2 SD 2562
2 SD 2562
2SD2562
B
Darlington (7 0Ω )
E
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1649) Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol 2SD2562 Unit Symbol Conditions 2SD2562 Unit
0.8±0.2
15.6±0.2 5.5±0.2
VCBO 150 V ICBO VCB=150V 100max µA 3.45 ±0.2
5.5
9.5±0.2
VEBO 5 V V(BR)CEO IC=30mA 150min V
23.0±0.3
IC 15 A hFE VCE=4V, IC=10A 5000min∗ ø3.3±0.2
a
IB 1 VCE(sat) IC=10A, IB=10mA 2.5max V
1.6
A b
3.0
PC 85(Tc=25°C) W VBE(sat) IC=10A, IB=10mA 3.0max V
3.3
Tj 150 °C fT VCE=12V, IE=–2A 70typ MHz 1.75 0.8
16.2
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 120typ pF 2.15
+0.2
1.05
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
-0.1
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
40 4 10 10 –5 10 –10 0.8typ 4.0typ 1.2typ
B C E b. Lot No.
3mA
15 3 15
A
mA
50mA
2m 1. 0m A
1.5
0. 8m A
10 2 10
0.5mA I C =.15A
mp)
emp
mp)
e Te
I C =.10A
eT
e Te
Cas
(Cas
5
(Cas
I B =0.3mA 1 I C =.5A 5
˚C (
25˚C
–30˚C
0 0 0 125
0 2 4 6 0.2 0.5 1 5 10 50 100 200 0 1 2 2.2
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
50000 50000 3.0
5˚C
12
DC Cur r ent Gai n h F E
Typ
1.0
10000 10000
˚C
25
5000 5000 0.5
˚C
–30
1000 1000
80
Cu t-off Fre quen cy f T (M H Z )
60
W
ith
In
60
fin
ite
40
he
at
si
nk
40
20
20
Without Heatsink
3.5
0 0
–0.02 –0.05 –01 –0.5 –1 –5 –10 0 25 50 75 100 125 150
Emitter Current I E (A) Ambient Temperature Ta(˚C)
160