SQM120P04-04L

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Vishay Siliconix
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 
VDS (V) - 40
61249-2-21 Definition
RDS(on) () at VGS = - 10 V 0.0040
• TrenchFET® Power MOSFET
RDS(on) () at VGS = - 4.5 V 0.0060
• Package with Low Thermal Resistance
ID (A) - 120
• AEC-Q101 Qualifiedd
Configuration Single
• 100 % Rg and UIS Tested
TO-263 S • Compliant to RoHS Directive 2002/95/EC

G D S
Top View
D
P-Channel MOSFET

ORDERING INFORMATION
Package TO-263
Lead (Pb)-free and Halogen-free SQM120P04-04L-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS - 40
V
Gate-Source Voltage VGS ± 20
TC = 25 °C - 120
Continuous Drain Currenta ID
TC = 125 °C - 120
Continuous Source Current (Diode Conduction)a IS - 120 A
Pulsed Drain Currentb IDM - 330
Single Pulse Avalanche Current IAS - 80
L = 0.1 mH
Single Pulse Avalanche Energy EAS 320 mJ
TC = 25 °C 375
Maximum Power Dissipationb PD W
TC = 125 °C 125
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mountc RthJA 40
°C/W
Junction-to-Case (Drain) RthJC 0.40
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.

S20-0526-Rev. C, 06-Jul-2020 1 Document Number: 67047

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0, ID = - 250 μA - 40 - -
V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 μA - 1.5 - 2.0 - 2.5
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA
VGS = 0 V VDS = - 40 V - - - 1.0
Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = - 40 V, TJ = 125 °C - - - 50 μA
VGS = 0 V VDS = - 40 V, TJ = 175 °C - - - 250
On-State Drain Currenta ID(on) VGS = - 10 V VDS- 5 V - 120 - - A
VGS = - 10 V ID = - 30 A - 0.0034 0.0040
VGS = - 10 V ID = - 30 A, TJ = 125 °C - - 0.0059
Drain-Source On-State Resistancea RDS(on) 
VGS = - 10 V ID = - 30 A, TJ = 175 °C - - 0.0070
VGS = - 4.5 V ID = - 20 A - 0.0050 0.0060
Forward Transconductanceb gfs VDS = - 15 V, ID = - 30 A - 97 - S
Dynamicb
Input Capacitance Ciss - 11 183 13 980
Output Capacitance Coss VGS = 0 V VDS = - 20 V, f = 1 MHz - 1614 2020 pF
Reverse Transfer Capacitance Crss - 1294 1620
Total Gate Chargec Qg - 220 330
Gate-Source Chargec Qgs VGS = - 10 V VDS = - 20 V, ID = - 110 A - 34 - nC
Gate-Drain Chargec Qgd - 56 -
Gate Resistance Rg f = 1 MHz 1.2 2.5 3.7 
Turn-On Delay Timec td(on) - 17 26
Rise Timec tr VDD = - 20 V, RL = 0.18  - 15 23
ns
Turn-Off Delay Timec td(off) ID  - 110 A, VGEN = - 10 V, Rg = 1  - 112 168
Fall Timec tf - 45 68
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta ISM - - - 330 A
Forward Voltage VSD IF = - 100 A, VGS = 0 - - 0.95 - 1.5 V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.





Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.


S20-0526-Rev. C, 06-Jul-2020 2 Document Number: 67047

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

240 150

V GS = 10 V thru 5 V
200
120
ID - Drain Current (A)

ID - Drain Current (A)

160
90
V GS = 4 V
120

60
80
T C = 25 °C
30
40 T C = 125 °C
V GS = 3 V
T C = - 55 °C
0 0
0 3 6 9 12 15 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

200 0.015

160 RDS(on) - On-Resistance (Ω) 0.012

g fs - Transconductance (S)

T C = - 55 °C
120 0.009

T C = 25 °C

80 0.006 V GS = 4.5 V

T C = 125 °C V GS = 10 V
40 0.003

0 0
0 16 32 48 64 80 0 20 40 60 80 100
ID - Drain Current (A) ID - Drain Current (A)

Transconductance On-Resistance vs. Drain Current

15 000 10

ID = 110 A
12 500 Ciss
VGS - Gate-to-Source Voltage (V)

8
V DS = 20 V
C - Capacitance (pF)

10 000
6

7500

4
5000
Coss
2
2500
Crss

0 0
0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 175 200 225
VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)

Capacitance Gate Charge

S20-0526-Rev. C, 06-Jul-2020 3 Document Number: 67047

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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.0 100
ID = 30 A
RDS(on) - On-Resistance (Normalized)

1.7 10
V GS = 10 V

IS - Source Current (A)

T J = 150 °C
1.4 1
T J = 25 °C

1.1 0.1

0.8 0.01

0.5 0.001
- 50 - 25 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0 1.2
TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage

0.05 1.2

0.9
0.04
ID = 250 μA
RDS(on) - On-Resistance (Ω)

VGS(th) Variance (V)

0.6
0.03 ID = 5 mA
0.3

0.02
0

0.01 T J = 150 °C
- 0.3

T J = 25 °C
0 - 0.6
0 2 4 6 8 10 - 50 - 25 0 25 50 75 100 125 150 175
VGS - Gate-to-Source Voltage (V) TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage Threshold Voltage

- 42
ID = 10 mA
- 44
VDS - Drain-to-Source Voltage (V)

- 46

- 48

- 50

- 52

- 54
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature

S20-0526-Rev. C, 06-Jul-2020 4 Document Number: 67047

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000

100
100 μs
IDM Limited

ID - Drain Current (A)

10 1 ms
ID Limited
10ms, 100ms,
1s, 10s, DC
1
Limited by RDS(on)*

0.1
BVDSS Limited

TC = 25 °C
0.01 Single Pulse
0.01 0.1 1 10 100

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area

1
Normalized Effective Transient

0.1
Thermal Impedance

0.01

0.001

0.0001
10-4 10-3 10-2 10-1 1 10 100 1000

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

S20-0526-Rev. C, 06-Jul-2020 5 Document Number: 67047

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THERMAL RATINGS (TA = 25 °C, unless otherwise noted)

1 Duty Cycle = 0.5

Normalized Effective Transient

0.2
Thermal Impedance

0.1
0.1
0.05
0.02
Single Pulse

0.01
10- 4 10- 3 10- 2 10- 1 1

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67047.

S20-0526-Rev. C, 06-Jul-2020 6 Document Number: 67047

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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 Package Information
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Vishay Siliconix
TO-263 (D2PAK): 3-LEAD
VERSION 1: FACILITY CODE = T
-B-
A
E c2
6

D3
L2
E1

D2
-A- K

D4
E3

D1
D
L
L3

A A
b2 c
e b Detail “A” E2

0.010 M A M
2 PL

INCHES MILLIMETERS
°
-5

L4

DIM. MIN. MAX. MIN. MAX.

0°

A 0.160 0.190 4.064 4.826

L1 b 0.020 0.039 0.508 0.990
b1 0.020 0.035 0.508 0.889
DETAIL A (ROTATED 90°) b2 0.045 0.055 1.143 1.397
Thin lead 0.013 0.018 0.330 0.457
c*
Thick lead 0.023 0.028 0.584 0.711
b Thin lead 0.013 0.017 0.330 0.431
b1 c1
Thick lead 0.023 0.027 0.584 0.685
M

c1

c2 0.045 0.055 1.143 1.397

c

D 0.340 0.380 8.636 9.652

SECTION A-A
D1 0.220 0.240 5.588 6.096
D2 0.038 0.042 0.965 1.067
D3 0.045 0.055 1.143 1.397
D4 0.044 0.052 1.118 1.321
E 0.380 0.410 9.652 10.414
E1 0.245 - 6.223 -
E2 0.355 0.375 9.017 9.525
E3 0.072 0.078 1.829 1.981
e 0.100 BSC 2.54 BSC
Notes K 0.045 0.055 1.143 1.397
1. Plane B includes maximum features of heat sink tab and plastic. L 0.575 0.625 14.605 15.875
2. No more than 25 % of L1 can fall above seating plane by L1 0.090 0.110 2.286 2.794
max. 8 mils.
L2 0.040 0.055 1.016 1.397
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB. L3 0.050 0.070 1.270 1.778
Thick lead is for SUM, SYM, SQM. L4 0.010 BSC 0.254 BSC
5. Use inches as the primary measurement. M - 0.002 - 0.050
6. This feature is for thick lead.

Revison: 28-Oct-2024 1 Document Number: 71198

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Package Information
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Vishay Siliconix
VERSION 2: FACILITY CODE = N

E A E

c2 E1

Gauge
L1

8°
plane

0°~
D1

A1
L3
L
D

L4
H

Plating b1, b3
Base metal

(c)
L2

c1
2x b2 c (b, b2)
J1
e 2x b
SECTION G - G and T - T
0.25 A B

OPTION 1 OPTION 2
2 leads 3 leads

DIM. MIN. MAX.

A 4.36 4.56
A1 0 0.25
b 0.70 0.90
b1 0.51 0.89
b2 1.20 1.46
b3 1.17 1.37
c 0.38 0.694
c1 0.38 0.534
c2 1.19 1.34
D 8.60 9.00
D1 6.9 7.5
E 10.15 10.55
E1 8.1 8.7
e 2.54 BSC
H 15.0 15.6
L 1.9 2.5
L1 - 1.65
L2 - 1.78
L3 0.25 typ.
L4 4.78 5.28
J1 2.56 2.96
ECN: S24-1080-Rev. L, 28-Oct-2024
DWG: 5843

Revison: 28-Oct-2024 2 Document Number: 71198

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 AN826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead

0.420
(10.668)

(9.017)
0.355
(16.129)
0.635

0.145
(3.683)

0.135
(3.429)

0.200 0.050
(5.080) (1.257)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index

Document Number: 73397 www.vishay.com

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Revision: 01-Jan-2025 1 Document Number: 91000

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