Si7404DN

Vishay Siliconix

N-Channel 30 V (D-S) Fast Switching MOSFET

PRODUCT SUMMARY FEATURES

VDS (V) RDS(on) () ID (A) • Halogen-free According to IEC 61249-2-21
Available
0.013 at VGS = 10 V 13.3
• TrenchFET® Power MOSFET
30 0.015 at VGS = 4.5 V 12.4
• Compliant to RoHS Directive 2002/95/EC
0.022 at VGS = 2.5 V 10.2
APPLICATIONS
PowerPAK® 1212-8
• Li-lon Battery Protection

3.30 mm S
3.30 mm
1
S D
2
S
3
G
4
D
8
D
7
D
G
6
D
5

Bottom View
S
Ordering Information: Si7404DN-T1-E3 (Lead (Pb)-free)
Si7404DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS ± 12
TA = 25 °C 13.3 8.5
Continuous Drain Current (TJ = 150 °C)a ID
TA = 70 °C 10.6 6.8
A
Pulsed Drain Current IDM 40
Single Avalanche Current IAS 15
0.1 mH
Single Avalanche Energy (Duty Cycle 1 %) EAS 11 mJ
Continuous Source Current (Diode Conduction)a IS 3.2 1.3 A
TA = 25 °C 3.8 1.5
Maximum Power Dissipationa PD W
TA = 70 °C 2.0 0.8
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150
°C
Soldering Recommendationsb,c 260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
t 10 s 26 33
Maximum Junction-to-Ambienta RthJA
Steady State 65 81 °C/W
Maximum Junction-to-Case (Drain) Steady State
RthJC 1.9 2.4
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile ([Link]/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed cop-
per (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 71658 [Link]

S11-2045-Rev. G, 17-Oct-11 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000
Si7404DN
Vishay Siliconix

MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.6 1.5 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA
VDS = 30 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS µA
VDS = 30 V, VGS = 0 V, TJ = 55 °C 5
On-State Drain Currenta ID(on) VDS  5 V, VGS = 10 V 40 A
VGS = 10 V, ID = 13.3 A 0.010 0.013
Drain-Source On-State Resistance a RDS(on) VGS = 4.5 V, ID =12.4 A 0.0125 0.015 
VGS = 2.5 V, ID = 5 A 0.019 0.022
Forward Transconductancea gfs VDS = 5 V, ID = 13.3 A 50 S
a VSD IS = 3.2 A, VGS = 0 V 0.75 1.2 V
Diode Forward Voltage
Dynamicb
Total Gate Charge Qg 20 30
Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 13.3 A 5.8 nC
Gate-Drain Charge Qgd 7.1
Turn-On Delay Time td(on) 27 40
Rise Time tr VDD = 15 V, RL = 15  39 60
Turn-Off DelayTime td(off) ID  1 A, VGEN = 4.5 V, RG = 6  64 100
ns
Fall Time tf 33 50
Source-Drain Reverse Recovery
trr IF = 3.2 A, dI/dt = 100 A/µs 45 90
Time
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

40 40
VGS = 10 thru 3 V
35 35
2.5 V
30 30
ID - Drain Current (A)

ID - Drain Current (A)

25 25

20 20

15 15
TC = 125 °C
10 10
2V

5 5 25 °C
1, 1.5 V - 55 °C
0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

[Link] Document Number: 71658

2 S11-2045-Rev. G, 17-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000
 Si7404DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
0.05 3000

2500
0.04
RDS(on) - On-Resistance (Ω)

C - Capacitance (pF)
2000
Ciss
0.03
VGS = 2.5 V
1500

0.02
VGS = 4.5 V 1000

0.01
500
VGS = 10 V Coss

Crss
0.00 0
0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

10 1.8

VDS = 15 V
VGS = 10 V
ID = 13.3 A 1.6
VGS - Gate-to-Source Voltage (V)

8 ID = 13.3 A
R DS(on) - On-Resistance

1.4
(Normalized)

1.2

4
1.0

2
0.8

0 0.6
0 10 20 30 40 50 - 50 - 25 0 25 50 75 100 125 150

Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)

Gate Charge On-Resistance vs. Junction Temperature

50 0.05

ID = 13.3 A
0.04
R DS(on) - On-Resistance (Ω)
IS - Source Current (A)

TJ = 150 °C ID = 5 A

10 0.03

0.02

TJ = 25 °C
0.01

1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage

Document Number: 71658 [Link]

S11-2045-Rev. G, 17-Oct-11 3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000
Si7404DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

0.30 50

ID = 2 mA
0.15
40
V GS(th) Variance (V)

0.00
30

Power (W)
- 0.15

20
- 0.30

10
- 0.45

- 0.60 0
- 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power, Junction-to-Ambient

100
Limited by R DS(on)*
100 μs

10
I D - Drain Current (A)

1 ms

10 ms
1
100 ms
TA = 25 °C 1s
Single Pulse 10 s
0.1
DC
BVDSS Limited

0.01
0.1 1 10 100
V DS - Drain-to-Source Voltage (V)
* V GS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient

[Link] Document Number: 71658

4 S11-2045-Rev. G, 17-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000
 Si7404DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = R thJA = 65 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2

0.1

0.1 Single Pulse

0.05
0.02

0.01
10-4 10-3 10-2 10-1 1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see [Link]/ppg?71658.

Document Number: 71658 [Link]

S11-2045-Rev. G, 17-Oct-11 5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000
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[Link]
Vishay
Disclaimer

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Revision: 08-Feb-17 1 Document Number: 91000

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