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Module 5

The document provides solutions for various problems related to JFET and MOSFET circuits, including calculations for operating point current and voltage values, transconductance, source resistance, drain current, and voltage gain. It includes step-by-step derivations and formulas used to arrive at the results for each scenario. Key values such as supply voltage, maximum drain current, and specific device parameters are utilized in the calculations.

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0% found this document useful (0 votes)
131 views3 pages

Module 5

The document provides solutions for various problems related to JFET and MOSFET circuits, including calculations for operating point current and voltage values, transconductance, source resistance, drain current, and voltage gain. It includes step-by-step derivations and formulas used to arrive at the results for each scenario. Key values such as supply voltage, maximum drain current, and specific device parameters are utilized in the calculations.

Uploaded by

chaharsahil1408
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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5.

4 Find out the operating point current and voltage values (IDQ and VDSQ) for a self
biased JFET having the supply voltage VDD = 20V and maximum value of drain current
5.3 The reverse gate voltage of JFET when changes from 4.4V to 4.2V, the drain as 12 mA.
current changes from 2.2 mA to 2.6 mA. Find out the value of transconductance of the
transistor. Solution:-
Solution:- We know that the value of drain current at Q-point may be taken as half of the maximum
current, that is,
The transconductance, gm is defined as
I DSS 12mA
ID I DQ 6.0 mA
gm 2 2
VGS
In the same way, the value of drain-source voltage at Q-point may be taken as half of
Where ΔID is change in drain current when change in gate-source voltage is ΔVGS. supply voltage VDD. That is,
In the given problem, VDD 20V
VDSQ
2 2
ΔID = (2.6 – 2.2) mA
or , VDSQ 10V
= 0.4 mA
Therefore,
And,
IDQ = 6.0 mA
ΔVGS = (4.4 – 4.2) V
VDSQ = 10.0 V
= 0.2 V

Therefore,

0.4 mA
gm
0.2V
or , g m 2.0 m mhos.

5.5 Calculate the value of source resistance RS required to self bias a n-JFET such that
VGSQ = - 3V. The n-JFET has maximum drain-source current IDSS = 12 mA, and pinch- 5.6 For the DMOSFET circuit shown in fig., the device parameters are:

off voltage, Vp = - 6V VGS(off) = -8V, IDSS = 10mA

Solution:- Determine drain-to- source voltage VDS.

The drain current, ID, in a JFET, in the saturation region is,


2
VGS
ID I DSS 1
Vp
VDD = + 18V
We have, IDSS = 12 mA, VGS = -3V and Vp = -6V, Therefore,

ID 12mA 1
3
2
ID
6
RD
or , I D 9.0 mA 680Ω
Since the voltage VGS is generated across the source resistor RS, we have,

RS
VGS 3V
 333
+
ID 9 mA VDS
RS  333
-
RG 10M
Solution:- 5.7 Data sheet of an EMOSFET specifies following parameters:

In a MOSFET, there is no gate current. Therefore, there is no voltage drop across ID(on) = 50 mA at VGS = 6V and VT, the threshold voltage for EMOSFET, 2V.
resistor RG . Determine the drain current at VGS = 3V.
Thus, VGS = 0.
Solution:-
Further, when VGS =0, ID = IDSS, the maximum drain current.
We first determine the conductance parameter k for the device using the relation,
Summing up voltages in the output loop and using ID = IDSS,
I D (ON )
k
We have, VGS VT
2

IDSS .RD + VDS = VDD 50 mA


(6 2) 2
or VDS = VDD – IDSS . RD
or , k 3.12 mA
v2
= 18 – 10 X 10-3 X 0.68 X 103
Now, the drain current, ID is expressed as,
= 18 – 6.8
2
or VDS = 11.2 V ID k VGS VT
3.12 10 (3 2) 2 3

or , I D 3.12 mA

5.8 The drain current changes from 5 mA to 7 mA when the gate voltage is changed
from – 4.0V to – 3.7V in the amplifier circuit shown in fig.

Calculate the voltage gain of the amplifier.


Solution:-
In case, the source resistance RS is ac grounded as done in the circuit of fig. the gain of
amplifier is,

AV = gm.rD

Where gm is transconductance of the transistor and rD is effective ac resistance seen by


+15V the drain terminal.

Now,

ID
gm
6k RD VGS VDS

vo 2 mA
0.3V
vi or , g m 6.66 mS

And,

rD = RD RL = 6k 6k = 3kΩ
RL 6k Therefore,
RS AV = gm X rD = 6.66 X 10-3 X 3 X 103
400Ω or, AV = 20
5.9 Find the drain-source voltage, VDS, for the NMOS transistor circuit shown in fig. The Solution:-
device parameters are: conductance parameter, k = 600μA/v2 and VT = 2V.
The gate current, IG, is zero in a MOSFET. Then, from voltage divider network,

R2
VGS VDD
R1 R2
2M
+15V 4M 2M
15V

or , VGS 5V

And, as we know
RD 2k 2

4M R1 ID k VGS VT
600 10 6 (5 2) 2
+ 5.4 mA

VDS or , I D 5.4 mA

Applying voltage summation in the output loop,


- VDD = IDRD + VDS

2M R2 or, VDS = VDD – IDRD = 15 – (5.4 X 10-3 X 2 X 103)

k or, VDS = 4.2V

5.10 Calculate the voltage gain in the amplifier shown in fig. The transconductance of Solution:-
the transistor is 4000μs. If the 400Ω source resistance is by passed by an capacitor,
how much is voltage gain now? When the source resistance RS is not by passed, the voltage gain is,

g m rD
AV ...........( A)
1 g m rs

+20V Where rD and rS are effective (ac) resistance seen by the drain and source of the
transistor.

And,

rD = RD RL
RD 6k
vo = 6k 10 k = 3.75 kΩ

And,
vi rS = RS = 400Ω

Therefore

4000 10 6 3.75 103


RG RL 10k AV
1 4000 10 6 400
4 3.75
5M 400Ω RS 2.6
5.7

AV 5.7
k In case, RS is bypassed, the gain (rS = 0 in the Eq(A)),

AV = gm rD = 4000 X 10-6 X 3.75 X 103

or, AV = 15

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