PWRLITE LD1010DA

High Performance N-Channel POWERJFETTM with PN Diode

Features Description
™ Superior gate charge x Rdson product (FOM) The Power JFET transistor from Lovoltech is a device that
™ Trench Power JFET with low threshold voltage Vth. presents a Low Rdson allowing for improved efficiencies in DC-
™ Device fully “ON” with Vgs = 0.7V DC switching applications. The device is designed with a low
™ Optimum for “Low Side” Buck Converters threshold such that drivers can operate at 5V, which reduces the
™ Excellent for high frequency dc/dc converters driver power dissipation and increases the overall efficiency.
™ Optimized for Secondary Rectification in isolated DC-DC Lower threshold produces faster turn-on/turn-off, which
™ Low Rg and low Cds for high speed switching minimizes the required dead time. A PN Diode is added for
applications where a freewheeling diode is required.
This product has tin plated leads.
Applications
™ DC-DC Converters
™ Synchronous Rectifiers
™ PC Motherboard Converters
™ Step-down power supplies
™ Brick Modules
™ VRM Modules

DPAK Lead-free Pin Assignments

D
G
D
S
G S
N – Channel Power JFET
Pin Definitions with PN Diode
Pin Number Pin Name Pin Function Description Product Summary
1 Gate Gate. Transistor Gate VDS (V) Rdson (Ω) ID (A)
2 Drain Drain. Transistor Drain 24V 0.0045 501
3 Source Source. Transistor Source
Absolute Maximum Ratings
Parameter Symbol Ratings Units
Drain-Source Voltage VDS 24 V
Gate-Source Voltage VGS -12 V
Gate-Drain Voltage VGD -28 V
Continuous Drain Current ID 501 A
Pulsed Drain Current ID 100 A
Single Pulse Drain-to-Source Avalanche Energy at 25°C EAS 220 mJ
(VDD= 6VDC, IL=60APK, L=0.3mH, RG=100 Ω)
Junction Temperature TJ -55 to 150°C °C
Storage Temperature TSTG -65 to 150°C °C
Lead Soldering Temperature, 10 seconds T 260°C °C
Power Dissipation (Derated at 25°C) PD 80 W

LD1010DA Rev 1.03 – 03-05

Thermal Resistance
Symbol Parameter DPAK Units
Ratings
RΘJA Thermal Resistance Junction-to-Ambient 80 °C/W
RΘJC Thermal Resistance Junction-to-Case 1.56 °C/W

Electrical Specifications
(TA = +25°C, unless otherwise noted.)
The φ denotes a specification which apply over the full operating temperature range.
Symbol Parameter Conditions Min. Typ. Max. Units
Static
BVDSX Breakdown Voltage ID = 0.5 mA 24 28 V
Drain to Source VGS= -4 V
BVGDO Breakdown Voltage IG = -50µA -32 -28 V
Gate to Drain
BVGSO Breakdown Voltage IG = -50µA -14 -12 V
Gate to Source
RDS(ON) Drain to Source On IG = 40 mA, ID=10A 3.7 4.5 mΩ
Resistance2 IG = 10 mA, ID=10A 3.8 5.0 mΩ
IG = 5 mA, ID=10A 3.9
VGS(TH) Gate Threshold Voltage VDS=0.1 V, ID=250µA -1 V
TCVGSTH Temperature Coefficient of VDS=0.1 V, ID=250µA -2.8 mV/oC
Gate Threshold Voltage
Dynamic
QGsync Total Gate Charge Sync JFET ∆VDrive =5V,VDS=0.1V 12.6 nC
QG Total Gate Charge ∆VDrive =5V, ID=10A,VDS=15V 15 nC
QGD Gate to Drain Charge VDS=13.5V to VDS=1.5V 10.5 nC
QGS Gate to Source Charge VGS =-4.5V to VDS=13.5V 4.5 nC
QSW Switching Charge VGS =-2V to VDS=1.5V 11.4 nC
RG Gate Resistance 0.4 Ω
TD(ON) Turn-on Delay Time 6.7
TR Rise Time VDD=15V, ID=10A 12.4 ns
TD(OFF) Turn-off Delay VDrive = 5 V 9
TF Fall Time Resistive Load 4.6
CISS Input Capacitance 1465
COSS Output Capacitance 611
CGS Gate-Source Capacitance VDS=10V, VGS= -5 V, 1MHz. 972 pF
CGD Gate-Drain Capacitance 493
CDS Drain-Source Capacitance 118

PN Diode
IR Reverse Leakage VR=20V, Vgs = -4V 0.3 mA
VF Forward Voltage IF = 1 A 800 mV
VF Forward Voltage IF = 10 A 900 mV
VF Forward Voltage IF = 20 A 960 mV
Qrr Reverse Recovery Charge Is = 10 A di/dt = 100A/us, 9.5 nC
Trr Reverse Recovery Time Is = 10 A di/dt = 100A/us, 14.6 ns
Notes:
1. Current is limited by bondwire; with an Rthjc = 1.56 oC/W the chip is able to carry 102A.
2. Pulse width <= 500µs, duty cycle < = 2%

2 Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA

Tel. 1 408 654 1980 Fax 1 408 654 1988 [Link]
LD1010DA Product Specification
Typical Operating Characteristics
(TA = +25°C, unless otherwise noted.)

8 1.0

7 0.5
0.0
6
-0.5
RDS(mOhms)

Vgs (Volts)
-1.0

4 -1.5
-2.0
3
-2.5
2 -3.0

1 -3.5
-4.0
0
-4.5
1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
0 5 10 15 20
IG(A) Qg (nC)

Figure 1 – RDSON vs Gate Current at ID – 10A Figure 2 – Gate Charge for VDS = 0.1V

50 Capacitance vs. Vds, Vgs=-5v; DPAK, 25'C

45
2000
40
1800
35 1600
30 1400
ID (mA)

25 1200
C (pF)

20 1000
15
800 Ciss Coss Crss
600
10
400
5
200
0 0
0 5 10 15 20 25 30 0 5 10 15 20 25
V D S (V ) Vds (volts)

Figure 3 – Breakdown Voltage Vds vs Id Figure 4 – Capacitance vs Drain Voltage Vds

0.10 0.50
0.09 0.45
VDS=12V
0.08 0.40
0.07 0.35
0.06 VDS=0.1V
0.30
IG(A)

ID (A)

0.05
0.25
0.04
0.20
0.03
0.02 0.15
0.01 0.10
0.00 0.05
0.00 0.20 0.40 0.60 0.80
0.00
VGS(V) -10 -8 -6 -4 -2 0
VG (V)

Figure 5 – IG vs Gate Voltage VGS Figure 6 – Transfer Characteristic

Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA 3

Tel. 1 408 654 1980 Fax 1 408 654 1988 [Link]
LD1010DA Product Specification
 Typical Operating Characteristics
(TA = +25°C, unless otherwise noted.)
Igs=10mA
1.8 50
Igs=1µA
45
1.7
Vgs=+0.5V
40
1.6
Normalized Rdson

35
Vgs=0V
1.5 30

ID(A)
1.4 25

1.3 20
Vgs=-0.5V
15
1.2
10
1.1
5
Vgs=-1.0V
1.0
0
0 50 100 150 0 1 2 3 4 5
T em p(C ) VDS(V)

Figure 7 – RDSON =f(T); ID = -10A; IG = 50mA Figure 8 – ID vs VDS Characteristics

0
100
-2
10µs
-4
Id, Drain Current (A)

-6 Ig = 40mA
Single Pulse 100µs
ID (Amps)

-8 Tc = 25°C

-10 10
1ms
-12
10ms
-14 Rdson Limit
Thermal Limit DC
-16
Package Limit
-18 1
-20 0.1 1 10 100
-1.00 -0.90 -0.80 -0.70 -0.60 -0.50 Vds, Drain-to-Source Voltage (V)
VDS (Volts)

Figure 9 – PN Diode Voltage vs Current Figure 10 – Safe Operating Area

Total Pow er Dissipation (W) ZthJA = f(tp) (parameter D= tp/T)

1.E+00
100.00 D = 0.5

80.00 0.2
ZthJA (K/W)
Ptot (W)

60.00 0.1
1.E-01 P(pk)
0.05
40.00
tp
0.02 T
20.00
0.01 Note:
1. Duty Factor D = tp/T
0.00 Single Pulse 2. Peak Tj = P(pk)*ZthJA + TA

0 50 100 150 200 1.E-02

1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Te m pe rature (C)
tp (s)

Figure 11 – Total Power Dissipation Figure 12 – Normalized Thermal Response

4 Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA

Tel. 1 408 654 1980 Fax 1 408 654 1988 [Link]
LD1010DA Product Specification
Ordering Information
Product Number PN Marking Package Notes:
LD1010DA LD1010DA TO252 (DPAK) This product is Pb-Free and has Tin Plated leads

Package and Marking Information:

DIMENSIONS
E
E A
mm. inch
DIM. C2
TYP. MIN. MAX. TYP. MIN. MAX. B2
B2
A 2.19 2.40 0.086 0.094

L2
L2
A1 0.89 1.14 0.035 0.045
A2 0.03 0.13 0.001 0.005 LD1010DA
LD1010DA

DPAK
b 0.76 1.14 0.030 0.045 XXXXX

D
D
b1 0.55 0.90 0.022 0.035 XXXX

H
H
B2 5.20 5.46 0.205 0.215 A2

L4
L4
C 0.45 0.60 0.017 0.023

L3
L3
C2 0.45 0.58 0.017 0.023
R
D 5.97 6.22 0.235 0.245 e A1
D1 5.30 0.208 b
b
C
E 6.35 6.73 0.250 0.265 b1
b1
e 2.28 0.090
H 9.35 10.42 0.368 0.410
Back View
L2 0.88 1.27 0.035 0.050
L3 1.86 3.57 0.073 0.140
L4 0.64 1.02 0.025 0.040

D1
R 0.20 0.008
Alternate
D 5.40 5.60 0.213 0.220
L2 1.25 1.75 0.049 0.069
L3 2.60 2.80 0.102 0.110
H 9.65 9.75 0.380 0.384

Life Support Policy

LOVOLTECH’s PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF LOVOLTECH, Inc. As used herein:
1. Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body, or (b) support or
sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling can
be reasonably expected to result in a significant injury of the user.
2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.

Datasheet Identification Product Status Definition

Advance Information In definition or in This datasheet contains the design specifications for product development.
Design Specifications may change without notice.
Preliminary Initial Production This datasheet contains preliminary data; additional and application data will be
published at a later date. Lovoltech, Inc. reserves the right to make changes at any
time without notice in order to improve design.
No Identification Needed In Production This datasheet contains final specifications. Lovoltech reserves the right to make
changes at any time without notice in order to improve the design.

Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA 5

Tel. 1 408 654 1980 Fax 1 408 654 1988 [Link]
LD1010DA Product Specification