IRF140
MECHANICAL DATA
Dimensions in mm (inches)
N–CHANNEL
39.95 (1.573)
max.
POWER MOSFET
30.40 (1.197)
30.15 (1.187)
17.15 (0.675)
16.64 (0.655)
VDSS 100V
ID(cont) 28A
4.09 (0.161)
3.84 (0.151)
dia.
2
RDS(on) Ω
0.077Ω
26.67 (1.050)
11.18 (0.440)
10.67 (0.420)
2 plcs.
max.
1 FEATURES
• HERMETICALLY SEALED TO–3 METAL
PACKAGE
20.32 (0.800)
18.80 (0.740)
dia.
• SIMPLE DRIVE REQUIREMENTS
7.87 (0.310)
6.99 (0.275)
• SCREENING OPTIONS AVAILABLE
1.78 (0.070)
1.52 (0.060)
12.07 (0.475)
11.30 (0.445)
1.09 (0.043)
0.97 (0.038)
dia.
2 plcs.
TO–3 Metal Package
Pin 1 – Gate Pin 2 – Source Case – Drain
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS Gate – Source Voltage ±20V
ID Continuous Drain Current (VGS = 0 , Tcase = 25°C) 28A
ID Continuous Drain Current (VGS = 0 , Tcase = 100°C) 20A
IDM Pulsed Drain Current 1 112A
PD Power Dissipation @ Tcase = 25°C 125W
Linear Derating Factor 1W/°C
EAS Single Pulse Avalanche Energy 2 250mJ
IAR Avalanche Current 2 28A
EAR Repetitive Avalanche Energy 2 12.5mJ
dv/dt Peak Diode Recovery 3 5.5V/ns
TJ , Tstg Operating and Storage Temperature Range -55 to +150°C
TL Lead Temperature 1.6mm (0.63”) from case for 10 sec. 300°C
Notes
1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2%
2) @ VDD = 25V , L ≥ 480µH , RG = 25Ω , Peak IL = 28A , Starting TJ = 25°C
3) @ ISD ≤ 28A , di/dt ≤ 170A/µs , VDD ≤ BVDSS , TJ ≤ 150°C , Suggested RG = 9.1Ω
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 9/96
IRF140
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter Test Conditions Min. Typ. Max. Unit
STATIC ELECTRICAL RATINGS
BVDSS Drain – Source Breakdown Voltage VGS = 0 ID = 1mA 100 V
∆BVDSS Temperature Coefficient of Reference to 25°C
0.13 V / °C
∆TJ Breakdown Voltage ID = 1mA
Static Drain – Source On–State VGS = 10V ID = 20A 0.077
RDS(on) Ω
Resistance 1 VGS = 10V ID = 28A 0.089
VGS(th) Gate Threshold Voltage VDS = VGS ID = 250mA 2 4 V
gfs Forward Transconductance 1 VDS ≥ 15V IDS = 20A 9.1 S (É)
VGS = 0 VDS = 0.8BVDSS 25
IDSS Zero Gate Voltage Drain Current µA
TJ = 125°C 250
IGSS Forward Gate – Source Leakage VGS = 20V 100
nA
IGSS Reverse Gate – Source Leakage VGS = –20V –100
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VGS = 0 1660
Coss Output Capacitance VDS = 25V 550 pF
Crss Reverse Transfer Capacitance f = 1MHz 120
Qg Total Gate Charge VGS = 10V 30 59
Qgs Gate – Source Charge ID = 28A 2.4 12 nC
Qgd Gate – Drain (“Miller”) Charge VDS = 0.5BVDSS 12 30.7
td(on) Turn–On Delay Time 21
VDD = 50V
tr Rise Time 145
ID = 28A ns
td(off) Turn–Off Delay Time 21
RG = 9.1Ω
tf Fall Time 105
SOURCE – DRAIN DIODE CHARACTERISTICS
IS Continuous Source Current 28
A
ISM Pulse Source Current 2 112
IS = 28A TJ = 25°C
VSD Diode Forward Voltage 1 1.5 V
VGS = 0
trr Reverse Recovery Time IF = 28A TJ = 25°C 400 ns
Qrr Reverse Recovery Charge 1 di / dt ≤ 100A/µs VDD ≤ 50V 2.9 µC
ton Forward Turn–On Time Negligible
PACKAGE CHARACTERISTICS
LD Internal Drain Inductance (measured from 6mm down drain lead to centre of die) 5.0
nH
LS Internal Source Inductance (from 6mm down source lead to source bond pad) 13
THERMAL CHARACTERISTICS
RθJC Thermal Resistance Junction – Case 1.67
RθCS Thermal Resistance Case – Sink 0.12 °C/W
RθJA Thermal Resistance Junction – Ambient 30
Notes
1) Pulse Test: Pulse Width ≤ 300ms, δ ≤ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 9/96
