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Tutorial 7

This document is a tutorial for the B. Tech. Sem. II students in Electronics & Communication Engineering, focusing on Optoelectronics-Device. It includes multiple-choice questions, descriptive questions, and calculations related to photo detectors, quantum efficiency, and photo currents. The tutorial aims to enhance understanding of various types of photo-diodes and their operational principles.

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42 views1 page

Tutorial 7

This document is a tutorial for the B. Tech. Sem. II students in Electronics & Communication Engineering, focusing on Optoelectronics-Device. It includes multiple-choice questions, descriptive questions, and calculations related to photo detectors, quantum efficiency, and photo currents. The tutorial aims to enhance understanding of various types of photo-diodes and their operational principles.

Uploaded by

mindyourownbusiness396
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd

Department of Electronics & Communication Engineering

(Faculty of Technology, Dharmsinh Desai University, Nadiad)


Academic Year : 2024 - 2025

TUTORIAL – 7

Subject : PHYSICS (Optoelectronics-Device )


Class : B. Tech. Sem.II (EC/IT)
h = 6.626 × 10-34 J/Hz, c = 3 × 108 m/sec, q = 1.6 × 10-19 C
Q.1 Select the most appropriate option.
(1) Which material from the following is used as a photo detector at 1.5 µm?
(a) Si, (b) SiGe, (c) InGaAs (d) None
(2) Which of the following detectors give amplified output?
(a) pn photo diode, (b) p-i-n photo diode, (c) avalanche photo diode
(3) How can the quantum efficiency of a photo diode be improved? Show with necessary
equations.
(4) State true/false with justification, “The quantum efficiency is independent of the power
level falling on the detector at a given photon energy”.
(5) State true/false with justification, “The quantum efficiency decreases as wavelength
increases.”
Q.2 Do as Directed (Descriptive Answers, Examples etc)
(1) Distinguish between a p-n diode, a p-i-n diode, and an APD. Is it possible to make these
three types of photo-diodes using the same semiconductor?
Q.3 Do as Directed (Descriptive Answers, Examples etc)
(1) A p-n photo diode has a quantum efficiency of 70% for photons of energy 1.52 × 10-19 J.
Calculate (a) the wavelength at which the diode is operating and (b) the optical power
required to achieve a photo current of 3 µA when the wavelength of incident photons is
that calculated in part (a).
(2) A p-i-n photo-diode, on an average, generates one- EHP per two incident photons at a
wavelength of 0.85 µm. Assuming all the photo-generated electrons are collected,
calculate (a) the quantum efficiency of the diode; (b) the maximum possible band gap
energy in eV of the semiconductor, assuming the incident wavelength to be a long-
wavelength cut-off and (c) the mean output photo current when the incident optical power
is 10 µW. .
(3) Photons of wavelength 0.90 um are incident on a p-n photo diode at a rate of 5 × 1010
/sec and, on an average, the electrons are collected at the terminals of the diode at the
rate of 2 × 1010 /sec. Calculate (a) the quantum efficiency and (b) reponsivity of the diode
at this wavelength.
(4) An APD has a quantum efficiency of 40% at 1.3% µm when illuminated with optical
power of 0.3 µW at this wavelength, it produces an output photo current of 6 µA
after avalanche gain. Calculate the multiplication factor of the diode.
(5) Calculate the responsivity of an ideal p-n photo diode at the following wavelengths:
(a) 0.85 µm, (b) 1.30 µ m and (c) 1.55µm

* * *

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