TSAL4400

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Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): Ø 3
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 25°
94 8636
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Package matches with detector TEFT4300
DESCRIPTION • Material categorization: for definitions of compliance
TSAL4400 is an infrared, 940 nm emitting diode in GaAlAs, please see www.vishay.com/doc?99912
MQW technology with high radiant power molded in a
blue-gray plastic package. APPLICATIONS
• Infrared remote control units
• Free air transmission systems
• Infrared source for optical counters and card readers

PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns)
TSAL4400 36 ± 25 940 15
Note
• Test conditions see table “Basic Characteristics“

ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TSAL4400 bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1
Note
• MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR 5 V
Forward current IF 100 mA
Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA
Surge forward current tp = 100 μs IFSM 1.5 A
Power dissipation PV 160 mW
Junction temperature Tj 100 °C
Operating temperature range Tamb -40 to +85 °C
Storage temperature range Tstg -40 to +100 °C
Soldering temperature t ≤ 5 s, 2 mm from case Tsd 260 °C
Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 300 K/W

Rev. 1.8, 01-Aug-14 1 Document Number: 81006

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 TSAL4400
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Vishay Semiconductors

180 120

160
PV - Power Dissipation (mW)

100

IF - Forward Current (mA)

140

120 80
RthJA = 300 K/W
100
60
80 RthJA = 300 K/W

60 40

40
20
20

0 0
0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 100
21317 Tamb - Ambient Temperature (°C) 21318 Tamb - Ambient Temperature (°C)

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
IF = 100 mA, tp = 20 ms VF 1.35 1.6 V
Forward voltage
IF = 1 A, tp = 100 μs VF 2.6 3 V
Temperature coefficient of VF IF = 1 mA TKVF -1.8 mV/K
Reverse current VR = 5 V IR 10 μA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj 60 pF
IF = 100 mA, tp = 20 ms Ie 16 36 80 mW/sr
Radiant intensity
IF = 1 A, tp = 100 μs Ie 135 290 mW/sr
Radiant power IF = 100 mA, tp = 20 ms φe 40 mW
Temperature coefficient of φe IF = 20 mA TKφe -0.6 %/K
Angle of half intensity ϕ ± 25 deg
Peak wavelength IF = 100 mA λp 940 nm
Spectral bandwidth IF = 100 mA Δλ 25 nm
Temperature coefficient of λp IF = 100 mA TKλp 0.25 nm/K
Rise time IF = 100 mA tr 15 ns
Fall time IF = 100 mA tf 15 ns

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

10 1 104
I F - Forward Current (A)

IF - Forward Current (mA)

IFSM = 1 A (Single Pulse) 103

t p/T = 0.01
10 0 0.05 102
tP = 100 µs
0.1
tP/T = 0.001
0.5 101

1.0
10 -1 100
10 -2 10 -1 10 0 10 1 10 2 0 1 2 3 4
96 11987 t p - Pulse Duration (ms) 13600 VF - Forward Voltage (V)

Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 4 - Forward Current vs. Forward Voltage

Rev. 1.8, 01-Aug-14 2 Document Number: 81006

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 TSAL4400
www.vishay.com
Vishay Semiconductors

1000 100

Φe rel - Relative Radiant Power (%)

tp = 100 μs
Ie - Radiant Intensity (mW/sr)

90
80 IF = 30 mA
100
70
60
10 50
40
30
1
20
10
0.1 0
1 10 100 1000 840 880 920 960 1000 1040

IF - Forward Current (mA) 21445 λ - Wavelength (nm)

Fig. 5 - Radiant Intensity vs. Forward Current Fig. 8 - Relative Radiant Power vs. Wavelength

0° 10° 20°
1000 30°

I e rel - Relative Radiant Intensity

ϕ - Angular Displacement
Φ e - Radiant Power (mW)

100
40°
1.0
10 0.9 50°

0.8 60°
1
70°
0.7
80°
0.1
10 0 10 1 10 2 10 3 10 4 0.6 0.4 0.2 0
13602 I F - Forward Current (mA) 14328

Fig. 6 - Radiant Power vs. Forward Current Fig. 9 - Relative Radiant Intensity vs. Angular Displacement

1.6

1.2
IF = 20 mA
Ie rel; Φe rel

0.8

0.4

0
-10 0 10 50 100 140
94 7993 T amb - Ambient Temperature (°C)

Fig. 7 - Rel. Radiant Intensity/Power vs. Ambient Temperature

Rev. 1.8, 01-Aug-14 3 Document Number: 81006

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 TSAL4400
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters

A C

Ø 3.2 ± 0.15
R1.4 (sphere)
3.4 ± 0.15
4.4 ± 0.3

(2.5)

< 0.6

AREA NOT PLANE

34.4 ± 0.5

5.8 ± 0.3

Ø 2.9 ± 0.15

+ 0.15
+ 0.2 0.4 - 0.05
1.5 ± 0.5

0.5 - 0.1 technical drawings

according to DIN
specifications
2.54 nom.

Drawing-No.: 6.544-5255.01-4
Issue: 9; 28.07.14

Rev. 1.8, 01-Aug-14 4 Document Number: 81006

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12 1 Document Number: 91000