Basic Electronics (BBEE103/203)
Module 1 Semiconductor Diode and Zener diode
Semiconductor Diodes
1. Explain the operation of pn junction diode under forward and reverse bias conditions with the
help of V-I characteristics curve for silicon and germanium diodes.
2. Define following diode parameters: (i) Static resistance (ii) Dynamic resistance (iii) Knee
voltage (iv) Forward voltage drop (v) Maximum forward current (vi) Reverse saturation
current (vii) Reverse breakdown voltage (viii) Peak inverse voltage (PIV) (ix) Maximum
power rating
3. Calculate forward and reverse resistances offered by a silicon diode with I F = 100 mA and at
VR = 50 V. Assume VF for silicon diode to be 0.75 V and reverse current IR ≅ 100 nA.
4. Explain the different diode approximation with neat figures. Calculate current in the circuit
when a silicon diode connected in series with a resistor of 4.7kΩ is driven by a 15V dc
supply.
5. Find the value of the series resistance R required to drive a forward current of 1.25 mA
through a Germanium diode from a 4.5 V battery. Write the circuit diagram showing all the
values.
6. Construct the piecewise linear characteristic for a silicon diode which has a 0.25 Ω dynamic
resistance and a 200 mA maximum forward current.
7. What is a DC load line? With the help of neat circuit diagram and waveform, explain the
procedure of constructing a DC load line for a semiconductor diode.
Diode Applications
8. Explain with neat diagram and waveforms, working of the half wave rectifier.
9. The input voltage to a half wave rectifier is V = 200 sin 50t. If RL = 1 kΩ and forward
resistance of the diode is 50 Ω, find: i) The dc current through the diode ii) The ac or rms
value of current through the circuit iii) The dc output voltage iv) The ac power input v)
Rectifier efficiency.A diode with VF = 0.7 V is connected as a half wave rectifier. The load
resistance is 500 Ω and the secondary RMS voltage is 22 V. Determine the peak output
voltage and the peak load current.
10. In a half wave rectifier, the input is from 30 V transformer. The load and diode forward
resistances are 100 Ω and 10 Ω respectively. Calculate the 𝐼𝑑𝑐, 𝐼𝑟𝑚𝑠, 𝑃𝑑𝑐, , 𝜂, PIV and
regulation factor.
Bhargavi Arun Kulkarni, ECE Dept. Page:
Basic Electronics (BBEE103/203)
Module 1 Semiconductor Diode and Zener diode
11. With the help of neat circuit diagram and waveforms, explain the working of full wave
rectifier with centre-tapped transformer.
12. The input to the full wave rectifier is v(t) = 200 sin 50t. If RL is 1kΩ and forward resistance
of diode is 50Ω, find: i) D.C current through the circuit ii) The A.C (rms) value of current
through the circuit iii) The D.C output voltage iv) The A.C power input v) The D.C power
output vi) Rectifier efficiency.
13. With neat circuit diagram and waveforms, explain the working of a bridge rectifier.
14. What is the need for a capacitive filter? Explain.
15. Describe the working of a capacitor filter for a half wave rectifier with a neat circuit diagram
and necessary waveforms.
Zener Diode
16. Name the junction breakdowns in diodes. Explain them briefly.
17. Distinguish between Zener and Avalanche breakdown.
18. Write down the characteristic of Zener diode.
19. What is Zener diode? With neat circuit diagram, explain the operation of voltage regulator
with and without load.
1. With a neat diagram, explain the operation of an npn transistor.
2. With a neat diagram, explain the operation of a pnp transistor.
3. Explain various currents and voltages flowing through the BJT transistor.
4. Define α and β. Determine the relationship between α and β.
5. A transistor has β = 150 and IE is 12 mA. Calculate the approximate collector current (IC) and
base current (IB).
6. Calculate IC and IE for a transistor that has αdc = 0.98 and IB = 100 μA. Also determine the value
of βdc (or hFE) for the transistor.
7. Calculate αdc and βdc for the transistor if IC is measured as 1 mA and IB is 25 μA.
8. With a neat circuit diagram and characteristics graph, explain common base configuration of pnp
transistor.
9. With neat diagram, explain the input and output characteristics of transistor in common base
configuration.
Bhargavi Arun Kulkarni, ECE Dept. Page:
Basic Electronics (BBEE103/203)
Module 1 Semiconductor Diode and Zener diode
10. Explain common base input characteristics and output characteristics of BJT.
11. Explain input and output characteristics of the common emitter configuration.
12. Describe the procedure for drawing DC load line on transistor CE output characteristics.
13. With respect to BJT, describe the concept of obtaining the DC load line.
14. Explain how Q-point is obtained on a DC load line, considering a transistor base bias circuit.
15. Draw the DC load line for transistor and identify Q point.
16. For the base bias circuit, RC = 12kΩ, RB = 470kΩ, VCC = 20V and VBE = 0.7V. Draw the DC
load line and indicate the values.
Field Effect Transistors
1. Explain the construction and operation of N-channel JFET.
2. Make use of N-channel JFET to describe its operation and characteristics.
3. Explain the construction and operation of P-channel JFET.
4. Explain drain and transfer characteristics of N-channel JFET.
5. Explain the transfer and drain characteristics of P-channel JFET.
6. Explain the construction and working of N-enhancement MOSFET.
7. Explain the transfer and drain characteristics of enhancement type MOSFET.
8. Explain the construction and working of N-depletion MOSFET.
9. Explain depletion type MOSFET along with the transfer and drain characteristics
Bhargavi Arun Kulkarni, ECE Dept. Page:
