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RIE Series

The Reactive Ion Etching system (Ion Etch 150) is designed for nanofabrication, offering high etch anisotropy and material selectivity for various materials. It features a compact design, adjustable parameters, and options for manual or automatic operation, making it suitable for R&D and low volume production. Key applications include semiconductor devices, micro and nano fabrication, MEMS, sensors, and solar cells.

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avinashmukherjee143
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21 views4 pages

RIE Series

The Reactive Ion Etching system (Ion Etch 150) is designed for nanofabrication, offering high etch anisotropy and material selectivity for various materials. It features a compact design, adjustable parameters, and options for manual or automatic operation, making it suitable for R&D and low volume production. Key applications include semiconductor devices, micro and nano fabrication, MEMS, sensors, and solar cells.

Uploaded by

avinashmukherjee143
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

R IE

Reactive Ion Etching system

Our Reactive Ion Etching system (Ion Etch 150) is a compact system for use in
nanofabrication applications. RIE combines both physical sputtering, and chemical
activity of the reacting species to ensure high etch anisotropy as well as greater
material selectivity. This technique can be used to etch silicon based materials such
as Polysilicon, Amorphous Silicon, Silicon Oxide, Nitrides, etc., III-V materials, various
dielectrics, sputtered metal films, photoresists and polymers. The small footprint, low
cost, ease of use and superior performance makes the tool ideal for a wide range of
applications for R&D and low volume production.
CHAMBER CONFIGURATIONS

System configuration with System configuration with


external gas manifold integrated gas manifold
and pumping

Electrode with gas showerhead Gas Manifold

SPECIFICATIONS

CHAMBER SIZE 400 mm ( ) x 350 mm (h)

SUBSTRATE SIZE 6” diameter circular wafer

SUBSTRATE TEMPERATURE Up to 300° C. Substrate cooling option available

POWER SUPPLY RF - 13.56 MHz for plasma generation

PUMPING Rotary and Roots. Turbo molecular pump option

MFC CONTROLLED GAS LINES 4 to 8 lines

ADDITIONAL OPTIONS Wet/Dry Scrubber and process gas lines from gas bank to chamber
CONTROL OPTIONS

Manual operation Auto operation

Auto mode screens


FE ATURES APPLICAT IONS

- Low cost of ownership - Semiconductor devices

- Optimi ze d showerhead design for uniform - Micro and Nano fabric ation
gas distribution
- MEMS and NEMS
- Adjustable source to shower head distance
- Sensors
- Flu orine and Chlorine based chemist r y
o red - Solar cell s

- User friendly interfa c e - Energy device s

- Fully interloc ked for operator and machin e


safety

L AYO UT

All dimensions in mm

Site No. 17, Phase 1, Peenya Industrial Area, Bengaluru 560058,


Karnataka, India. Phone: +91-80-41931000
Email: [email protected]
Website: www.hhvadvancedtech.com

Manufacturing Unit:
Site No. 31-34 & 37, Phase1,
KIADB Industrial Area, Dabaspet, Bengaluru Rural 562 111,
Karnataka, India, Phone: +91-80-66703700

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