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CSD Project

This progress report details the simulation of a MESFET device using GaN, conducted as part of a Bachelor of Technology coursework. The report outlines the device parameters, models, and simulation setup, including the use of Silvaco ATLAS for accurate modeling of GaN device physics. Key specifications include a 0.5 µm gate length and a breakdown field of 3.3 MV/cm.

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25 views3 pages

CSD Project

This progress report details the simulation of a MESFET device using GaN, conducted as part of a Bachelor of Technology coursework. The report outlines the device parameters, models, and simulation setup, including the use of Silvaco ATLAS for accurate modeling of GaN device physics. Key specifications include a 0.5 µm gate length and a breakdown field of 3.3 MV/cm.

Uploaded by

jasimjasu3672
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Compound Semiconductor Devices

Progress Report

MESFET using GaN

Submitted as a part of the coursework for the Compound Semiconductor Devices

Bachelor of Technology
in
Electronics and Communication Engineering

Submitted by

Roll No Names of Students

B220402EC Mohammed Razeen R


B220412EC Muhammed Jasim M
B220644EC Adithyadev S S
B221089EC P Pavithran
B221325EC Nadheem Roshan

Under the guidance of


Dr Arjunan M S

Department of Electronics and Communication Engineering


National Institute of Technology Calicut
Calicut, Kerala, India – 673 601
Winter Semester 2025
EDA Tool Used
Silvaco ATLAS was chosen for its accurate modeling of GaN device physics, including trapping effects
and high-field behavior. Its industry-standard reliability, precise parameter control, and integrated
visualization tools make it ideal for our MESFET simulation.

Device Dimensions

Table 1: MESFET Parameters and Descriptions


Parameter Value Description
Substrate Sapphire Semi-insulating substrate
Channel Material GaN (n-doped) Doping: 1 × 1017 cm−3 (Silicon)
Gate Metal Gold (Au) Schottky contact (Work function: 5.1 eV)
Source/Drain n+ GaN Doping: 5 × 1020 cm−3 (Ohmic contacts)
Gate Length (Lg) 0.5 µm Schottky gate length
Channel Thickness 0.2 µm Doped GaN layer
Breakdown Field 3.3 MV/cm GaN critical field

1 Models and Parameters Used in the Simulation


The following models, doping profiles, and meshing configurations were used in the GaN MESFET
simulation:

Doping Profiles
• Ohmic Doping:
– Source/Drain: Silicon (Si) active concentration of 5 × 1020 cm−3 (n+ GaN).
• Constant Doping:

– GaN Channel: Uniform 1 × 1017 cm−3 (Si).


– Sapphire Substrate: Intrinsic (undoped).

Material Models
• Mobility:
– Field-Dependent Mobility (albrct.n) for GaN.
• Trapping:
– SRH (Shockley-Read-Hall) Recombination with:
∗ Electron lifetime (τn ) = 1 × 10−7 s.
∗ Hole lifetime (τp ) = 1 × 10−7 s.

• Contacts:
– Gate: Schottky contact (Au, work function = 5.1 eV).
– Source/Drain: Ohmic contacts (work function = 4.1 eV).

Page 1
Meshing Refinements
• GaN Channel:
– x-direction: 0.05 µm near gate, 0.25 µm elsewhere.
– y-direction: 0.001 µm refinement at interfaces.

• Substrate (Sapphire):
– Coarse mesh: 0.1 µm refinement.

Simulation Setup
• Voltage Sweeps:
– Drain voltage (Vd ): 0 → 20 V (step = 0.1 V).
– Gate voltage (Vg ): 0 → -5 V (step = -0.5 V).

Experimental Results

Figure 1: Structure of GaN MESFET

Page 2

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