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2STC4467

The 2STC4467 is a high power NPN epitaxial planar bipolar transistor with a breakdown voltage of 120 V and fast-switching speed, suitable for audio power amplifier applications. It is characterized for operation at 125 °C and features good gain linearity. The device is available in a TO-3P package and complies with environmental requirements through ECOPACK® packaging.

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0% found this document useful (0 votes)
19 views7 pages

2STC4467

The 2STC4467 is a high power NPN epitaxial planar bipolar transistor with a breakdown voltage of 120 V and fast-switching speed, suitable for audio power amplifier applications. It is characterized for operation at 125 °C and features good gain linearity. The device is available in a TO-3P package and complies with environmental requirements through ECOPACK® packaging.

Uploaded by

ndyzhfraptri
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

2STC4467

High power NPN epitaxial planar bipolar transistor

Features
■ High breakdown voltage VCEO = 120 V
■ Complementary to 2STA1694
■ Fast-switching speed
■ Typical ft = 20 MHz

■ Fully characterized at 125 oC


3
2
Applications 1

■ Audio power amplifier TO-3P

Description
Figure 1. Internal schematic diagram
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.

Table 1. Device summary


Order code Marking Package Packaging

2STC4467 2STC4467 TO-3P Tube

April 2008 Rev 2 1/7


www.st.com 7
Electrical ratings 2STC4467

1 Electrical ratings

Table 2. Absolute maximum rating


Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) 120 V
VCEO Collector-emitter voltage (IB = 0) 120 V
VEBO Emitter-base voltage (IC = 0) 6 V
IC Collector current 8 A
ICM Collector peak current (tP < 5 ms) 16 A
PTOT Total dissipation at Tc = 25 °C 80 W
Tstg Storage temperature -65 to 150 °C
TJ Max. operating junction temperature 150 °C

Table 3. Thermal data


Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case ______________ __max 1.563 °C/W

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2STC4467 Electrical characteristics

2 Electrical characteristics

(Tcase = 25 °C; unless otherwise specified)

Table 4. Electrical characteristics


Symbol Parameter Test conditions Min. Typ. Max. Unit
Collector cut-off current
ICBO VCB = 120 V 10 µA
(IE = 0)
Emitter cut-off current
IEBO VEB = 6 V 10 µA
(IC = 0)
Collector-emitter breakdown
V(BR)CEO(1) voltage (I = 0) IC = 50 mA 120 V
B

Collector-base breakdown
V(BR)CBO IC = 100 µA 120 V
voltage (IE = 0)
Emitter-base breakdown voltage
V(BR)EBO(1) (I = 0) IE = 1 mA 6 V
C

Collector-emitter saturation
VCE(sat) (1) IC = 3 A IB = 300 mA 1.5 V
voltage
hFE DC current gain IC = 3 A V CE = 4 V 70 140
fT Transition frequency IC = 0.5 A V CE = 12 V 20 MHz
1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%

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Package mechanical data 2STC4467

3 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®


packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com

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2STC4467 Package mechanical data

TO-3P Mechanical data

mm.
DIM.
MIN. TYP MAX.
A 4.6 5
A1 1.45 1.50 1.65
A2 1.20 1.40 1.60
b 0.80 1 1.20
b1 1.80 2.20
b2 2.80 3.20
c 0.55 0.60 0.75
D 19.70 19.90 20.10
D1 13.90
E 15.40 15.80
E1 13.60
E2 9.60
e 5.15 5.45 5.75
L 19.50 20 20.50
L1 3.50
L2 18.20 18.40 18.60
P 3.10 3.30
Q 5
Q1 3.80

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Revision history 2STC4467

4 Revision history

Table 5. Document revision history


Date Revision Changes

22-Nov-2007 1 Initial release


30-Apr-2008 2 Document status promoted from preliminary data to datasheet.

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2STC4467

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