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Electron Mobility in Silicon Semiconductors

This document contains 10 questions about semiconductor physics concepts including: 1) Calculating the resistivities of intrinsic Si and GaAs. 2) Determining electron mobility at different temperatures based on lattice scattering. 3) Finding mobility when two scattering mechanisms are present. 4) Finding properties of silicon samples with different impurity concentrations. 5) Relating resistivity and mobility ratio for a semiconductor. 6) Measuring resistivity using a four-point probe. 7) Analyzing Hall measurement data to determine sample properties. 8) Relating sample resistances with different doping levels. 9) Evaluating built-in field for non-uniform doping. 10) Calculating

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Tushar Gupta
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1K views1 page

Electron Mobility in Silicon Semiconductors

This document contains 10 questions about semiconductor physics concepts including: 1) Calculating the resistivities of intrinsic Si and GaAs. 2) Determining electron mobility at different temperatures based on lattice scattering. 3) Finding mobility when two scattering mechanisms are present. 4) Finding properties of silicon samples with different impurity concentrations. 5) Relating resistivity and mobility ratio for a semiconductor. 6) Measuring resistivity using a four-point probe. 7) Analyzing Hall measurement data to determine sample properties. 8) Relating sample resistances with different doping levels. 9) Evaluating built-in field for non-uniform doping. 10) Calculating

Uploaded by

Tushar Gupta
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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TUTORIAL:4 Q:1FindtheresistivitiesofintrinsicSiandintrinsicGaAsat300K. Q : 2 Assume that the mobility of electrons in silicon at T = 300 K is n= 1300 cm2/Vs.

Also
assumethatthemobilityismainlylimitedbylatticescattering.Determinetheelectronmobilityat (a)T=200Kand(b)T=400K.

Q:3Twoscatteringmechanismsexistinasemiconductor.Ifonlythefirstmechanismispresent,
themobilitywillbe250cm2/Vs.Ifonlythesecondmechanismispresent,themobilitywillbe500 cm2/Vs.Determinethemobilitywhenbothscatteringmechanismsexistatthesametime.

Q:4Findtheelectronandholeconcentrations,mobilitiesandresistivitiesossiliconsamplesat
300K,foreachofthefollowingimpurityconcentrations:(a)51015boronatoms/cm3;(b)21016 boronatoms/cm3and1.51016arsenicatoms/cm3;and(c)51015boronatoms/cm3,1017arsenic atoms/cm3,and1017galliumatoms/cm3.

Q:5Forasemiconductorwithaconstantmobilityratiobn/p>1independentofimpurity
concentration, Find the maximum resistivity m in terms of the intrinsic resistivity i and the mobilityratio.

Q:6Afourpointprobe(withprobespacingof0.5mm)isusedtomeasuretheresistivityofap
typesiliconsample.Findtheresistivityofthesampleifitsdiameteris200mmanditsthicknessis 50m.Thecontactcurrentis1mA,andthemeasuredvoltagebetweentheinnertwoprobesis 10mV.

Q : 7 given a silicon sample of unknown doping, Hall measurement provides the following
information:W=0.05cm,A=1.6103cm2,I=2.5mA,andthemagnitudefieldis30nT(1T=104 Wb/ cm2 ). If a Hall voltage of +10 mV is measured, find the Hall coefficient, conductivity type, majoritycarrierconcentration,resistivity,andmobilityofthesemiconductorsample.

Q : 8 A semiconductor is doped with ND ( ND >> ni ) and has aresistance R1. The same
semiconductor is then doped with an unknown amount of acceptors NA ( NA >>ND ), yielding a resistanceof0.5R1.FindNAintermsofNDifDn/Dp=50.

Q:9AnintrinsicSisampleisdopedwithdonorsfromonesidesuchthatND=N0 exp(ax).(a)
Findanexpressionforthebuiltinfield(x)atequilibriumovertherangeforwhichND>>ni.(b) Evaluate(x)whena=1m1.

Q : 10 An ntype Si slice of a thickness L is inhomogeneously doped with phosphorus donor


whoseconcentrationprofileisgivenbyND(x)=N0 +(NL N0)(x/L).Whatistheformulaforthe electric potential difference between the front and the back surfaces when the sample is at thermalandelectricequilibriaregardlessofhowthemobilityanddiffusivityvarieswithposition? What is the formula for the equilibrium electric field at a plane x from the front surface for a constantdiffusivityandmobility?

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