Research Article

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ISSN 1998-0124 CN 11-5974/O4

2023, 16(2): 3188−3194 https://doi.org/10.1007/s12274-022-4974-2

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Wenda Ma1,2, Junfeng Lu3,4, Shuaipeng Ge1,2, Li Zhang2, Fengchang Huang2, Naiwei Gao1,2, Peiguang Yan1 ( Ⴃ),
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In spite of the explosive rise of research on memristive switching, more improvements in tunability, versatility, and hetero-
integration are required through the discovery and application of novel materials. Herein, we report resistance switching in nano-
thick two-dimensional (2D) crystals of bismuth selenium (BiSe). The BiSe devices exhibit nonvolatile bipolar resistance switching,
volatile switching, and electrical bistable behavior in different conditions. The different memristive behavior of BiSe devices may
be related to the concentration of Bi ions in this Bi-rich structure, which directly affects the capability of filaments forming.
Furthermore, the external mechanical strain is applied in modulation of multi-layer BiSe devices. The memristive BiSe devices
show a large on/off ratio of ~ 104 and retention time of ~ 104 s. The discovery of memristive switching behavior in multi-layer BiSe
is attributed to the forming of Bi filaments. The resistance switching behavior in multi-layer BiSe demonstrates the potential
application in the flexible memories and functional integrated devices.

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bismuth selenium, heterostructure, resistance switching, memristors, flexible memories, strain engineering
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www.theNanoResearch.com | www.Springer.com/journal/12274 | Nano Research

3190 Nano Res. 2023, 16(2): 3188–3194
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| www.editorialmanager.com/nare/default.asp
Nano Res. 2023, 16(2): 3188–3194 3191

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