wealatn< andl open awe [Comptes speiel [Hedhods Used '- Aoiice 2 Bie, a De tia stot aN Prpplicatiot ob Inéveases the channel 161 Minimum or no ashen potendbial 2a at the gee i cick Alm toed, Qn Ha, Whe veadshos aie [Link] A onthe cetansarT— HOLDER _ Se q SMECHANICAL SHUTTER ie Sl F van Geet ESN Cts cate Le | i a a i bik ‘ yes i (MBE i Molecubae beam Liao). Difference bho Colin’ goad 2 Epitrrdat depoaitian ss of atOind On _ the carytal 4 i pa alepodihion - » use stack Beet _Pricesding Pa elas catl Dt -heher qes—to the aubstrite7 ot) is ibeincik OEE com Loyd Do sated . trial prncess, Qrousthg A Ad ee aad por ~ Aucbshiale « reel im 4 2, the matennt Lo A will optlate én high yeaccritm tevelt 3 Aeporction CCvp) nwt dake, te ansported arte__produced he. thal fm ffucaton Cells » Fhose AA. J si ast be prowéled. Eis onechantiaak the hac shou tree _nithth io che» On thin aaa dhe pial Lill take place » his Cae, Chénaical Napocee ae srl, Ad the ip of VPE__ eaamnee Oe throgen _&y weacdanta ie —- will be Stponsthle fac dhe the ofp ef the duceptar > ZLindenstrhal (blir Pe eg adoms Create. A Macaney in the Gekottky dofect', which 4 alo tmaidereel op A St atom bran intershibal Lettine side tii a pa eld a "' Frenkel defeat” . Rawe —equalihsium —concentrechind that 20 Fern Pond clefects ane Gapertant én the lethebes af errhchion Eke Q)_ Dislocations se Line Defects '= Aalochow in _a_latthize ane Ayramic. cect at heey Can move under applet dhe, ddvaroondt bh Os more_Arslocatio; or__Combsthe vsti othea Jie Proc e1cers point -ePect _Cmdensahien, tear Aefectt ak _ Qs tnuclet fe he precipitadim oP Gnputtion Auch 4 Are__réesporaibsle fes_A tuestrt eon _cLeen in és lncatims are abo. intoduced thera sane ent i wafer duaring processing ar by the ndroduchion tad i fice. Cen centiontion 8} —On_tnapuearhy a4 a 3 Area ( planar defects. a ‘hee arta _chefects ane hota v2 sie | grain bound nies «Tei eprreacacts a Change sm ta Coyatel Oneatachin across actus plane A qmain ha a —tranaitin blo Cngstata having. b entender tim _~elationship fo Ont another Atparate grand of _.dengle a tp Allen are “wed. Area _Aefecta A boundare, wepreetst a Came anesoth stuns Preeipthater of —impumnt fourth clefect..Cavel battive 4as_A the. host Lettie tar 4 A. Lomeintration dn A Aol sot ! Most —tinpuribes Lave a retrograde dob Help anol_cthe dhat decreasts empe: etpibahin ane _¢: be brenwae. tay act at shes fora | geruatio. Dishocations_resutt fram fhe. Volt me.eave Temove the » Anachepc Etching y>Metat part «of i rofected pvrets 12 dlecign_tn_a__mete then a onetial iy Affecteal by. a tedul or a A ppeteliat pantiatenpy, & dobopy wet cichen takes Autface 20. Create Tedkes place in werhwal cliveckion. fakes place overall ante ¢Qn thin Aype , mo chemiteal vhn seill tabs place ot } requines a ken ebic. Chek. the” gubstrate phen “thin euckay knocks Out the atoms Che “material 1.21 remove eae otter heaving the substrate - [Link], eis bs alo known as ape phase etching. St aattally tovotutr Chenuzal Ad hte qase Do attack the be bangers + Again adh. back bho % reachiwe fous + 0 abe retlt nemoue the Le atoms from the deere Soe haat wll ext. Sn this case, the Dds: aid 4 wsittabe, the .forms of electrons, potions % LSM Matias dt Mela aAm Oppel: a Vertical AeBnmate 40) iy WO if belectiity — ameasiuxe oP chelate Ba tobe shtheA to the otter matenal mnie Autface Tea ee ae mateiinl Zo he : ea bkch tate — matenal uwhirh is not Be be thes os ES) i ae -atnifirm at eve ih tod ae tae 4 | bhatt ha dif bs diy bk otDIFFUSION = Bubatibrtionsl oliffiatan > | Diffusion L¥sTEM '~ —>2o0'C” ta lioo°e. > Aotid Loutee dS ye Liggsid dowtoe DS Gasegers fousee }>Smoat materdals - Re AE: D Snadeqate for define (1) 4Uph cost Rand ee fealute de ¢1um- | tmplement - 4 fotential op chemizall (2) Doves droge put: hardbing ba (8) foos Aelectivi )hafer certaminatin| (4) Potential sadam AASLICA +Wt si conwert soluble past to dnsoluble past “Theamah Oxtolahin —>Le. 2HhO—pOeOy rere aa 4 Wet Oxidahm | Plasma l A) | apasd Phase Dridabiin ¥ Fr . @ on x yaw pethog epg Ot ia basa ally, a pmedad to “Gt Spaltnen | formation by Laing A thik Layer a a [AAC wafer Ausface » i £y is pRotrraist ate of sttyped + (4) Pouitine » PRatpmaiae —_ : (b) Negative Photo reatit. _ Ot wetll convert tinsoleble patt into soluble= OasAation = ve | os an ii)| the ondle Layer ach as an difficatn in| To pital cite lath a | CHloo doc it protect 2)->Check. postin the wast Can bo emo L rae ope hs ttehed exter ly tg Ia chemical solvent ora dry etching « We Obtain an-ouvdle notnclovd Finally sik Whe process of Combining “Ai ustth Ongygen ide va “hed, 9 HO dows netd on onde Layer 2 be _nesdl _onidlation faye » £0 ad tos trove Asolation. Zhe ontole 4S fincte ng z : foyer C —_rear midis eye) Le all fee ae i | Natune ef Ontclant — OY Procexting Tempenature. DI Plow mte_ of. _Aaurce _ «eaeMia haially. the Can be placect jak inl Anordis to charge ‘ci elecronic Lt A Coactatining a deatoch Lonpusrity is Lonised th An Mn sOurce » the Gutatid. ard xepellel | a marrow apudibe + the td inthe daeget Fetes E foce that _direch Cons of deste Apectea binge the Jone” to by sshricbe ene chic coke cogltal Le sable Mata ehbesice wtih i Ahwae an_ace @, the aa ta rget 2 Shan[emp 4 eniatin: by Focee chectron is a, pare. Hoe iF Ls_dhivected «or sbeilems Le— > Popesee Censunphion. De (oni Ile ak Coal {ta the aliencte. Conpoucuti _. igh Complerthy is thue incase of Ic! a Fe 1 a s bac ae _dliffrult to fobniate uaterees abacaah IL Lenape cre he LAMES jn dabnizatin : ~p-Tch_ase mave_delitéte to Wardle than thathypbsed Tes & Oa) bhatt ate the Hifferences b)o mowolittur tas | thick film & thin film Teo 2(Bupolas 5 mins $ticksigyres Kehoy_dif bo BOT 2, MOseeTy if f yen kata be z . On nae! tf, phatolithegraphe, . {Capacities § Arde. Lp: Amplifiox App. itahions CapPage x wae : iy site | ep, plea Linpurnty ae Coumas "6 “eaas ocMpg t= ¢ Complemertany mos). i pothin ayer a(Nas anda) pereiarite than ee aes aa a 1A Likes peditzo ae 2 ae 4% ie [aie es sen apiain gta 48, =. har?! Nemos a ad Stetninal dosece’ Gate & Dual We eae. Pipe Of sethttate tress Of nm mas. Qrease ot _C-Mas)_