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2 SD 2562

The document provides specifications for the 2SD2562 silicon NPN Darlington transistor, including absolute maximum ratings, electrical characteristics, and typical switching characteristics. It is designed for audio applications, series regulators, and general purposes, with a maximum collector current of 15A and a voltage rating of 150V. Additionally, it includes information on thermal resistance and various characteristic curves for performance evaluation.

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Karen Cruz
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0% found this document useful (0 votes)
34 views1 page

2 SD 2562

The document provides specifications for the 2SD2562 silicon NPN Darlington transistor, including absolute maximum ratings, electrical characteristics, and typical switching characteristics. It is designed for audio applications, series regulators, and general purposes, with a maximum collector current of 15A and a voltage rating of 150V. Additionally, it includes information on thermal resistance and various characteristic curves for performance evaluation.

Uploaded by

Karen Cruz
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Equivalent circuit C

2SD2562
B

Darlington (7 0Ω )
E

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1649) Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol 2SD2562 Unit Symbol Conditions 2SD2562 Unit

0.8±0.2
15.6±0.2 5.5±0.2
VCBO 150 V ICBO VCB=150V 100max µA 3.45 ±0.2

VCEO 150 V IEBO VEB=5V 100max µA

5.5
9.5±0.2
VEBO 5 V V(BR)CEO IC=30mA 150min V

23.0±0.3
IC 15 A hFE VCE=4V, IC=10A 5000min∗ ø3.3±0.2
a
IB 1 VCE(sat) IC=10A, IB=10mA 2.5max V

1.6
A b

3.0
PC 85(Tc=25°C) W VBE(sat) IC=10A, IB=10mA 3.0max V

3.3
Tj 150 °C fT VCE=12V, IE=–2A 70typ MHz 1.75 0.8

16.2
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 120typ pF 2.15
+0.2
1.05
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
-0.1

5.45±0.1 5.45±0.1 0.65 +0.2


-0.1 3.35
■Typical Switching Characteristics (Common Emitter) 1.5 4.4 1.5

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
40 4 10 10 –5 10 –10 0.8typ 4.0typ 1.2typ
B C E b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sa t ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)


10mA (V CE =4V)
Collector-Emitter Saturation Voltage V C E (s at) (V)

3mA
15 3 15
A
mA
50mA

2m 1. 0m A
1.5

0. 8m A

Collector Current I C (A)


Collector Current I C (A)

10 2 10

0.5mA I C =.15A

mp)
emp

mp)
e Te
I C =.10A

eT

e Te
Cas

(Cas
5

(Cas
I B =0.3mA 1 I C =.5A 5

˚C (

25˚C

–30˚C
0 0 0 125
0 2 4 6 0.2 0.5 1 5 10 50 100 200 0 1 2 2.2
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics


θ j- a ( ˚ C/ W)

(V C E =4V) (V C E =4V)
50000 50000 3.0

5˚C
12
DC Cur r ent Gai n h F E

DC Cur r ent Gai n h F E

Transient Thermal Resistance

Typ
1.0
10000 10000
˚C
25
5000 5000 0.5

˚C
–30

1000 1000

500 500 0.1


02 0.5 1 5 10 15 02 0.5 1 5 10 15 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating


(V C E =12V)
80 100
Maxim um Power Dissipatio n P C (W)

80
Cu t-off Fre quen cy f T (M H Z )

60
W
ith
In

60
fin
ite

40
he
at
si
nk

40

20
20

Without Heatsink
3.5
0 0
–0.02 –0.05 –01 –0.5 –1 –5 –10 0 25 50 75 100 125 150
Emitter Current I E (A) Ambient Temperature Ta(˚C)

160

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