® TN8, TS8 and TYNx08 Series

SENSITIVE & STANDARD 8A SCRs

MAIN FEATURES: A

Symbol Value Unit

G
IT(RMS) 8 A
K

VDRM/VRRM 600 to 1000 V A A

IGT 0.2 to 15 mA
K A
DESCRIPTION G
K
DPAK A IPAK
Available either in sensitive (TS8) or standard (TS8-B)
G
(TS8-H)
(TN8 / TYN) gate triggering levels, the 8A SCR (TN8-B) (TN8-H)
series is suitable to fit all modes of control, found
A A
in applications such as overvoltage crowbar
protection, motor control circuits in power tools
and kitchen aids, inrush current limiting circuits,
capacitive discharge ignition and voltage
regulation circuits... K K
Available in through-hole or surface-mount A A
G G
packages, they provide an optimized performance TO-220AB TO-220AB
in a limited space area. (TS8-T) (TYNx)

ABSOLUTE RATINGS (limiting values)

Symbol Parameter Value Unit

IT(RMS) RMS on-state current (180° conduction angle) Tc = 110°C 8 A

IT(AV) Average on-state current (180° conduction angle) Tc = 110°C 5 A
TS8/TN8 TYN
ITSM Non repetitive surge peak on-state tp = 8.3 ms 73 100
current Tj = 25°C A
tp = 10 ms 70 95

I ²t I²t Value for fusing tp = 10 ms Tj = 25°C 24.5 45 A2S

Critical rate of rise of on-state current
dI/dt IG = 2 x IGT , tr ≤ 100 ns F = 60 Hz Tj = 125°C 50 A/µs

IGM Peak gate current tp = 20 µs Tj = 125°C 4 A

PG(AV) Average gate power dissipation Tj = 125°C 1 W

Tstg Storage junction temperature range - 40 to + 150

°C
Tj Operating junction temperature range - 40 to + 125

VRGM Maximum peak reverse gate voltage (for TN8 & TYN only) 5 V

April 2002 - Ed: 4A 1/9

TN8, TS8 and TYNx08 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
■ SENSITIVE
Symbol Test Conditions TS820 Unit
IGT MAX. 200
VD = 12 V RL = 140 Ω µA
VGT MAX. 0.8 V
VGD VD = VDRM RL = 3.3 kΩ RGK = 220 Ω Tj = 125°C MIN. 0.1 V
VRG IRG = 10 µA MIN. 8 V
IH IT = 50 mA RGK = 1 kΩ MAX. 5 mA
IL IG = 1 mA RGK = 1 kΩ MAX. 6 mA
dV/dt VD = 65 % VDRM RGK = 220 Ω Tj = 125°C MIN. 5 V/µs
VTM ITM = 16 A tp = 380 µs Tj = 25°C MAX. 1.6 V
Vt0 Threshold voltage Tj = 125°C MAX. 0.85 V
Rd Dynamic resistance Tj = 125°C MAX. 46 mΩ
IDRM Tj = 25°C MAX. 5 µA
VDRM = VRRM RGK = 220 Ω
IRRM Tj = 125°C 1 mA

■ STANDARD
Symbol Test Conditions TN805 TN815 TYNx08 Unit
IGT MIN. 0.5 2 2 mA
VD = 12 V RL = 33 Ω MAX. 5 15 15
VGT MAX. 1.3 V
VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C MIN. 0.2 V

IH IT = 100 mA Gate open MAX. 25 40 30 mA

IL IG = 1.2 IGT MAX. 30 50 70 mA

dV/dt VD = 67 % VDRM Gate open Tj = 125°C MIN. 50 150 150 V/µs

VTM ITM = 16 A tp = 380 µs Tj = 25°C MAX. 1.6 V
Vt0 Threshold voltage Tj = 125°C MAX. 0.85 V
Rd Dynamic resistance Tj = 125°C MAX. 46 mΩ
IDRM Tj = 25°C MAX. 5 µA
VDRM = VRRM
IRRM Tj = 125°C 2 mA

THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth(j-c) Junction to case (DC) 20 °C/W
Rth(j-a) Junction to ambient (DC) TO-220AB 60 °C/W
IPAK 100
S = 0.5 cm² DPAK 70

S= copper surface under tab

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 TN8, TS8 and TYNx08 Series

PRODUCT SELECTOR

Voltage (xxx)
Part Number Sensitivity Package
600 V 700 V 800 V 1000 V
TN805-xxxB X X 5 mA DPAK
TN805-xxxH X X 5 mA IPAK
TN815-xxxB X X 15 mA DPAK
TN815-xxxH X X 15 mA IPAK
TS820-xxxB X X 0.2 mA DPAK
TS820-xxxH X X 0.2 mA IPAK
TS820-xxxT X X 0.2 mA TO-220AB
TYNx08 X X X 15 mA TO-220AB

ORDERING INFORMATION

TN 8 05 - 600 B (-TR)
STANDARD
SCR PACKING MODE:
SERIES Blank: Tube
PACKAGE: -TR: DPAK Tape & Reel
CURRENT: 8A
B: DPAK
SENSITIVITY: VOLTAGE:
H: IPAK
05: 5mA 600: 600V
15: 15mA 800: 800V

TS 8 20 - 600 B (-TR)
SENSITIVE
SCR PACKING MODE:
SERIES Blank: Tube
PACKAGE: -TR: DPAK Tape & Reel
CURRENT: 8A
SENSITIVITY: VOLTAGE: B: DPAK
20: 200µA 600: 600V H: IPAK
700: 700V T: TO-220AB

TYN 6 08 (RG)
STANDARD
SCR PACKING MODE
SERIES Blank: Bulk
RG: Tube
VOLTAGE: CURRENT: 8A
6: 600V
8: 800V
10: 1000V

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TN8, TS8 and TYNx08 Series

OTHER INFORMATION

Part Number Marking Weight Base Quantity Packing mode

TN805-x00B TN805x00 0.3 g 75 Tube

TN805-x00B-TR TN805x00 0.3 g 2500 Tape & reel
TN805-x00H TN805x00 0.4 g 75 Tube
TN815-x00B TN815x00 0.3 g 75 Tube
TN815-x00B-TR TN815x00 0.3 g 2500 Tape & reel
TN815-x00H TN815x00 0.4 g 75 Tube
TS820-x00B TS820x00 0.3 g 75 Tube
TS820-x00B-TR TS820x00 0.3 g 2500 Tape & reel
TS820-x00H TS820x00 0.4 g 75 Tube
TS820-x00T TS820x00T 2.3 g 50 Tube
TYNx08 TYNx08 2.3 g 250 Bulk
TYNx08RG TYNx08 2.3 g 50 Tube

Note: x = voltage

Fig. 1: Maximum average power dissipation Fig. 2-1: Average and D.C. on-state current
versus average on-state current. versus case temperature.

P(W) IT(av)(A)
8 10.0
α = 180° 9.0
7 DC
8.0
6
7.0
5 6.0
α = 180°
4 5.0
3 4.0
360° 3.0
2
2.0
1 IT(av)(A) 1.0
α Tcase(°C)
0 0.0
0 1 2 3 4 5 6 0 25 50 75 100 125

Fig. 2-2: Average and D.C. on-state current Fig. 3-1: Relative variation of thermal impedance
versus ambient temperature (device mounted on junction to case versus pulse duration.
FR4 with recommended pad layout) (DPAK).

IT(av)(A)
K = [Zth(j-c)/Rth(j-c)]
2.0
1.0
1.8
1.6 DC

1.4
0.5
1.2 α =180°
1.0
0.8
0.6
0.2
0.4
0.2 Tamb(°C) tp(s)
0.0 0.1
0 25 50 75 100 125 1E-3 1E-2 1E-1 1E+0

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 TN8, TS8 and TYNx08 Series

Fig. 3-2: Relative variation of thermal impedance Fig. 4-1: Relative variation of gate trigger current
junction to ambient versus pulse duration and holding current versus junction temperature
(recommended pad layout, FR4 PC board for for TS8 series.
DPAK).

K = [Zth(j-a)/Rth(j-a)] IGT,IH,IL [Tj] / IGT ,IH,IL [Tj = 25 °C]

1.00 2.0
1.8 IGT
1.6
DPAK 1.4
1.2
IH & IL
0.10 TO-220AB 1.0 Rgk = 1k Ω
0.8
0.6
0.4
tp(s) 0.2 Tj(°C)
0.01 0.0
1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 -40 -20 0 20 40 60 80 100 120 140

Fig. 4-2: Relative variation of gate trigger current Fig. 5: Relative variation of holding current
and holding current versus junction temperature versus gate-cathode resistance (typical values)
for TN8 & TYN series. for TS8 series.

IGT,IH,IL [Tj] / IGT ,IH,IL [Tj = 25 °C] IH[Rgk] / IH[Rgk = 1kΩ]

2.4
2.2
2.0 IGT
1.8
1.6
1.4
1.2
1.0
IH & IL
0.8
0.6
0.4
0.2 Tj(°C) Rgk(kΩ)
0.0
-40 -20 0 20 40 60 80 100 120 140

Fig. 6: Relative variation of dV/dt immunity Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values) versus gate-cathode capacitance (typical values)
for TS8 series. for TS8 series.

dV/dt[Rgk] / dV/dt [Rgk = 220Ω] dV/dt[Cgk] / dV/dt [Rgk = 220 Ω]

15.0
VD = 0.67 x VDRM
Tj = 125°C
12.5 Rgk = 220 Ω

10.0

7.5

5.0

2.5
Rgk(kΩ) Cgk(nF)
0.0
0 20 40 60 80 100 120 140 160 180 200 220

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TN8, TS8 and TYNx08 Series

Fig. 8: Surge peak on-state current versus Fig. 9: Non-repetitive surge peak on-state
number of cycles. TS8/TN8/TYN. current for a sinusoidal pulse with width
tp < 10 ms, and corresponding values of I²t.

ITSM(A) ITSM(A),I2t(A2s)
100 1000
Tj initial = 25°C
90
80 TYN tp = 10ms
dI/dt TYN
70 Non repetitiv e One cycle limitattion
ITSM
Tj initial = 25 °C
60 TS8/TN8
50 100
TS8/TN8
40 TYN
30 Repetitive I2t
Tcase = 110 °C
20 TS8/TN8
10 Number of cycles tp(ms)
0 10
1 10 100 1000 0.01 0.10 1.00 10.00

Fig. 10: On-state characteristics (maximum Fig. 11: Thermal resistance junction to ambient
values). versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35 µm)
(DPAK).

ITM(A) Rth(j-a) ( °C/W)

50.0 100
Tj max.:
Vto = 0.85V
Rd = 46m Ω 80
10.0
Tj = Tj max.
60

Tj = 25°C 40
1.0
20
VTM(V) S(cm 2)
0.1 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 4 6 8 10 12 14 16 18 20

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 TN8, TS8 and TYNx08 Series

PACKAGE MECHANICAL DATA

DPAK (Plastic)

DIMENSIONS

REF. Millimeters Inches

Min. Max Min. Max.

A 2.20 2.40 0.086 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.212
R C 0.45 0.60 0.017 0.023
C2 0.48 0.60 0.018 0.023
D 6.00 6.20 0.236 0.244
R
E 6.40 6.60 0.251 0.259
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.397
L2 0.80 typ. 0.031 typ.
L4 0.60 1.00 0.023 0.039
R 0.2 typ. 0.007 typ.
V2 0° 8° 0° 8°

FOOTPRINT DIMENSIONS (in millimeters)

DPAK (Plastic)
6.7

6.7

1.6 1.6

2.3 2.3

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TN8, TS8 and TYNx08 Series

PACKAGE MECHANICAL DATA

IPAK (Plastic)

DIMENSIONS

REF. Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A
A 2.2 2.4 0.086 0.094
E
C2 A1 0.9 1.1 0.035 0.043
B2 A3 0.7 1.3 0.027 0.051
L2
B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212
D B3 0.85 0.033
B5 0.3 0.035
B6 0.95 0.037
H B3
L
L1 B6 C 0.45 0.6 0.017 0.023
B A1 C2 0.48 0.6 0.019 0.023
V1 D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
B5 C
G H 15.9 16.3 0.626 0.641
A3
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
V1 10° 10°

TO-220AB (Plastic - with notches)

DIMENSIONS

REF. Millimeters Inches

H2 A
Min. Max. Min. Max.
Dia C
A 4.40 4.60 0.173 0.181
L5 C 1.23 1.32 0.048 0.051
L7
D 2.40 2.72 0.094 0.107
L6 E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
L2
F2
F1 1.14 1.70 0.044 0.066
F2 1.14 1.70 0.044 0.066
F1 D
L9
G 4.95 5.15 0.194 0.202
L4 G1 2.40 2.70 0.094 0.106
F H2 10 10.40 0.393 0.409
L2 16.4 typ. 0.645 typ.
M
G1 E L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
G
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. 3.75 3.85 0.147 0.151

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 TN8, TS8 and TYNx08 Series

PACKAGE MECHANICAL DATA

TO-220AB (Without notches)

DIMENSIONS

B C
REF. Millimeters Inches
b2
Min. Typ. Max. Min. Typ. Max.

L
A 15.20 15.90 0.598 0.625
F
a1 3.75 0.147
I
a2 13.00 14.00 0.511 0.551
A
B 10.00 10.40 0.393 0.409
b1 0.61 0.88 0.024 0.034
l4 b2 1.23 1.32 0.048 0.051
C 4.40 4.60 0.173 0.181
a1 c2
c1 0.49 0.70 0.019 0.027
c2 2.40 2.72 0.094 0.107
l3
l2
e 2.40 2.70 0.094 0.106
a2
F 6.20 6.60 0.244 0.259
I 3.75 3.85 0.147 0.151
I4 15.80 16.40 16.80 0.622 0.646 0.661
b1 M
L 2.65 2.95 0.104 0.116
e
c1 l2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
M 2.60 0.102

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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