2STW4468
High power NPN epitaxial planar bipolar transistor
Features
■ High breakdown voltage VCEO = 140 V
■ Complementary to 2STW1695
■ Fast-switching speed
■ Typical ft = 20 MHz
■ Fully characterized at 125 oC
3
2
Applications 1
■ Audio power amplifier TO-247
Description
Figure 1. Internal schematic diagram
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Recommended for 70 W to 100 W high fidelity
audio frequency amplifier output stage.
Table 1. Device summary
Order code Marking Package Packaging
2STW4468 2STW4468 TO-247 Tube
October 2008 Rev 4 1/9
www.st.com 9
Electrical ratings 2STW4468
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) 200 V
VCEO Collector-emitter voltage (IB = 0) 140 V
VEBO Emitter-base voltage (IC = 0) 6 V
IC Collector current 10 A
ICM Collector peak current (tP < 5 ms) 20 A
Ptot Total dissipation at Tc = 25 °C 100 W
Tstg Storage temperature -65 to 150 °C
TJ Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case ____max 1.25 °C/W
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2STW4468 Electrical characteristics
2 Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
Collector cut-off current
ICBO VCB = 200 V 0.1 µA
(IE = 0)
Emitter cut-off current
IEBO VEB = 6 V 0.1 µA
(IC = 0)
Collector-emitter
V(BR)CEO(1) I = 50 mA
breakdown voltage (IB = 0) C
140 V
Collector-base breakdown
V(BR)CBO IC = 100 µA 200 V
voltage (IE = 0)
Emitter-base breakdown
V(BR)EBO (1) IE = 1 mA 6 V
voltage (IC = 0)
Collector-emitter IC = 5 A IB = 500 mA 0.5 V
VCE(sat) (1)
saturation voltage IC = 7 A IB = 700 mA 0.7 V
VBE Base-emitter voltage VCE = 5 V IC = 5 A 1.3 V
IC = 3 A VCE = 4 V 70 140
hFE DC current gain
IC = 5 A VCE = 4 V 50
fT Transition frequency IC = 0.5 A VCE = 12 V 20 MHz
Collector-base
CCBO capacitance VCB = 10 V f = 1 MHz 150 pF
(IE = 0)
Resistive Load
ton Turn-on time VCC = 60 V IC = 5 A 0.22 µs
tstg Storage time IB1 = -IB2 = 0.5 A 4.3 µs
tf Fall time 0.5 µs
1. Pulse duration = 300 µs, duty cycle ≤ 1.5 %
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Electrical characteristics 2STW4468
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Output characteristics
Figure 4. DC current gain Figure 5. Collector-emitter saturation
voltage
Figure 6. Base-emitter voltage Figure 7. Base-emitter voltage
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2STW4468 Electrical characteristics
2.2 Test circuit
Figure 8. Resistive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
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Package mechanical data 2STW4468
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com
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2STW4468 Package mechanical data
TO-247 Mechanical data
Dim. mm.
Min. Typ Max.
A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.45
L 14.20 14.80
L1 3.70 4.30
L2 18.50
øP 3.55 3.65
øR 4.50 5.50
S 5.50
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Revision history 2STW4468
4 Revision history
Table 5. Document revision history
Date Revision Changes
23-Oct-2006 1 Initial release
09-Feb-2007 2 New graphics
20-Feb-2007 3 Document status promoted from preliminary data to datasheet.
13-Oct-2008 4 Content reworked to improve readability, no technical changes.
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2STW4468
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