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Basic Electronics Module 2 Question Bank

This document covers the fundamentals of Bipolar Junction Transistors (BJTs) and Field Effect Transistors (FETs), detailing their operation, characteristics, and calculations related to currents and voltages. It includes explanations of various configurations, such as common base and common emitter, along with procedures for drawing DC load lines and determining Q-points. Additionally, it discusses the construction and operation of different types of JFETs and MOSFETs, including their transfer and drain characteristics.

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43 views1 page

Basic Electronics Module 2 Question Bank

This document covers the fundamentals of Bipolar Junction Transistors (BJTs) and Field Effect Transistors (FETs), detailing their operation, characteristics, and calculations related to currents and voltages. It includes explanations of various configurations, such as common base and common emitter, along with procedures for drawing DC load lines and determining Q-points. Additionally, it discusses the construction and operation of different types of JFETs and MOSFETs, including their transfer and drain characteristics.

Uploaded by

bhargavi_kulkarni_12
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd

Basic Electronics (BBEE103/203)

Module 2 BJT and FET

Bipolar Junction Transistors


1. With a neat diagram, explain the operation of an npn transistor.
2. With a neat diagram, explain the operation of a pnp transistor.
3. Explain various currents and voltages flowing through the BJT transistor.
4. Define α and β. Determine the relationship between α and β.
5. A transistor has β = 150 and IE is 12 mA. Calculate the approximate collector current (IC) and
base current (IB).
6. Calculate IC and IE for a transistor that has αdc = 0.98 and IB = 100 μA. Also determine the value
of βdc (or hFE) for the transistor.
7. Calculate αdc and βdc for the transistor if IC is measured as 1 mA and IB is 25 μA.
8. With a neat circuit diagram and characteristics graph, explain common base configuration of pnp
transistor.
9. With neat diagram, explain the input and output characteristics of transistor in common base
configuration.
10. Explain common base input characteristics and output characteristics of BJT.
11. Explain input and output characteristics of the common emitter configuration.
12. Describe the procedure for drawing DC load line on transistor CE output characteristics.
13. With respect to BJT, describe the concept of obtaining the DC load line.
14. Explain how Q-point is obtained on a DC load line, considering a transistor base bias circuit.
15. Draw the DC load line for transistor and identify Q point.
16. For the base bias circuit, RC = 12kΩ, RB = 470kΩ, VCC = 20V and VBE = 0.7V. Draw the DC
load line and indicate the values.

Field Effect Transistors


1. Explain the construction and operation of N-channel JFET.
2. Make use of N-channel JFET to describe its operation and characteristics.
3. Explain the construction and operation of P-channel JFET.
4. Explain drain and transfer characteristics of N-channel JFET.
5. Explain the transfer and drain characteristics of P-channel JFET.
6. Explain the construction and working of N-enhancement MOSFET.
7. Explain the transfer and drain characteristics of enhancement type MOSFET.
8. Explain the construction and working of N-depletion MOSFET.
9. Explain depletion type MOSFET along with the transfer and drain characteristics

Bhargavi Arun Kulkarni, ECE Dept. Page:

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