clssate

Dote 2013J35

Module 6:. Yidd elyect bionsistos (tET)

anipar dev'ce ahich cwvq Cturnent
due to one.
Ohnee terir als
rain -oSowce ond
namely 4ato.
he eledaic lield o FEI 15 Sate Set yenteral,
apieck váfase ahich contndlls he drain Cwent
LFt is dtoe operated devia
9! Can e cat clasilied bellous

JFET McSFEI
N-channels p-Channes Sepleion

Nchonnel Pchonnl kcerd toe

Bincigle d JEE1
n JFE1 the Hoo ck drain CwLent thicugh Cbannd
is contnolled bt uvese liascd velaqe apliecd
actosS qate i Sowe, teni nal . JFEI iSis noxma
ON devicc 2hen Vons o Volt
 classmate
Dote
Panc

Igpes t JEFT
) N-channe JFEI

ohmic
tontont
N
Gate

N-channel

Sovce(S)

Considen N- type sc be at dhe ends oh 2hick

chmic centats are qiven. he
Sowre Aetminels

A heavela doped P-type se is dpesitated

eith eu ide d the pohse ne ons qive
lominel, this N-chennel JFET_n
gate.
hich electons cune maomitt (les jt's

Symbol is qivan dlsu

S
 classMaLe
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) p-chonnel 3fEJ
Dcin (p)

oh mie
Centuc

C1ate (Gi
p-chunnd

Sowce (S

bhen N-tupe SC
sc is heavil, deped k degescte:
on eidhe Side o Ptype SC by, 2ue
P-channel JFET hene hels ane

atuuctune d JFET
) .he teminal thsrough 2ehich ele bee
ntot dhe channel is called Sou
 classmute
Date
Pogc

a)cin : he tominal term 2ohere electnon ezits

the cheInnel is Ccll ec dyain

s)3) 4ate '- n Nchenel JFE1, the heevity doped

P- type eqion ho*ms a qate tbainel.
4) (hcnnel:- Aregien detwcn wo keaily deped
cppcsite type of sc ccninectiag the
Scutcc 4 dain intenalyiscalled
channel it allows the tient ow
thacuah it
5)ste -SautC Voltuaye
between qate
is
Vsnad2hich.
altuaqs ineN eNSe biased condition is
calle cl hate Sc LoteL voltaqe Vos contycls
4he daain Cuwetent Mlow t dhs cugh tbe
Chennel.

6) raiy Sowtce ( Vps ) Jhis is a

voltage applitd betw een dHain 'g Sowrcc
[Link] volfage
votae con decicle the
Sotwaticn yalue eh the cdain Ctetheié
Spuotion d N-Dxatnchonnel JFET

Hute

-Socce
 is shotec
ohen the qode
$CwICc.
qule
dhe.
temniodk
maim
dtain CwU1ent

his
Conducting. dhemdl is dety, cpen one
dedaon con sUach

acics, dhe qate Ewi irh

apied aip
it is olse sed hat he dehletion
into
hc icuncton astnt penitrating.
tendukiag Channel.

hie o dor
CQLses decouasein the 2oid thcduced.
is
due do ohich wLHe nt klco
A{ he astt Cottain value ch gate Scuze
dhe conduction channel i
dekletic oe
(omplelg ock lacause thef byevents
oidth leCorme maimurm
the
eletron em oowce to dain &
How o

qate scune \ettp

he particlar ote ao dhe caUlent
Vos at 2ohich dhe drain Cuvtertastops er
cd o)
thcugh dhe eat channel is callecl ColA)_at
voltade which is denoted ag Vous
point JFET is in oß6 slate lcakge cnain
 cdassmate
Dafe
Page

Dain

Gicte

Vos
N

hmic mede

Sh's dhe active

oclve mode cf
of JFE1
JEEI in 2ohich it
00ks eke voltaae veniatle esistey s
dnain sowtcc valtage VoG inceases dain
Cuent Io aso
also ncu cese. o con de contclled
the qcte SOwce veltage Vrs
Hhe. conducohen
Shitala dhe conducing ch annel is wide enouqh
o the cuoent fow. the
unction is 9evese biase dhe channel 2oidth
9et duec Cwnent low Cacan be(onty.
this JFET s in ON stote

) batu nction mode: Ireqion

Ixegton
ox dhe qiven walue of vors dhe Cwtent Io
become macimum a then 9enains cOnston!
when odlljicien+ VDs is abpitd A44 his feint
JFET isaic to be csatutatecl as it ea chs
 clhssmab
Date
Paue

the
the maimum dain euwv1 ont voluo

he olul. dd Vos at achich dhe crain Cuvtent

is maimum and then9amalne constant or o
qiven nolue f Vo$. l5 called linch OF
deneted y Ve
9n dhis JEET S inn OFF state alt et
NeIs 91eaches it's cud -ohh
Io
ohmic satucton
9eqion

VS 3

Vps
( Vel+ )

SHain chana ctenistics

equal and opposite.

dhe.
olb dtag vp*4v
plinch Vonslobb)
 classmate
Date
Page

Jansjer Chanacterlsfics of JfE 1

Chox N- Channel)

Vo15lo-4V ID maz lpss

.
Vp= 4v

? - 6 - S - 4 - 3 -2

Jhe toranshet charadenictics of IFET cue flated

etwen dnain CwUMent Io &i Crate Soume.
veltue Vors at Constant drain Gotwrce vettge
Vps.

olseed dhat aS
as Vo1s inoe ses in dhe
neqative side the drain Cvoent Io 9advcs
nch-in eanly 9444 is hown in the qaph dhat
dhe d din wYent Vaties oidh iespect to
the change in Vos

Mathematicaly the elation detoen Io cnd Vens

gven b
Ioss - yons)
 classMate
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1
Joss

Hene Ipss e dhe ozimm dnain CwvIent

shoon at t 6 in dhe qtcph hen Vensz0

loint A óhoun in dhe qiaph aapnesorts cu e

Cwirent Ip so
nalue d Vons hene the drain
Vous Cob6) 4 Hence 0e Con lunite

lp I0ss 2hen
2hen Veas =

BII FET

9 is a bipolar device 94 is a unibolan deuice

)he tersinals ane named he teminals ate nomet
03 4ede drain , Sora ka
as rase,emitten4 collectou as.

+ is vcltaqe ahcnated
device deuice

w) 9he noise level is hish he nelse levelis lewe

stal:lib slalili
 alAssMAte
Date Q6)B125
Page

N) She eliciancy is.

i9 choocteiend
chanocteved hehe orcien cg is chanadevisd
yamplhicaton jacbws. tCnsconductcnce_ Cwive.

dtcp
diop Ahghen qait Aond- a lo gain bandwidth
aidth acdoct þrodoct
ix) BJT is
king in oige

Vatam etens a5socate with sFE T

) AC drain stesistance (Rcl):
i dhe 9ati'o c change m dtain Sowce
voltage to dhe atieen ctain
at constant Vo1schon
in cotain c e n t

Rd =ANos
VGs= Gonst

)Mansconductan cc.
$t is the ctio ch change in cotainawotent
4o dhe chan
COnstant Vos
in
qate sowre valtase at
Vos = const

) Amplification juctox (u):

94 is'dhe tatio of chan in dain owtee
Ndtage
at
to
onstant
the chon gIp
Cnent
in gate-Sowte
vetag
Tp = Const
 cassne
Oare
Paga

1.4 JFET has mozimum dain Cent

mozimum dain CwIent 32 m9
olta is -}V.k,
he cut - olh qate Soue, ahe
nd the dain dhe qote
Cutint
Sowta voltae
=32 XI03 A
Aiven Ioss
Joss 32 mA

Vois - -4.s V

Ioss
( Vons(obb)
(1--45)
(- 3 )
-3
Ip = 6 125 X Lo
io 6125 mA

dnain Cuent is
-6v Colculate Vons B Ve.
 ):33 A l03 X
) (-6)
-2) -
VorS
-6V (ob)= Vons
x1O 3 mt 3 Joss
e Coleulot
-6V ) Vorstot6
3mA I0ss
-(bv)
V =76 V5
(.6)
 classmae

4: hen Veis o< SIET is choge lyon -31V

to - 3V dhe drain Cwutent h ene)
to I:3. mA,hind dhe volue oh

3.|

Vors2 3 V

13 m

VoS,VoS 2

3 X o

3
3x lO
BmV

4)
 classMAte
Dote
Doge

91 Von 5(opb) = -SV, Jpss )

IpNDS

Vo1s (obb) = -8 v
3
l6 m
NGS -5
rom dio gro
2
Ip > Ioss
3 2
16 x Io

-3
A
(-5)
(- 8) )
(a25 X (o3) (2.2 Xo)
Vos 5.05 V
 cdassmate

Data
Page

MOsFET

MOSFE T js dhe abeiqction ol melal ozide

oemiconcucto Jield elject
hos ollowing fominals ,
Dhate 9! is foamed on the insuloting
dager hich contols the |(ow bf
CLtorent dctesecn dain 2 5owie.
obowtca k diain lemminals 1
hesc ane
Ceated at he top k botorm o the
J10s FET dhe voltage supply Cennecte d
tween them is nbponsit to prcduee
dhe deain CuAent

)Sulstrate dhe base df MosFET upon

qohich the wahet o Silicon ls
deposit ed.
Channel : he qion letween doain Scace
h gate i called channel th acugl
2hih electnons Can be tnonslo ecl
Si02 toy!94 is a dhin koyer C%
) Sio, of ainsaltina
Omatenial 2ohich wo a dieleie
he erchange. of electsiens
ler the
holes
 classmate
Dafe
Poe

(D)

N
Gtate Co)
Substole
(SS)
N N-chonnel
Sio

SowQ
(s)

MoSFEI ane clossilied as enhancement tpe

sa depletion 110sFETS hunthen the
cataqeisua in N-channel' & P-channe
Jhein smbots glven delao.

N-chann el enhanen ent chennel cnhencement

Ne chonmnel depleton P chanel depleto^

 cassmute
Date
Poce.

rlass ijrcotBon betoen deplet'on type b mhonit

type MOSFET

Deple dion (nhonceynent

Sm dhis type the Sn this type cherne
chamnel is present is not phesent 1or
hen the Lrginning the egining
by opp^ extennal
chnndl ay aptlyint. etenef
to oveflane f he channel
i dhe Concentnation if the concentsa hon
dhatg it ccuvnier deouseasecharge cavtier inovass
dhen is called a then it is called
depletion aee MoSFET enchancem ert MOSEET

heiz is not thteshotd hein s a theshol d

e votta ge as Such. notlog
3 con þA0duce cwvient cannot þrccue Cunert
toithoct' any qate dtoge in dhe absence <f qate
hdttag
hen Vois 0
Nhen NGs =0 depletion
ype MOSFET 0012S enhancement
MOSF E1 2v0kS s OFf
Switth Scoileh
 Daie.
Dage

(DMoSfET)
MOSFET

Sepieki'en ype

5i02

Ip
Gate Substrale

SoMl

Jhis is n-chonnel de DIOsEETA slab o

p-tupe SIlicon ubstate is taken 2ihich
7Crsillicosfondation o the devic., She N- tufe
is doped at dhe tsp lottemto
lon dacain at dhe Sotse. heu ac linkd
tosathab N-channeletueen
Shown in

Alaypt o Sllicon diczide ashich 2oHks as a

dieledic deposited OnOn dhe
dheSwlae
gate dotrninal is dakenot ohich 1emains
Rsulate d puom dhe N-channel.
 Date

he coiain owt Ce teminad ae kah en ut

or the. Ndopped uqion by mahing too foles
Gn he insalating loyp
uc to SiOi nlaer
t hthe
mesfe ,
e msfet atcounh
neng high.
high inpat° impicone
,, dhis casc me tal (1) is ubed lon sowta
clrcain A qate cornneutiors.
baide (0) is sel Joa [Link] salahng ay
Semitenducfe (s),1 elens
hence
the losic siucte.7e
he name nes
c the sulstnate

cnhing
12hen aate obotc. voliag
din but Small oa

made heyotie the cleciros

the chonn ac. slebaleck
Jhe hela
çtiltncetc. heeas

lotyird

1eccmlinatty
cletno 4les teduc the
 lhe chorired
hencc. dain CwuCnt
cnf deotbs.
Vos isi mde mee. ncqative dhe orete of
Lompination also inç ases ata! the paticul
Nalue dhe channel wil] be totot
dcpleted ch ee eletrons
AF this pain he dtoin cwvient betone

* Jhe dnain chatactenis tic h taansen

chaxacteisticg o DMosfET ne qiven deloa :

Vps

. Chonactenistics
Hene Vons. (o44): -5V
 mcde

Vinslv)

- 3- - 6-5 -4 43 -2

Onansl et Chaect eni'stic

Enhoern ent Jype MosFET (ErIOSFET)

t
 classmate
Date

Constuct'on
Jhis is Nrchonnel
A Slab o ptype Sulstate is tap er 2ihth
OMms lo wnda ti'on o devico
he nitype sc is 'doped at top hb botte
She flosEgT is diljeent thon DrnoSFET bj
insuina hat thei is no chonnel dtn the
dain dhe cóo wt CE
Jhe inslaing ST Sio layer js 2cxh cs.
dieleetrc is depositec on sonhae o the deua
hich isdates he qate tenminal hxoi he substzi

She dain h Svutce ae also Sp Sepenated

om each othe as hein is no channel is
betn

10onhing
D9n EMosFE1 gate totminnd is lcMcond ba
9ohen gate Soce Nolagei NGs is nero, he
dain Cuent is
q dhe channel
positive hotential
hen aate is qiven hositve potential, in mines
electons o oulstate oet attcated
totuads the gote
lominal ecause of heg Cannot
Soe
egch dhe qate
hena dhi
acunlated neat he ounda
 cacsnate

a the olhen hend majoil hole P Sustta te

qet aupetec fem the qate dep into he
yneg'on
Vo1s is noc posihvc vltase the
Cencentatio oh eleor notut the
A he specilic. volue. ch Vos, the
N-channel is honmed etn toc n-deped uyier
Qohich cause dtain cuvUIent tote dow thcigh
devia is oltase is calecd thaeshctd veltoA
Pahesnte

ohen Vo1s inoteasS the channel iis enhan cal

k hence he devic is calleá he cnhoncament
10SF]:

* MOSFET as a Switch Vop

Lamf

Pin

Nchannl
 classnate
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Jhe diaqam isis shown

she ton hon n-channel EMoSE,
to act as a .Sitch it is ploced lehwen diad
Cnd the tar q ound
So have it's 0oing as a Suitch', he
MOSEET mast de cherated in Cut -ob7 uaton
Aineat eaqion
Asstume hat dhe MosFET is initialy of f..
She vetage actoss qate a So wtle is
int made apprchtitely pesitive . When
aeiat
Vas licomes mo He than fh eshotd votfae
vos > VTH dhe MoSFEI entens into the
ineatiqion A 004ks as ON Switeh. Hence
ihe ight glous on lomp 4lous.
9} dhe ihpat vttage
ydltag is edacud, t may go
theshotd ttage
An di's Condition MOSFÉ ente5 jnto the
Cut-olh- ugion A au0otks as off Swith. axe
he aimp t tvnd oN MoSF EJ
Cas be sed as a SioiHeh.
Applic ations o MosFET
is ase& as ampler to ampl the 2ecak
Siqnal
h Con he used aas Switches they Cen

alte powet Supply eny eoail

 ClAS

Date
Page

MoSFE Is ate 2scc to bild oqic gateo like. NAN D,

NOR etc.

hey con de
le 2sed as [Link] a
devices
M0SFETS hind dhein applications in t minoproreso
yowo Metaonic

Advantys
4iah tt Suitchig spad
) lo powet Consmtlon

ah input impedan e
)lcw noise level
isodvontags
)MosFET15 have vey hin Sio2 laye1. herehey
ivoty hih vola e is cp plied , the éntieH
device Can Qncgo beakdown echan')
do not onh docll at kisen tenp
Ben huntion Changes 20ilhe temp aiatio:
9Dheg have Ainited vgltay capacit
he
hghe
(ern ped to manul,ackete shich deads da
(ost oh ovoall eletncnc' device .