HIGH-VOLTAGE MONOLITHIC IC
ECN3064
ECN3064 is monolithic IC integrating 6 IGBTs.
It can be applied to DC brushless motors and Induction motors.
Functions
* Integrated charge pump circuit
* Free Wheeling Diodes are integrated
* Overcurrent Protection circuit is integrated
Features
* PWM control of upper and bottom arm IGBTs are possible by controlling outer Microproc
essor
* 6 Logic inputs are compatible with 5V CMOS
or LSTTL outputs
* Upper and Bottom arm IGBTs can operate in 20kHz chopping frequency
* For converted AC200 to 230 V power supplies
VCC(15V) D2 D1
C2 + C1 VS
C0 + - -
CB C+ C- CL VS1 VS2
VCC VB
VB supply
Charge Pump
Clock
UT
VT Top Arm Motor
WT
Driver MU
Microprocessor MV
MW
UB
VB Bottom Arm
WB Driver
CLOCK
Pulse Generator Latch
R S
-
Vref
+ Filter
1us 0.5V
CR VTR GL RS GH1 GH2
RTR
CTR
RS
Vref
Fig.1 Block Diagram
PDE-3064-0
ECN3064
1. General
(1) Type ECN3064SP, ECN3064SPV,ECN3064SPR
(2) Application 3-Phase DC Brushless Motor and Induction Motor
(3) Structure Monolithic IC
(4) Package SP-23TA, SP-23TB, SP-23TR
2. Maximum Allowable Ratings (Ta=25 °C)
No. Items Symbols Terminal Ratings Unit Condition
1 Output Device VSM VS1,VS2 500 V
Breakdown Voltage MU,MV,MW
2 Supply Voltage VCC VCC 18 V
3 Input Voltage VIN UT,VT,WT, -0.5~ VB+0.5 V
UB,VB,WB
4 Output Current IMDC MU,MV,MW 0.7 A
5 Peak Output Current IMP MU,MV,MW 1.5 A Note 1
6 Output Current in Start IOM MU,MV,MW 1.5 A Note 1
Up and Accelerating
7 Operating Junction Tjop -20 ~ +125 °C Note 2
Temperature
8 Storage Temperature Tstg -40 ~ +150 °C
Note 1. Please note that aculmulated duty of a period exceeding 0.7A has to be less than 5% of
total current flowing period.
Note 2. Thermal Resistance
Rj-c = 4 °C /W
Rj-a = 40 °C /W
3. Recommended Operating Conditions
No. Items Symbols Terminal MIN TYP MAX Unit Condition
1 Supply Voltage VS VS1,VS2 50 325 400 V
2 VCC VCC 13.5 15 16.5 V
Note 1. Recommended Safe Operating Area(SOA)
It is recommended that this IC is used within the SOA as shown below where
IM and VM are the current and the voltage at the terminal of motor wiring
at the change of phase (turn off).
1.5
IM Safe
(A) Operating Area
0 400
VM(V)
PDE-3064-0
ECN3064
4. Electrical Characteristics (Ta=25 °C)
Unless otherwise specified, VCC=15V, VS=325V
Suffix T; Top arm B; Bottom arm
No. Items Symbols Terminal MIN TYP MAX Unit Condition
1 Standby Current IS VS1,VS2 - 0.5 1.5 mA UT,VT,WT,UB,VB,
2 ICC VCC - 10 20 mA WB=0V
3 Output device FVD VFT MU,MV, - 2.2 3.0 V I=0.35A
MW
4 VFB MU,MV, - 2.2 3.0 V I=0.35A
MW
5 Turn On TdONT MU,MV, - 1.0 2.0 µs
MW
6 Delay Time TdONB MU,MV, - 1.0 2.0 µs I=0.35A
MW
7 Turn Off TdOFFT MU,MV, - 1.0 2.0 µs Resistive Load
MW
8 Delay Time TdOFFB MU,MV, - 1.0 2.0 µs
MW
9 Diode FVD VFDT MU,MV, - 2.2 2.8 V I=0.35A
MW
10 VFDB MU,MV, - 2.4 3.0 V
MW
11 Input Voltage VIH UT,VT,W 3.5 - - V
T,
12 VIL UB,VB,W - - 1.5 V
B
13 Input Current IIH UT,VT,W - - 100 µA Input=5V Note 1
T, Pull Down Resistance
UB,VB,W
B
14 VB Output Voltage VB CB 6.8 7.5 8.2 V
15 VB Output Current IB CB 25 - - mA deltaVLoad=0.1V
16 Reference Voltage Vref RS 0.45 0.5 0.55 V
for Overcurrent
17 LVSD Output Voltage LVSDON VCC,MU, 10.0 11.5 12.9 V Note.2
18 LVSD recover Voltage LVSDOFF MV,MW 10.1 12.0 13.0 V
19 LVSD reset hysterisis Vrh 0.1 0.5 0.9 V
Note 1. Pull Down Resistance are typically 200 kΩ.
Note 2. LVSD : Low Voltage Shut Down
PDE-3064-0
ECN3064
5. Function
5.1 Truth Table
Terminal Input Output
UT,VT,WT, L OFF
UB,VB,WB H ON
UT,UB UT&UB=H OFF
VT,VB VT&VB=H OFF
WT,WB WT&WB=H OFF
5.2 Timing Chart
UT
Top Arm
VT
WT
UB
Bottom Arm
VB
WB
MU Output
MV Output
MW Output
Example of DC Brushless motor drive
5.3 Overcurrent Limiting Operation
VB
This IC detects overcurrent by outside resistance Rs. typ 200kΩ
typ 220kΩ
When Rs input voltage exceeds inner reference voltage RS
S
typ Latch
Vref(0.5V typical), this IC turns off the bottom output. After typ 300Ω 5pF
R
Vref
overcurrent detection, a reset operation is done
at each inner clock signal period. Inner Clock Trigger
RS terminal inner equvalent circuit
In case of not using this function, please connect Rs
terminal to GL terminal.
PDE-3064-0
ECN3064
6. Standard Application
Component Recommended Value Usage Remark
C0 More than 0.22 uF for inner power stress voltage is VB
supply(VB).
C1,C2 1.0 uF +/- 20% for charge pump stress voltage is VCC
D1,D2 Hitachi DFG1C6(Glass For charge pump 600V/1.0A
mold type), DFM1F6 trr ≤ 100ns
(Resin mold type)
or considerable parts
CTR 1800 pF +/- 5% for clock Note 1.
RTR 22 k-ohm +/- 5% for clock Note 1.
Note 1. Clock frequency is determined approximately by next equation.
Floating capacitance of PCB must be considered.
At Recommended Value of CR, the error factor of IC is about 10%.
fclock = -1 / (2C*R*Ln(1-3.5/5.5)) ; Ln is natural logarithm
= 0.494 / (C*R) (Hz)
VCC(15V) D2 D1
+ C1 VS
C2
C0 + - -
CB C+ C- CL VS1 VS2
VCC VB
VB supply
Charge Pump
Clock
UT
VT Top Arm Motor
WT
Driver MU
Microprocessor MV
MW
UB
VB Bottom Arm
WB
Driver
CLOCK
Pulse Generator Latch
R S
-
Filter Vref
+ 1µs 0.5V
CR VTR GL RS GH1 GH2
RTR
CTR
RS
Vref
PDE-3064-0
ECN3064
7. Terminal
23 MV
22 VS1
21 MU
20 GH1
19 UT
18 VT
17 WT
16 RS
15 UB
14 VB
13 WB
12 VTR
11 CR
10 CB
9 CL
8 C-
7 C+
6 GL
5 VCC
4 GH2
3
2 MW
1 VS2
(Marking Side)
Fig.2 Pin Assignment
8. Package Outline
ECN3064SP ECN3064SPV ECN3064 SPR
(SP-23TA) (SP-23TB) (SP-23TR)
PDE-3064-0
ECN3064
9. Package Dimensions
(1) ECN3064SP (SP-23TA) (Unit:mm)
(2) ECN3064SPV (SP-23TB)
PDE-3064-0
ECN3064
(3) ECN3064SPR (SP-23TR)
31MAX
(30)
28 ±0.3
20 ±0.2
3.5 ±0.3
±0.2
φ3.6 ±0.2
±0.24
0.5 1.26
3.6 ±0.2
14.7MAX
±0.3
4.1 ±0.3
11.2
12.3 ±0.5
(9)
0.25 typ
(7.7)
+10°
-0°
0°
2.2 ±0.3
1 23
1.8 typ
±0.25 ±0.1
+10°
-0°
1.23 0.6
23.97 ±0.3
0°
4.9 ±0.5
7.1 ±0.5
1.27 ±0.5 2.54 ±0.5 2.54 ±0.5
PDE-3064-0
HITACHI POWER SEMICONDUCTORS
Notices
1.The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are adviced to contact Hitachi sales department for the latest version of this
data sheets.
2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3.In cases where extremely high reliability is required(such as use in nuclear power control,
aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel
control equipment and various kinds of safety equipment), safety should be ensured by
using semiconductor devices that feature assured safety or by means of users’ fail-safe
precautions or other arrangement. Or consult Hitachi’s sales department staff.
4.In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5.In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6.No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi, Ltd.
7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,
without the expressed written permission of Hitachi, Ltd.
8.The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures are
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