Tunnel Diode - Quick Notes
1. Working Principle:
A tunnel diode is a heavily doped p-n junction diode. Due to the heavy doping, the depletion layer
becomes very thin. When a small forward voltage is applied, electrons tunnel through the barrier
instead of crossing it normally. This quantum tunneling allows current to flow even at very low
voltages.
2. V-I Characteristics (Important Terms):
- Peak Point (Vp, Ip): The current increases and reaches a maximum.
- Negative Resistance Region: As voltage increases further, current decreases.
- Valley Point (Vv, Iv): The current reaches a minimum.
- After the valley point, the diode behaves like a normal p-n junction diode.
- This unique region (between peak and valley) is called the negative resistance region.
3. Applications:
- Used in high-speed switching circuits
- Used in microwave oscillators
- Used in amplifiers
- Used in memory and logic circuits