STP16NE06
® STP16NE06FP
N - CHANNEL 60V - 0.08 Ω - 16A - TO-220/TO-220FP
STripFET POWER MOSFET
PRELIMINARY DATA
TYPE V DSS R DS(on) ID
STP16NE06 60 V < 0.100 Ω 16 A
STP16NE06FP 60 V < 0.100 Ω 11 A
■ TYPICAL RDS(on) = 0.08 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ 175oC OPERATING TEMPERATURE
■ HIGH dV/dt CAPABILITY
3 3
■ APPLICATION ORIENTED 2 2
CHARACTERIZATION 1 1
DESCRIPTION TO-220 TO-220FP
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size"
process whereby a single body is implanted on a
strip layout structure. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and INTERNAL SCHEMATIC DIAGRAM
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
■ DC MOTOR CONTROL
■ DC-DC & DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP16NE06 STP16NE06FP
V DS Drain-source Voltage (V GS = 0) 60 V
V DGR Drain- gate Voltage (R GS = 20 kΩ) 60 V
V GS Gate-source Voltage ± 20 V
ID Drain Current (continuous) at T c = 25 o C 16 11 A
ID Drain Current (continuous) at T c = 100 o C 10 7 A
IDM (•) Drain Current (pulsed) 64 64 A
P tot Total Dissipation at T c = 25 o C 60 30 W
o
Derating Factor 0.4 0.2 W/ C
V ISO Insulation Withstand Voltage (DC) 2000 V
dV/dt Peak Diode Recovery voltage slope 6 V/ns
o
T stg Storage Temperature -65 to 175 C
o
Tj Max. Operating Junction Temperature 175 C
(•) Pulse width limited by safe operating area (1) ISD ≤ 16 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
’ New RDS (on) spec. starting from JULY 98
June 1998 1/9
STP16NE06/FP
THERMAL DATA
TO-220 TO-220FP
o
R thj-case Thermal Resistance Junction-case Max 2.5 5 C/W
o
R thj-amb Thermal Resistance Junction-ambient Max 62.5 C/W
o
R thc-sink Thermal Resistance Case-sink Typ 0.5 C/W
o
Tl Maximum Lead Temperature For Soldering Purpose 300 C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I AR Avalanche Current, Repetitive or Not-Repetitive 16 A
(pulse width limited by T j max)
E AS Single Pulse Avalanche Energy 80 mJ
(starting T j = 25 o C, I D = I AR , VDD = 25 V)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V (BR)DSS Drain-source I D = 250 µA VGS = 0 60 V
Breakdown Voltage
I DSS Zero Gate Voltage V DS = Max Rating 1 µA
Drain Current (V GS = 0) V DS = Max Rating T c = 125 10 µA
o
C
I GSS Gate-body Leakage V GS = ± 20 V ± 100 nA
Current (V DS = 0)
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V GS(th) Gate Threshold V DS = VGS ID = 250 µA 2 3 4 V
Voltage
R DS(on) Static Drain-source On V GS = 10V ID = 8 A 0.080 0.100 Ω
Resistance
ID(on) On State Drain Current V DS > I D(on) x R DS(on)max 16 A
V GS = 10 V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g fs (∗) Forward V DS > I D(on) x R DS(on)max I D =8 A 6 S
Transconductance
C iss Input Capacitance V DS = 25 V f = 1 MHz V GS = 0 760 1000 pF
C oss Output Capacitance 100 140 pF
C rss Reverse Transfer 30 45 pF
Capacitance
2/9
STP16NE06/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t d(on) Turn-on Time V DD = 30 V ID = 8 A 10 80 ns
tr Rise Time R G =4.7 W V GS = 10 V 35 40 ns
Qg Total Gate Charge V DD = 40 V I D = 16 A VGS = 10 V 20 30 nC
Q gs Gate-Source Charge 5 nC
Q gd Gate-Drain Charge 7 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t r(Voff) Off-voltage Rise Time V DD = 48 V I D = 16 A 7 10 ns
tf Fall Time R G =4.7 Ω V GS = 10 V 18 25 ns
tc Cross-over Time 30 45 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I SD Source-drain Current 16 A
I SDM (•) Source-drain Current 64 A
(pulsed)
V SD (∗) Forward On Voltage I SD = 16 A VGS = 0 1.5 V
t rr Reverse Recovery I SD = 16 A di/dt = 100 A/µs 70 ns
o
Time V DD = 30 V T j = 150 C
Q rr Reverse Recovery 0.21 µC
Charge
I RRM Reverse Recovery 6 A
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area for TO-220 Safe Operating Area for TO-220FP
3/9
STP16NE06/FP
Thermal Impedance for TO-220 Thermal Impedance for TO-220FP
Output Characteristics Transfer Characteristics
Transconductance Static Drain-source On Resistance
4/9
STP16NE06/FP
Gate Charge vs Gate-source Voltage Capacitance Variations
Normalized Gate Threshold Voltage vs Normalized On Resistance vs Temperature
Temperature
Source-drain Diode Forward Characteristics
5/9
STP16NE06/FP
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9
STP16NE06/FP
TO-220 MECHANICAL DATA
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
E
A
D
C
D1
L2
F1
G1
H2
G
Dia.
F
F2
L5
L9
L7
L6 L4
P011C
7/9
STP16NE06/FP
TO-220FP MECHANICAL DATA
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
E
A
D
B
L3
L6
L7
F1
¯
G1
G
H
F2
1 2 3
L2 L4
8/9
STP16NE06/FP
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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